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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD320N20N3GBTMA1

Name: IPD320N20N3GBTMA1
Brand: Infineon Technologies
SKU: IPD320N20N3GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD320N20N3GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD320N20N3GBTMA1.pdf

Description:: MOSFET N-CH 200V 34A TO252-3

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Product details

Overview

IPD320N20N3GBTMA1 from Infineon Technologies is an N-channel 200 V, 34 A OptiMOSTM3 power MOSFET in PG-TO252-3 package, featuring 27–32 mΩ R_DS(on) at V_GS = 10 V, 175 °C max junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-frequency switching in DC-DC converters and synchronous rectifiers.

For engineers reviewing the IPD320N20N3GBTMA1 datasheet, IPD320N20N3GBTMA1 pinout, IPD320N20N3GBTMA1 application, or IPD320N20N3GBTMA1 equivalent, key selection criteria include its 200 V V_DS, 34 A continuous drain current at T_C = 25 °C, 1.1 K/W R_thJC, 22–29 nC total gate charge, and integrated body diode with 110 ns t_rr and 500 nC Q_rr.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low conduction and switching losses. Its gate threshold voltage (2–4 V) enables standard 10 V gate drive compatibility, while the 4.4 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The device integrates a fast-recovery body diode with 0.9–1.2 V forward voltage at 34 A and 25 °C, and exhibits robust unclamped inductive switching capability (E_AS = 190 mJ at I_D = 34 A), making it suitable for non-isolated buck, flyback, and LLC resonant converter topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 160 V DC bus designs with 25 % margin for voltage transients
R_DS(on) max	32 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1.1 W conduction loss at 34 A
I_D cont.	34 A at T_C = 25 °C - requires ≥6 cm² copper area on FR4 PCB for thermal compliance
Q_g	22–29 nC - determines gate driver current demand and switching speed trade-off
t_r/t_f	9 ns / 4 ns - supports >1 MHz switching in hard-switched topologies
E_AS	190 mJ - withstands single-pulse inductive energy without failure under defined test conditions
t_rr	110 ns - limits reverse recovery loss and EMI in synchronous rectification

Pinout & Package

IPD320N20N3GBTMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain pad for thermal enhancement. The package conforms to JEDEC MS-012AC and features Pb-free lead plating per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node
Pin 2 (Gate)	Control input	Receives gate drive signal; requires 10 V for full enhancement
Pin 3 (Drain)	Power output	Exposed metal pad; primary thermal path to PCB copper; connects to HV rail

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	Enables higher efficiency than legacy MOSFETs in 300–1000 kHz SMPS designs
175 °C maximum junction temperature	Supports operation in thermally constrained environments without derating at full load
Fast body diode (t_rr = 110 ns)	Reduces cross-conduction loss and improves light-load efficiency in synchronous rectification
JEDEC-qualified reliability	Validated for automotive-grade stress testing (JESD22-A108, J-STD-020)
Low C_oss (135–180 pF)	Minimizes capacitive turn-off loss and improves ZVS capability in resonant converters

Applications

Server VRMs

Industrial DC-DC Converters

Use Scenario: High-current, multi-phase buck converters delivering 12 V → 1 V/100+ A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each phase leg.

Use Value: 27–32 mΩ R_DS(on) and 110 ns t_rr reduce conduction and reverse recovery losses, improving full-load efficiency by ≥0.8 % vs. older 40 mΩ parts.

Use Scenario: Isolated 48 V input to 12/24 V output converters in PLCs and motor drives.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier.

Use Value: 200 V rating and 190 mJ E_AS ensure robustness against reflected transients and leakage inductance spikes.

Telecom Power Supplies

Onboard EV Chargers

Use Scenario: High-density 3 kW telecom rectifiers operating at 500 kHz with forced air cooling.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology.

Use Value: Low C_oss (135–180 pF) and 9 ns rise time enable efficient ZVS operation up to 700 kHz.

Use Scenario: Bidirectional AC/DC + DC/DC stages in 11 kW OBCs with SiC front-end.

IC Role / Device Role / Timing Role: Low-side switch in isolated DC-DC stage handling 400 V battery input.

Use Value: 175 °C T_j rating and 1.1 K/W R_thJC allow sustained 34 A operation under 85 °C ambient with minimal heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP34NF20	R_DS(on) = 50 mΩ (higher conduction loss); Q_g = 45 nC (slower switching)	Lower efficiency in high-frequency, high-current apps; less suitable for >300 kHz operation	Prefer when cost sensitivity outweighs efficiency targets and thermal budget allows higher R_DS(on)
IRF6644	Package: PQFN 5×6 mm; R_DS(on) = 22 mΩ but V_DS = 100 V only	Not rated for 200 V systems; unsuitable for 48 V+ input or industrial HV rails	Select only for 12–48 V input topologies where lower R_DS(on) justifies voltage limitation

Compared with STP34NF20 and IRF6644, IPD320N20N3GBTMA1 uniquely balances 200 V rating, sub-32 mΩ R_DS(on), and 29 nC Q_g in a thermally efficient DPAK package-making it optimal for space-constrained, high-efficiency 200 V-class power stages.

Availability

IPD320N20N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPD320N20N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM3 family, designed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial SMPS applications.

FAQ

What is the maximum allowable gate-source voltage for IPD320N20N3GBTMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10–15 V for full enhancement with margin; gate voltage must not undershoot below –5 V during switching transitions to avoid unintended turn-on due to dv/dt coupling.

Does IPD320N20N3GBTMA1 have avalanche capability, and how is it specified?

Yes-it is fully rated for unclamped inductive switching with E_AS = 190 mJ at I_D = 34 A, R_GS = 25 Ω, and T_j = 25 °C. This rating is validated per JEDEC JESD22-A116 and applies to single-pulse conditions; repetitive avalanche is not guaranteed.

Can IPD320N20N3GBTMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increases with T_j) enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared copper area to minimize thermal imbalance between devices.

What is the thermal resistance from junction to case, and how should it be applied in layout?

R_thJC is 1.1 K/W, measured from die junction to the bottom of the exposed drain pad. To achieve this value, the PCB must provide ≥6 cm² of 70 µm thick copper connected directly to the drain pad on a vertical FR4 board in still air-no additional heatsink required for ≤34 A continuous operation at T_C = 25 °C.

IPD320N20N3GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD320N20N3GBTMA1 FAQ

1.How can I place an order for IPD320N20N3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD320N20N3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD320N20N3GBTMA1 reliable?

The price and inventory of IPD320N20N3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD320N20N3GBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD320N20N3GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD320N20N3GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD320N20N3GBTMA1?

IPD320N20N3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD320N20N3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD320N20N3GBTMA1?

For technical support, including IPD320N20N3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD320N20N3GBTMA1 requirements.

6.How does Aetrix verify that IPD320N20N3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD320N20N3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD320N20N3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD320N20N3GBTMA1?

All IPD320N20N3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD320N20N3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD320N20N3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD320N20N3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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