Infineon Technologies IPD30N06S2L-13

Overview

IPD30N06S2L-13 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 55 V V_DS, 30 A continuous drain current at T_C = 25 °C, and ultra-low 13 mΩ R_DS(on) at V_GS = 4.5 V. It is AEC-Q101 qualified, operates up to 175 °C, and is fully avalanche tested-designed for high-efficiency DC-DC converters and automotive body control modules.

For engineers reviewing the IPD30N06S2L-13 datasheet, IPD30N06S2L-13 pinout, IPD30N06S2L-13 application, or IPD30N06S2L-13 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V, AEC-Q101 qualification, thermal resistance (R_thJC = 1.1 K/W), and integrated body diode performance (t_rr = 33 ns, Q_rr = 71 nC).

Technical Context

This OptiMOS® device uses trench-based silicon technology optimized for low conduction and switching losses in 12 V automotive and industrial power stages. Its logic-level gate enables direct drive from microcontrollers without level-shifting, while its 100% avalanche-tested ruggedness supports inductive load switching in motor drivers and solenoid controls.

The MOSFET features a monolithic integrated body diode with fast reverse recovery (t_rr = 33 ns) and low Q_rr (71 nC), minimizing commutation loss and EMI in synchronous rectification and H-bridge topologies. Thermal design is supported by low junction-to-case resistance (1.1 K/W) and MSL1 reflow compatibility up to 260 °C.

Key Specifications

Pinout & Package

IPD30N06S2L-13 is housed in PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package complies with RoHS and MSL1 reflow standards (peak 260 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL100N5LF6AG and IRL3803PBF, IPD30N06S2L-13 uniquely combines AEC-Q101 qualification, 100% UIS testing, and 175 °C operation-making it the sole choice for new automotive designs requiring long-term reliability and thermal margin.

Availability

IPD30N06S2L-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and LED lighting systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPD30N06S2L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-current, low-voltage automotive and industrial switching applications demanding ruggedness, efficiency, and qualification compliance.

FAQ

Is IPD30N06S2L-13 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.2–2.0 V and guaranteed enhancement at V_GS = 4.5 V, this MOSFET fully turns on using standard 3.3 V logic outputs. Its R_DS(on) remains low (13.1 mΩ typ) at 4.5 V, ensuring minimal conduction loss without external level-shifting circuitry.

What is the maximum PCB copper area required for full 30 A operation at 100 °C case temperature?

Per Infineon ANPS071E, a 6 cm² copper pour (single-layer, 70 µm thick) on FR4 PCB achieves R_thJA = 50 K/W, enabling 30 A continuous current at T_C = 100 °C. Smaller footprints increase thermal resistance and require current derating-refer to Figure 1 on page 4 of the datasheet for exact derating curves.

Does the integrated body diode support synchronous rectification?

Yes. The device's body diode is characterized for fast reverse recovery (t_rr = 33 ns, Q_rr = 71 nC at I_F = 30 A), making it suitable for synchronous rectification in buck converters. However, for optimal efficiency, external Schottky diodes or dedicated synchronous controllers are recommended when switching frequencies exceed 500 kHz.

How does the 240 mJ avalanche rating translate to real-world circuit protection?

The 240 mJ single-pulse avalanche energy rating means the MOSFET can safely absorb transient inductive energy-e.g., from a 30 A solenoid coil with L ≈ 0.27 mH switched off at di/dt = 100 A/µs-without failure. This eliminates need for external snubbers in many automotive load-dump and relay-driving configurations.