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Infineon Technologies IPD30N12S3L31ATMA2

Name: IPD30N12S3L31ATMA2
Brand: Infineon Technologies
SKU: IPD30N12S3L31ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD30N12S3L31ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N12S3L31ATMA2.pdf

Description:: MOSFET_(120V 300V)

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Product details

Overview

IPD30N12S3L31ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 120 V V_DS, 30 A continuous drain current at T_C = 25°C, and 31 mΩ max R_DS(on) at V_GS = 10 V. It serves as a high-reliability switching element in automotive DC-DC converters, motor control stages, and load-switching circuits operating up to 175°C junction temperature.

For engineers reviewing the IPD30N12S3L31ATMA2 datasheet, IPD30N12S3L31ATMA2 pinout, IPD30N12S3L31ATMA2 application, or IPD30N12S3L31ATMA2 equivalent, key selection criteria include its 100% avalanche-tested ruggedness, MSL1 reflow compatibility, low gate charge (Q_g = 24–31 nC), and integrated body diode with 72 ns t_rr and 150 nC Q_rr.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables robust TTL/CMOS-level drive, while the 3.7 V gate plateau voltage supports stable Miller region control during hard switching.

The MOSFET integrates a fast, soft-recovery body diode with 0.6–1.2 V forward voltage at 30 A and 25°C, and exhibits defined safe operating area (SOA) up to 100 µs pulse width. Thermal resistance R_thJC is 2.6 K/W, enabling high-power density mounting on minimal PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Withstands full 12 V system transients including load dump up to ISO 7637-2 Pulse 5a.
R_DS(on) max	31 mΩ at V_GS = 10 V - Enables ≤0.93 W conduction loss at 30 A, reducing heatsink requirements.
Q_g	24–31 nC - Low total gate charge minimizes driver power and enables efficient 100+ kHz switching in DC-DC stages.
E_AS	138 mJ - Fully tested single-pulse avalanche energy ensures robustness against inductive turn-off stress without external snubbers.
t_rr	72 ns - Fast, soft reverse recovery reduces switching node ringing and EMI in half-bridge configurations.
T_j max	+175°C - Supports operation in engine bay environments without derating in high-ambient thermal designs.
I_D cont	30 A at T_C = 25°C - Rated for sustained current in compact SMD power stages with adequate board cooling.

Pinout & Package

IPD30N12S3L31ATMA2 is housed in PG-TO252-3-11 (D-Pak), a surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged in standard TO252 configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level gate drive; threshold range 1.2–2.4 V allows direct MCU interface with 3.3 V or 5 V outputs.
Pin 2 (Drain)	High-side switch output	Exposed copper pad electrically connected to drain; must be soldered to ≥6 cm² PCB copper for R_thJA = 40 K/W.
Pin 3 (Source)	Power return path	Provides low-inductance source connection; ties to ground plane or low-side switch source in half-bridge topologies.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use across temperature, humidity, and mechanical stress per JESD47 and AEC standards.
100% avalanche tested	Each unit undergoes single-pulse E_AS screening at 138 mJ, ensuring field reliability under inductive fault conditions.
MSL1 rating	Suitable for lead-free reflow up to 260°C peak, eliminating moisture sensitivity handling requirements.
Integrated body diode	Optimized for freewheeling in synchronous rectification and H-bridge motor drives with low Q_rr (150 nC).
Low R_thJC	2.6 K/W junction-to-case thermal resistance enables high power density when mounted on thermally enhanced PCBs.

Applications

Automotive DC-DC Converters

Engine Control Unit (ECU) Load Switching

Use Scenario: Step-down conversion from 12 V battery to 3.3 V/5 V rails for microcontrollers and sensors.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with low R_DS(on) and fast t_r/t_f.

Use Value: Reduces conduction loss by >35% vs. older 40 mΩ MOSFETs, lowering thermal load on compact ECU PCBs.

Use Scenario: Controlled power delivery to fuel injectors, solenoids, and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side or high-side load switch with integrated avalanche capability for inductive kickback suppression.

Use Value: Eliminates need for external flyback diodes due to rugged 138 mJ E_AS and 30 A I_AS rating.

Electric Power Steering (EPS) Motor Drivers

On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: Half-bridge phase-leg switching in 12 V EPS motor control modules.

IC Role / Device Role / Timing Role: Low-side switch with fast t_rr (72 ns) and soft-recovery body diode to minimize shoot-through risk and EMI.

Use Value: Enables clean commutation at 10–20 kHz PWM with reduced gate driver stress and lower dv/dt noise.

Use Scenario: Isolated auxiliary power supply for gate drivers and communication ICs in 400 V OBC systems.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or active clamp forward converter running at 100–250 kHz.

Use Value: Q_g of 24–31 nC allows efficient drive with low-power isolated gate drivers, improving overall OBC efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N12N3GATMA1	120 V, 180 A, TO263-7L, R_DS(on) = 1.8 mΩ - higher current, larger package, higher Q_g (110 nC)	Designed for main inverter legs in 48 V mild-hybrid systems; not drop-in for D-Pak footprints	Select when >100 A peak current and paralleling are required; requires redesign for layout and gate drive.
IRF3205PBF	55 V, 110 A, TO220AB, R_DS(on) = 8 mΩ - lower voltage rating, non-automotive, no AEC-Q101	General-purpose industrial switching only; unsuitable for automotive transients or temperature cycling	Acceptable only for non-automotive prototypes or cost-sensitive non-safety applications with <60 V bus.

Compared with IPB180N12N3GATMA1 and IRF3205PBF, IPD30N12S3L31ATMA2 offers optimal balance of automotive qualification, D-Pak footprint, 120 V rating, and 31 mΩ R_DS(on) for space-constrained 12 V power stages where reliability and reflow compatibility are mandatory.

Availability

IPD30N12S3L31ATMA2 is available at Aetrix Electronics and suitable for automotive power management, engine control unit (ECU) load switching, and electric power steering (EPS) motor drivers requiring stable component supply across extended product lifecycles.

Supply support for IPD30N12S3L31ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability switching in 12 V automotive subsystems including ADAS, body electronics, and electrified powertrain controls.

FAQ

Is IPD30N12S3L31ATMA2 pin-compatible with earlier IPD30N12S3L variants?

Yes - IPD30N12S3L31ATMA2 uses the identical PG-TO252-3-11 package and pinout as IPD30N12S3L-31, with identical terminal assignments (Gate, Drain, Source) and mechanical dimensions. No PCB layout change is required for migration.

What is the maximum recommended gate resistor value for 200 kHz switching?

For 200 kHz operation with V_GS = 10 V drive, a 3.5 Ω gate resistor is specified in the datasheet for typical timing (t_d(on) = 6 ns, t_r = 4 ns). Using >10 Ω increases switching losses significantly; 2–5 Ω is optimal for EMI/loss trade-off.

Does this MOSFET require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive. While V_GS can tolerate –5 V to –20 V for up to 168 non-consecutive hours, negative turn-off is not required or recommended for standard automotive applications.

Can IPD30N12S3L31ATMA2 replace discrete MOSFETs in existing AEC-Q200-compliant designs?

Yes - its AEC-Q101 qualification exceeds AEC-Q200 requirements for passive components. However, system-level validation of thermal performance, SOA margins, and EMC behavior remains necessary when substituting into legacy designs.

IPD30N12S3L31ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 29µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1970 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N12S3L31ATMA2 FAQ

1.How can I place an order for IPD30N12S3L31ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N12S3L31ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N12S3L31ATMA2 reliable?

The price and inventory of IPD30N12S3L31ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N12S3L31ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD30N12S3L31ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N12S3L31ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N12S3L31ATMA2?

IPD30N12S3L31ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N12S3L31ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N12S3L31ATMA2?

For technical support, including IPD30N12S3L31ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N12S3L31ATMA2 requirements.

6.How does Aetrix verify that IPD30N12S3L31ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD30N12S3L31ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N12S3L31ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD30N12S3L31ATMA2?

All IPD30N12S3L31ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N12S3L31ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N12S3L31ATMA2 part is unused and in its original packaging.

Return procedure for IPD30N12S3L31ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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