Infineon Technologies IPD30N06S4L23ATMA1

Overview

IPD30N06S4L23ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET with 60 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 23 mΩ maximum R_DS(on) at V_GS = 10 V. It operates up to 175 °C, features 100% avalanche testing, and is used in automotive DC-DC converters, motor control inverters, and high-reliability power switches.

For engineers reviewing the IPD30N06S4L23ATMA1 datasheet, IPD30N06S4L23ATMA1 pinout, IPD30N06S4L23ATMA1 application, or IPD30N06S4L23ATMA1 equivalent, key selection criteria include its 23 mΩ R_DS(on) at 10 V gate drive, 120 A pulsed drain rating, integrated body diode with 10 ns t_rr, and PG-TO252-3-11 surface-mount package for thermal performance in space-constrained automotive PCBs.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V and 5 V logic-level compatibility while maintaining noise immunity.

The MOSFET integrates a fast-recovery body diode (t_rr = 10 ns, Q_rr = 10 nC) and supports hard-switched topologies with 18 mJ single-pulse avalanche energy at I_D = 15 A - critical for load dump and inductive turn-off protection in engine control units.

Key Specifications

Pinout & Package

IPD30N06S4L23ATMA1 is housed in PG-TO252-3-11 (DPAK), a surface-mount package with exposed drain pad for enhanced thermal transfer. The three terminals are arranged in standard DPAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL30DN6LF7AG and IRF3710PBF, IPD30N06S4L23ATMA1 delivers superior thermal performance in surface-mount automotive systems due to its MSL1-rated PG-TO252 package, verified AEC-Q101 compliance, and lower R_DS(on) with tighter parametric distribution - making it optimal for volume production of safety-critical power stages.

Availability

IPD30N06S4L23ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, 12 V DC-DC converters, and BLDC motor inverters requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IPD30N06S4L23ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive power systems - emphasizing low R_DS(on), fast switching, and ruggedness under transient stress.

FAQ

What is the maximum allowable gate-source voltage for IPD30N06S4L23ATMA1?

The absolute maximum V_GS is ±16 V. Operation beyond this risks irreversible gate oxide damage. For reliable 12 V system design, a 12 V gate drive with 100 mV undershoot/overshoot margin is recommended; external Zener clamping at 12 V is advised if driving from unregulated sources.

Does IPD30N06S4L23ATMA1 require a gate resistor in automotive applications?

Yes - a series gate resistor (typically 3.5 Ω, as specified in the datasheet's switching characterization) is required to control dV/dt, suppress ringing, and limit peak gate current. Omitting it increases EMI risk and may cause false turn-on due to Miller effect in high-di/dt motor drive environments.

Can IPD30N06S4L23ATMA1 replace older OptiMOS®-T1 devices in existing designs?

Yes - it is a direct drop-in replacement for IPD30N06S2L-23 with identical pinout, improved R_DS(on) (23 mΩ vs. 28 mΩ), and tighter V_GS(th) distribution. No layout or gate drive changes are needed, though thermal margin improves by ~15% due to lower conduction loss.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - its 10 ns t_rr and 10 nC Q_rr enable efficient synchronous rectification up to 500 kHz. However, external Schottky diodes are still preferred above 1 MHz or when ultra-low forward voltage (<0.4 V) is mandatory, as V_SD is 0.95 V at 30 A.