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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD30N03S2L20ATMA1

Name: IPD30N03S2L20ATMA1
Brand: Infineon Technologies
SKU: IPD30N03S2L20ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD30N03S2L20ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N03S2L20ATMA1.pdf

Description:: MOSFET N-CH 30V 30A TO252-31

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Product details

Overview

IPD30N03S2L20ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It features a 30 V drain-source breakdown voltage, 20 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 18 A, 30 A continuous drain current at T_C = 25 °C, AEC-Q101 qualification, and PG-TO252-3-11 surface-mount package. It is used in 12 V automotive load switching, DC-DC converter high-side switches, and motor control H-bridge legs.

For engineers reviewing the IPD30N03S2L20ATMA1 datasheet, IPD30N03S2L20ATMA1 pinout, IPD30N03S2L20ATMA1 application, or IPD30N03S2L20ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (70 mJ), thermal resistance (R_thJC = 2.5 K/W), diode forward voltage (V_SD = 0.9–1.3 V), and AEC-Q101 compliance for automotive deployment.

Technical Context

This OptiMOS® device employs trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers and low-voltage gate drivers without level-shifting circuitry.

The integrated body diode supports synchronous rectification and freewheeling in buck converters and half-bridge topologies. Avalanche ruggedness (E_AS = 70 mJ at I_D = 30 A) and 100% single-pulse avalanche testing ensure robustness under inductive switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V automotive systems with margin against transients up to ISO 7637-2 Pulse 5a.
R_DS(on) max	20 mΩ @ V_GS = 10 V, I_D = 18 A - Enables <1 W conduction loss at 30 A in thermally optimized layouts.
I_D cont	30 A @ T_C = 25 °C - Rated for high-current loads such as solenoid drivers and fan controllers.
E_AS	70 mJ - Withstands inductive energy dump in motor commutation without failure.
V_GS(th)	1.2–2.0 V - Ensures turn-on with standard 3.3 V or 5 V logic outputs.
Q_g	14–19 nC - Balances switching speed and gate driver power requirements in 100–500 kHz SMPS designs.
T_j max	+175 °C - Allows operation in engine bay environments without derating below 150 °C ambient.

Pinout & Package

IPD30N03S2L20ATMA1 uses the PG-TO252-3-11 (DPAK) thermally enhanced surface-mount package with exposed drain pad for low thermal resistance (R_thJC = 2.5 K/W). The three terminals are arranged in standard DPAK orientation: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level voltage to modulate channel conductivity; requires <19 nC total charge for full turn-on.
Pin 2 (Drain)	High-side switch node	Connected to PCB copper pour for thermal dissipation; electrically tied to MOSFET drain and internal die backside.
Pin 3 (Source)	Power return path	Serves as reference for gate drive and current sensing; forms low-inductance loop with gate driver ground.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards.
Logic-level gate drive	Operates fully enhanced with V_GS ≥ 4.5 V, eliminating need for external gate boosters in 3.3 V/5 V MCU systems.
Ultra-low R_DS(on)	20 mΩ max at 10 V drive enables >95% efficiency in 12 V/30 A DC-DC stages with minimal heatsinking.
100% avalanche tested	Each unit passes single-pulse E_AS = 70 mJ test, ensuring reliability in inductive load switching without snubbers.
Green package	Lead-free, halogen-free PG-TO252-3-11 meets RoHS Directive 2011/65/EU and JEDEC MSL1 rating (260 °C peak reflow).

Applications

Automotive Body Control Module (BCM)

Industrial 24 V DC Motor Driver

Use Scenario: Switching of headlights, fog lamps, and HVAC actuators in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: High-side load switch controlling up to 30 A resistive/inductive loads with PWM dimming capability.

Use Value: Low R_DS(on) minimizes power loss and heat generation in confined BCM enclosures; AEC-Q101 ensures 15-year field reliability.

Use Scenario: Half-bridge leg in brushed DC motor controller for conveyor systems and automated valves.

IC Role / Device Role / Timing Role: Synchronous high-side switch enabling regenerative braking and precise speed control via 20 kHz PWM.

Use Value: Fast turn-on delay (5 ns) and low Q_gd reduce switching losses; integrated diode supports freewheeling without external components.

Server PSU OR-ing Circuit

12 V Automotive DC-DC Converter

Use Scenario: Hot-swap redundancy in dual-input 12 V server power supplies using ideal diode configuration.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-V_SD (0.9–1.3 V) MOSFET replacing Schottky diodes in OR-ing FETs.

Use Value: Reduces forward drop by >50% vs. 45 V Schottky, cutting conduction loss and improving system efficiency at 40 A output.

Use Scenario: Synchronous rectifier in buck converter supplying 5 V/10 A to infotainment ECUs from 12 V battery rail.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300 kHz with gate driven by dedicated controller.

Use Value: R_DS(on) = 23.5 mΩ @ 4.5 V enables >94% efficiency at full load; SOA supports 120 A pulsed currents during startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL30DN3LLH6	R_DS(on) = 22 mΩ @ 4.5 V; lower Q_g (12 nC); same PG-TO252 package.	Optimized for higher-frequency switching (>1 MHz) but lower avalanche rating (E_AS = 45 mJ).	Prefer for compact SMPS where gate drive loss dominates; avoid in high-energy inductive loads.
IRL3803PBF	R_DS(on) = 12 mΩ @ 10 V but only 20 V V_DS; no AEC-Q101 qualification; TO-220 package.	Not suitable for automotive transients; larger footprint limits board density in space-constrained modules.	Select only for cost-sensitive industrial 12 V non-automotive applications with strict R_DS(on) requirement.

Compared with STL30DN3LLH6 and IRL3803PBF, IPD30N03S2L20ATMA1 uniquely balances AEC-Q101 compliance, 30 V rating, 70 mJ avalanche robustness, and DPAK thermal performance-making it the preferred choice for automotive-grade high-current switching where reliability and transient immunity are mandatory.

Availability

IPD30N03S2L20ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server power OR-ing circuits, and 12 V DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IPD30N03S2L20ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 30 V logic-level power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12 V–24 V systems where low gate drive voltage and ruggedness are critical.

FAQ

What is the maximum junction temperature and how does it affect derating?

The absolute maximum junction temperature is +175 °C. At T_C = 100 °C, the continuous drain current remains 30 A due to its low R_thJC (2.5 K/W) and robust silicon design. Derating begins above 100 °C case temperature, reaching ~22 A at T_C = 125 °C per the published I_D vs. T_C curve on page 4 of the datasheet.

Is the body diode suitable for continuous freewheeling in H-bridge configurations?

Yes-the integrated body diode is rated for 30 A continuous forward current (I_S) and 120 A pulsed (I_S,pulse). Its V_SD of 0.9–1.3 V at 30 A and t_rr of 15 ns enable efficient freewheeling in motor drive half-bridges without external diodes, provided layout minimizes parasitic inductance.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation, especially in high-di/dt applications. Typical values range from 4.7 Ω to 12.7 Ω depending on switching frequency and driver capability. The datasheet specifies t_d(on), t_r, t_d(off), and t_f measured with R_G = 12.7 Ω, confirming this value as a validated baseline.

How does the 20 mΩ R_DS(on) specification relate to real-world thermal performance?

The 20 mΩ maximum is guaranteed at T_j = 25 °C and V_GS = 10 V. At elevated temperatures, R_DS(on) increases-e.g., ~26 mΩ at T_j = 125 °C (per Fig. 9). System-level thermal design must account for this rise to maintain target conduction loss and junction temperature within limits.

IPD30N03S2L20ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2V @ 23µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N03S2L20ATMA1 FAQ

1.How can I place an order for IPD30N03S2L20ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N03S2L20ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N03S2L20ATMA1 reliable?

The price and inventory of IPD30N03S2L20ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N03S2L20ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD30N03S2L20ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N03S2L20ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N03S2L20ATMA1?

IPD30N03S2L20ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N03S2L20ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N03S2L20ATMA1?

For technical support, including IPD30N03S2L20ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N03S2L20ATMA1 requirements.

6.How does Aetrix verify that IPD30N03S2L20ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD30N03S2L20ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N03S2L20ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD30N03S2L20ATMA1?

All IPD30N03S2L20ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N03S2L20ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N03S2L20ATMA1 part is unused and in its original packaging.

Return procedure for IPD30N03S2L20ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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