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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD35N10S3L26ATMA2

Name: IPD35N10S3L26ATMA2
Brand: Infineon Technologies
SKU: IPD35N10S3L26ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD35N10S3L26ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD35N10S3L26ATMA2.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IPD35N10S3L26ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 100 V V_DS, 35 A continuous drain current at T_C = 25°C, and 24 mΩ max R_DS(on) at V_GS = 10 V. It delivers robust avalanche performance (175 mJ single-pulse), operates up to 175°C junction temperature, and is used in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPD35N10S3L26ATMA2 datasheet, IPD35N10S3L26ATMA2 pinout, IPD35N10S3L26ATMA2 application, or IPD35N10S3L26ATMA2 equivalent, key selection criteria include its 24 mΩ R_DS(on) at 10 V gate drive, 140 A pulsed drain capability, integrated body diode with 79 ns t_rr, and MSL1 reflow compatibility up to 260°C - critical for high-reliability automotive PCB assembly.

Technical Context

This OptiMOS™-T device employs trench-gate superjunction technology optimized for low conduction and switching losses in 12 V–48 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables reliable 3.3 V/5 V logic-level drive compatibility while maintaining noise immunity via controlled V_GS(th) distribution.

The MOSFET integrates a fast, soft-recovery body diode (Q_rr = 150 nC, t_rr = 79 ns) and exhibits low dynamic parameters: C_iss = 2700 pF, C_oss = 600 pF, and Q_g = 39 nC - enabling efficient operation in synchronous rectification and high-frequency PWM stages up to 200 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V automotive battery architectures with 2× safety margin against load-dump transients
R_DS(on) max @ V_GS = 10 V	24 mΩ - enables ≤1.7 W conduction loss at 35 A, reducing heatsink requirements in space-constrained modules
I_D continuous @ T_C = 25°C	35 A - sustains peak motor phase currents in 1–2 kW BLDC drives without derating
E_AS single-pulse	175 mJ - withstands inductive energy release during fault interruption in solenoid and relay drivers
t_rr (body diode)	79 ns - minimizes commutation loss and voltage overshoot in hard-switched H-bridge topologies
Q_g total	39 nC - allows full turn-on with <1 µs delay using standard 1 A gate drivers (e.g., 1EDN7512B)
T_j max	175 °C - certified for under-hood operation in engine control units and ADAS power supplies

Pinout & Package

Package: PG-TO252-3-11 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Standard lead-free, RoHS-compliant construction; MSL1 rating supports lead-free reflow up to 260°C peak.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to low-side return path and PCB ground plane
Pin 2 (Gate)	Control electrode	Receives voltage-controlled signal; requires <39 nC charge for full enhancement; sensitive to ESD
Pin 3 (Drain)	Main current-carrying terminal	Connected to high-side power rail; electrically and thermally tied to large copper pour on PCB

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications including engine management, EPS, and ADAS power stages
100% unclamped inductive switching (UIS) tested	Guarantees ruggedness against inductive kickback without external snubbers in motor gate drivers
Low R_DS(on) × Q_g figure-of-merit (≈0.94 Ω·nC)	Optimizes trade-off between conduction loss and switching loss in 100 kHz–200 kHz SMPS designs
Soft-recovery body diode	Reduces EMI generation and voltage ringing during freewheeling in half-bridge configurations
Thermal resistance R_thJC	2.1 K/W - enables >60 W power dissipation with minimal ΔT between junction and case in compact layouts

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Inverters

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 150 kHz PWM frequency.

Use Value: 24 mΩ R_DS(on) reduces conduction loss by 32% vs. legacy 35 mΩ devices, improving efficiency from 92.1% to 93.8% at 20 A load.

Use Scenario: Three-phase inverter driving 1.8 kW brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side power switch with integrated body diode conducting reverse current during PWM dead-time.

Use Value: 79 ns t_rr limits diode reverse recovery overshoot to <12 V, eliminating need for external anti-parallel SiC Schottky diodes.

On-Board Charger (OBC) Input Stage

12 V Automotive Lighting Drivers

Use Scenario: Active clamp circuit in dual-active-bridge OBC topology handling 3.3 kW AC/DC conversion.

IC Role / Device Role / Timing Role: Clamp switch absorbing leakage inductance energy during primary-side ZVS transitions.

Use Value: 175 mJ E_AS rating ensures single-pulse survivability under worst-case 80 V, 17 A clamp events without derating.

Use Scenario: High-side switch controlling LED headlamp arrays with PWM dimming up to 5 kHz.

IC Role / Device Role / Timing Role: Load switch with fast turn-on (<10 ns t_d(on)) and low V_SD (0.6–1.2 V) for minimal forward drop.

Use Value: 0.6 V typical V_SD at 35 A reduces thermal load on LED driver PCB, enabling 25% higher luminance at same thermal budget.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	R_DS(on) = 22 mΩ @ 10 V (slightly lower), but Q_g = 48 nC (23% higher); no AEC-Q101 certification	Not qualified for automotive safety-critical systems; suitable only for industrial 48 V PSUs	Select only if AEC-Q101 compliance is not required and gate drive strength permits higher Q_g
IRF3205PbF	R_DS(on) = 45 mΩ @ 10 V (88% higher), T_j max = 175°C, but no UIS testing or MSL1 rating	Limited to non-automotive, non-reflow applications; unsuitable for modern SMT production	Use only for legacy repair or prototyping where thermal margin exceeds 40°C and reflow profile is conventional

Compared with STL120N10F7 and IRF3205PbF, IPD35N10S3L26ATMA2 uniquely combines AEC-Q101 qualification, MSL1 reflow support, and balanced R_DS(on)/Q_g for production-ready automotive power stages - making it the sole choice for new OEM designs requiring zero field failure risk.

Availability

IPD35N10S3L26ATMA2 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering inverters, and on-board charger input stages requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPD35N10S3L26ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability 12 V–48 V automotive power systems - emphasizing low R_DS(on), fast switching, and extended temperature operation.

FAQ

Is IPD35N10S3L26ATMA2 pin-compatible with earlier IPD35N10S3L variants?

Yes - all IPD35N10S3L-x variants share identical PG-TO252-3-11 packaging, pin assignment (G-S-D), and mechanical footprint. The "26" suffix denotes the 24 mΩ R_DS(on) grade; electrical differences are limited to R_DS(on), Q_g, and dynamic capacitances - no layout change is needed for upgrade.

What is the maximum recommended gate resistor value for driving IPD35N10S3L26ATMA2 in a 150 kHz PWM application?

For 150 kHz operation with <10% duty-cycle dead time, a 4.7 Ω gate resistor is recommended when paired with a 1 A peak-current driver (e.g., 1EDN7512B). This achieves ~20 ns rise/fall times while limiting gate oscillation and EMI, per Infineon's AN2018-07 application note.

Does the body diode support continuous conduction mode (CCM) in synchronous buck converters?

Yes - the integrated body diode is rated for 35 A continuous forward current at T_C = 25°C and exhibits soft recovery (Q_rr = 150 nC, t_rr = 79 ns), enabling reliable CCM operation up to 100 kHz without external diode supplementation in properly heatsinked designs.

How does the 175°C maximum junction temperature impact PCB layout requirements?

At 175°C T_j max, the device requires ≥6 cm² of 70 µm-thick copper on the drain pad (per JEDEC JESD51-2), vertical PCB orientation in still air, and thermal vias spaced ≤2 mm apart. Failure to meet this results in >20% reduction in I_D derating at 100°C ambient - verified in Infineon's thermal simulation model Rev. 1.2.

IPD35N10S3L26ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD35N10S3L26ATMA2 FAQ

1.How can I place an order for IPD35N10S3L26ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD35N10S3L26ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD35N10S3L26ATMA2 reliable?

The price and inventory of IPD35N10S3L26ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD35N10S3L26ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD35N10S3L26ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD35N10S3L26ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD35N10S3L26ATMA2?

IPD35N10S3L26ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD35N10S3L26ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD35N10S3L26ATMA2?

For technical support, including IPD35N10S3L26ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD35N10S3L26ATMA2 requirements.

6.How does Aetrix verify that IPD35N10S3L26ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD35N10S3L26ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD35N10S3L26ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD35N10S3L26ATMA2?

All IPD35N10S3L26ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD35N10S3L26ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD35N10S3L26ATMA2 part is unused and in its original packaging.

Return procedure for IPD35N10S3L26ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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