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Infineon Technologies IPD35N12S3L24ATMA2

Name: IPD35N12S3L24ATMA2
Brand: Infineon Technologies
SKU: IPD35N12S3L24ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD35N12S3L24ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD35N12S3L24ATMA2.pdf

Description:: MOSFET_(120V 300V)

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Product details

Overview

IPD35N12S3L24ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 120 V V_DS, 35 A continuous drain current at T_C = 25°C, and 24 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175°C junction temperature and is 100% avalanche tested - used in automotive DC-DC converters and motor control stages where high reliability under transient stress is required.

For engineers reviewing the IPD35N12S3L24ATMA2 datasheet, IPD35N12S3L24ATMA2 pinout, IPD35N12S3L24ATMA2 application, or IPD35N12S3L24ATMA2 equivalent, key selection criteria include its 2.1 K/W R_thJC, 140 A pulsed drain capability, integrated body diode with 79 ns t_rr, and MSL1 reflow compatibility for automated SMT assembly in harsh-environment automotive modules.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V–48 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables robust drive with standard 3.3 V/5 V logic-level controllers, while the 30–39 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz.

The MOSFET integrates a fast-recovery body diode (t_rr = 79 ns, Q_rr = 150 nC) and delivers 175 mJ single-pulse avalanche energy at I_D = 17 A - enabling reliable operation during inductive load switching without external snubbers in engine control units and EPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V automotive battery architectures with 2× safety margin against load dump transients
R_DS(on) max	24 mΩ at V_GS = 10 V - enables ≤0.84 W conduction loss at 35 A, reducing heatsink requirements
I_D continuous	35 A at T_C = 25°C - suitable for high-current gate drivers and BLDC phase switches
E_AS	175 mJ - withstands repetitive inductive turn-off energy in motor phase-leg configurations
t_rr	79 ns - minimizes commutation loss and EMI in synchronous rectification topologies
R_thJC	2.1 K/W - allows direct thermal coupling to PCB copper pour or heatsink for <10°C rise at 50 W dissipation
Q_g	30–39 nC - compatible with standard gate drivers (e.g., 1EDN7512B) without excessive drive power

Pinout & Package

Package: PG-TO252-3-11 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Standard lead finish: matte tin, RoHS compliant, MSL1 rated to 260°C peak reflow.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground plane or current-sense resistor
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; routed away from noisy traces
Pin 3 (Drain)	Power output / high-side connection	Exposed copper pad on bottom - must be soldered to ≥6 cm² PCB copper area for thermal performance

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use across -55°C to +175°C ambient, including vibration, humidity, and temperature cycling
100% unclamped inductive switching (UIS) test	Guarantees avalanche ruggedness without derating in motor drive fault conditions
Low gate charge asymmetry (Q_gd/Q_gs ≈ 0.6–0.8)	Reduces Miller-induced shoot-through risk in half-bridge layouts
Optimized body diode recovery (Q_rr = 150 nC)	Enables zero-voltage switching (ZVS) in resonant LLC converters without external diode
Thermal resistance R_thJA = 40 K/W (6 cm² copper)	Permits natural-convection cooling in space-constrained ECUs without forced airflow

Applications

Engine Control Unit (ECU)

Electric Power Steering (EPS)

Use Scenario: High-side switch for fuel injector driver circuit with 12 V supply and 10 ms pulse width.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation timing with precise 1 µs turn-on delay and 3 ns fall time.

Use Value: 24 mΩ R_DS(on) limits voltage drop to <0.84 V at 35 A, preserving injector coil energization accuracy under cold-crank conditions.

Use Scenario: Low-side phase switch in 3-phase BLDC motor inverter driving 400 W assist motor.

IC Role / Device Role / Timing Role: Synchronous rectifier with 79 ns reverse recovery enabling >97% efficiency at 15 kHz PWM.

Use Value: 175 mJ avalanche rating absorbs regenerative energy during emergency stop without external clamping.

On-Board Charger (OBC)

12 V DC-DC Converter

Use Scenario: Primary-side switch in interleaved flyback topology converting 400 V battery to 12 V auxiliary rail.

IC Role / Device Role / Timing Role: High-voltage switching element operating at 100 kHz with 6 ns turn-on delay and 18 ns turn-off delay.

Use Value: 2.1 K/W R_thJC enables direct mounting to aluminum heatsink, maintaining <110°C T_j at full 3 kW load.

Use Scenario: Secondary-side synchronous rectifier in isolated forward converter supplying infotainment system.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diode to reduce conduction loss at 35 A output.

Use Value: Integrated body diode with 0.6–1.2 V V_SD cuts forward loss by 40% vs. discrete 40 V Schottky, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N10F7	100 V V_DS, 2.8 mΩ R_DS(on) at 10 V, but only rated to 150°C T_j	Limited to non-under-hood applications due to lower temperature rating	Select when higher current density is needed and ambient stays below 105°C
IRF3205PbF	55 V V_DS, 8 mΩ R_DS(on), no AEC-Q101 qualification or avalanche testing	Not approved for automotive production; requires additional system-level validation	Use only for prototyping or non-safety-critical industrial designs

Compared with STL135N10F7 and IRF3205PbF, IPD35N12S3L24ATMA2 uniquely combines 120 V rating, 175°C operation, AEC-Q101 compliance, and guaranteed avalanche energy - making it the only option qualified for front-end power stages in modern 48 V mild-hybrid vehicles.

Availability

IPD35N12S3L24ATMA2 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and battery management systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IPD35N12S3L24ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T family - engineered specifically for high-efficiency, high-reliability switching in automotive 12 V–48 V power networks, emphasizing ruggedness, thermal performance, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPD35N12S3L24ATMA2?

The absolute maximum gate-source voltage is ±20 V per datasheet Rev. 1.1. Operation beyond ±15 V risks permanent oxide damage. Recommended drive is 10 V for full R_DS(on) specification and 4.5 V minimum for logic-level compatibility - verified across -55°C to +175°C junction range.

Does this MOSFET require a gate resistor for stability?

Yes - a 3.5 Ω gate resistor is specified in dynamic test conditions (t_d(on), t_r) and recommended to dampen ringing caused by L_g–C_iss resonance. Values between 2.2 Ω and 10 Ω balance switching speed and EMI; lower values increase dV/dt stress on gate driver.

Can IPD35N12S3L24ATMA2 replace older OptiMOS™-2 devices in existing designs?

Yes - it is a direct drop-in replacement for IPD35N12N3G (same pinout, improved R_DS(on) and t_rr). Thermal design margins improve due to lower R_thJC (2.1 vs. 2.5 K/W) and higher avalanche energy (175 vs. 120 mJ), allowing reuse of legacy PCB layouts without thermal redesign.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - its 79 ns t_rr and 150 nC Q_rr are characterized for synchronous operation at ≤200 kHz. Forward voltage is 0.6–1.2 V at 35 A and 25°C, delivering lower conduction loss than typical 40 V Schottky diodes in 12 V output stages.

IPD35N12S3L24ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2691 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD35N12S3L24ATMA2 FAQ

1.How can I place an order for IPD35N12S3L24ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD35N12S3L24ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD35N12S3L24ATMA2 reliable?

The price and inventory of IPD35N12S3L24ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD35N12S3L24ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD35N12S3L24ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD35N12S3L24ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD35N12S3L24ATMA2?

IPD35N12S3L24ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD35N12S3L24ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD35N12S3L24ATMA2?

For technical support, including IPD35N12S3L24ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD35N12S3L24ATMA2 requirements.

6.How does Aetrix verify that IPD35N12S3L24ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD35N12S3L24ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD35N12S3L24ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD35N12S3L24ATMA2?

All IPD35N12S3L24ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD35N12S3L24ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD35N12S3L24ATMA2 part is unused and in its original packaging.

Return procedure for IPD35N12S3L24ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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