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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD30N06S223ATMA1

Name: IPD30N06S223ATMA1
Brand: Infineon Technologies
SKU: IPD30N06S223ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD30N06S223ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N06S223ATMA1.pdf

Description:: MOSFET N-CH 55V 30A TO252-3

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Product details

Overview

IPD30N06S223ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO252-3-11 package, rated for 55 V V_DS, 30 A continuous drain current at T_C = 25 °C, and ultra-low 23 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C, is 100% avalanche tested, and used in high-efficiency DC-DC converters and motor control stages in automotive body electronics.

For engineers reviewing the IPD30N06S223ATMA1 datasheet, IPD30N06S223ATMA1 pinout, IPD30N06S223ATMA1 application, or IPD30N06S223ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V drive, thermal resistance (R_thJC = 1.5 K/W), avalanche energy (E_AS = 150 mJ), diode forward voltage (V_SD = 0.9–1.3 V), and AEC-Q101 qualification status.

Technical Context

This OptiMOS® power transistor uses trench-gate silicon technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The device features a thermally enhanced DPAK (PG-TO252-3-11) package with exposed drain pad for low-junction-to-case thermal resistance (1.5 K/W), and its dynamic parameters-C_iss = 901 pF, C_oss = 283 pF, Q_g = 25–32 nC-support fast switching at frequencies up to several hundred kHz in buck and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 42 V automotive supply rails and transient spikes.
R_DS(on) max	23 mΩ @ V_GS = 10 V, I_D = 21 A - Enables <1 W conduction loss at 30 A, critical for thermal management in compact modules.
I_D cont	30 A @ T_C = 25 °C - Sustains full load current without derating when mounted on ≥6 cm² copper area.
E_AS	150 mJ - Withstands single-pulse inductive energy without failure in motor drive or solenoid control.
T_j max	+175 °C - Supports operation in under-hood environments including engine control units and HVAC actuators.
Q_g	25–32 nC - Determines gate driver power requirement; enables efficient 100–500 kHz switching with moderate gate resistance.
V_SD	0.9–1.3 V @ I_F = 30 A - Low forward drop reduces freewheeling loss in high-current PWM applications.
R_thJC	1.5 K/W - Allows direct thermal coupling to heatsink; junction temperature rise ≈ 45 K at 30 W dissipation.

Pinout & Package

IPD30N06S223ATMA1 is housed in a surface-mount PG-TO252-3-11 (DPAK) package with three terminals: Drain (pins 1 & 2, internally connected), Source (pin 3), and Gate (pin 2 tab). The exposed drain pad provides primary thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1 & 2)	Main current-carrying terminal, tied to high-side switch node	Internally bonded to large copper pad; must be connected to ≥6 cm² PCB copper for rated power dissipation.
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable switching; common return for gate driver ground and shunt resistor.
Gate (Tab/Pin 2)	Control input for channel conduction	Exposed metal tab requires insulated mounting; sensitive to ESD-gate resistor and TVS recommended.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 150 mJ-ensures robustness in inductive load switching.
MSL1 rating	Compatible with standard lead-free reflow profiles up to 260 °C peak, eliminating moisture sensitivity concerns.
Ultra-low R_DS(on)	17.0 mΩ typical at 10 V drive reduces I²R losses by >30% vs. legacy 30 mΩ DPAK MOSFETs at same current.
Integrated body diode	V_SD ≤ 1.3 V and t_rr = 39 ns enable efficient freewheeling in synchronous rectifiers and H-bridges.

Applications

Automotive Body Control Module

12 V DC-DC Buck Converter

Use Scenario: Switching power distribution for lighting, window lifts, and seat controls in BCMs.

IC Role / Device Role / Timing Role: High-side load switch controlling 20–30 A resistive/inductive loads with PWM dimming or soft-start.

Use Value: 23 mΩ R_DS(on) limits power loss to <0.7 W at 30 A, enabling convection-cooled PCB layout without heatsinks.

Use Scenario: Main synchronous rectifier in 12 V → 5 V/3.3 V step-down converter for infotainment systems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300 kHz with 50% duty cycle.

Use Value: 1.3 V V_SD and 39 ns t_rr minimize reverse recovery loss and improve efficiency over Schottky alternatives.

Engine Cooling Fan Driver

Electric Power Steering (EPS) Motor Phase Leg

Use Scenario: Half-bridge phase driver for 12 V brushless cooling fans delivering up to 25 A peak.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter, commutated via PWM with dead-time control.

Use Value: 150 mJ E_AS rating ensures survival during fan stall events and inductive kickback transients.

Use Scenario: High-current phase leg in 12 V EPS motor inverter requiring robust short-circuit tolerance.

IC Role / Device Role / Timing Role: N-channel power switch in 60 kHz PWM-driven H-bridge with active short-circuit protection.

Use Value: 175 °C T_j max and 1.5 K/W R_thJC allow sustained 30 A operation in confined EPS module enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL37N6LF6AG	R_DS(on) = 22 mΩ (typ), V_DS = 60 V, Q_g = 27 nC, same DPAK package	Slightly higher V_DS margin but lower E_AS (120 mJ); no AEC-Q101 documentation publicly available	Prefer for cost-sensitive non-safety-critical 12 V loads where full AEC-Q101 traceability is not mandated.
IRF3710PBF	R_DS(on) = 28 mΩ (max), V_DS = 100 V, Q_g = 123 nC, TO-220 package	Higher R_DS(on) and gate charge increase conduction/switching loss; through-hole mounting limits board density	Only suitable for legacy designs requiring 100 V rating or existing TO-220 footprint; not recommended for new automotive designs.

Compared with STL37N6LF6AG and IRF3710PBF, IPD30N06S223ATMA1 delivers superior thermal performance (1.5 K/W vs. ~2.5 K/W), guaranteed AEC-Q101 compliance, and lower total gate charge-making it optimal for space-constrained, high-reliability 12 V automotive power stages.

Availability

IPD30N06S223ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, engine cooling fan drivers, and electric power steering motor inverters requiring stable component supply across multi-year production cycles.

Supply support for IPD30N06S223ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical systems.

FAQ

Is IPD30N06S223ATMA1 pin-compatible with earlier IPD30N06S2 versions?

Yes-IPD30N06S223ATMA1 uses the identical PG-TO252-3-11 package and pinout as IPD30N06S2-23 and IPD30N06S2-23A. The "ATMA1" suffix denotes tape-and-reel packaging per JEDEC standard; electrical and thermal specs remain unchanged.

What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the device supports 30 A continuous drain current only if R_thJC is maintained at ≤1.5 K/W. Derating begins above 100 °C case temperature; SOA curves on page 4 of the datasheet define voltage-current boundaries for pulse durations from 1 µs to 100 ms.

Does the body diode support synchronous rectification in continuous conduction mode (CCM)?

Yes-the diode's 39 ns reverse recovery time and 48 nC Q_rr enable reliable CCM operation in buck converters up to 300 kHz. However, for best efficiency, gate timing must ensure zero-voltage switching or controlled overlap to minimize cross-conduction loss.

Can this MOSFET be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage range (2.1–4.0 V) and required 10 V gate drive for specified R_DS(on) make direct 3.3 V drive insufficient. A level-shifting gate driver (e.g., TC4427 or IRS2007) is mandatory to achieve full enhancement and avoid linear-mode heating.

IPD30N06S223ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 901 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N06S223ATMA1 FAQ

1.How can I place an order for IPD30N06S223ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N06S223ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N06S223ATMA1 reliable?

The price and inventory of IPD30N06S223ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N06S223ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD30N06S223ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N06S223ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N06S223ATMA1?

IPD30N06S223ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N06S223ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N06S223ATMA1?

For technical support, including IPD30N06S223ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N06S223ATMA1 requirements.

6.How does Aetrix verify that IPD30N06S223ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD30N06S223ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N06S223ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD30N06S223ATMA1?

All IPD30N06S223ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N06S223ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N06S223ATMA1 part is unused and in its original packaging.

Return procedure for IPD30N06S223ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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