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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD40N03S4L08ATMA1

Name: IPD40N03S4L08ATMA1
Brand: Infineon Technologies
SKU: IPD40N03S4L08ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD40N03S4L08ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD40N03S4L08ATMA1.pdf

Description:: MOSFET N-CH 30V 40A TO252-31

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Product details

Overview

IPD40N03S4L08ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET with 30 V V_DS, 8.3 mΩ R_DS(on) at V_GS = 10 V and 40 A continuous drain current at T_C = 25 °C. It operates up to 175 °C, is AEC-Q101 qualified, 100% avalanche tested, and housed in PG-TO252-3-11 (DPAK) package - used in high-reliability 12 V automotive power switching such as motor control and DC-DC converters.

For engineers reviewing the IPD40N03S4L08ATMA1 datasheet, IPD40N03S4L08ATMA1 pinout, IPD40N03S4L08ATMA1 application, or IPD40N03S4L08ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (23 mJ), thermal resistance (R_thJC = 3.6 K/W), and diode forward voltage (V_SD = 0.95 V at 40 A).

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.0–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility, while its 15–20 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The integrated body diode features fast reverse recovery (t_rr = 12 ns, Q_rr = 10 nC) and low forward voltage (0.95 V at 40 A), reducing commutation loss in synchronous rectification and H-bridge configurations. Thermal design is enabled by a validated R_thJC of 3.6 K/W and JEDEC-standard MSL1 reflow rating (260 °C peak).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V battery rail applications with transient margin
R_DS(on) max	8.3 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 40 A, critical for thermally constrained modules
I_D cont	40 A at T_C = 25 °C - Sustains high-current loads like radiator fan or seat motor drivers without derating
E_AS	23 mJ (I_D = 40 A) - Withstands inductive turn-off surges in automotive solenoid and motor control without failure
V_GS(th)	1.0–2.2 V - Ensures reliable turn-on with standard microcontroller GPIOs and reduces risk of spurious conduction
Q_g	15–20 nC - Supports efficient 100–500 kHz switching in DC-DC converters with moderate gate driver strength
V_SD	0.95 V at I_F = 40 A, T_j = 25 °C - Low body diode loss improves efficiency in freewheeling and bidirectional power stages
R_thJC	3.6 K/W - Allows direct heatsink mounting on PCB copper pour for passive thermal management in space-constrained ECUs

Pinout & Package

PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal and electrical connection. Standard 3-pin surface-mount configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤16 V absolute max; low input capacitance (C_iss = 1520 pF) eases driver sizing
Pin 2 (Drain)	Main current path (high-side or low-side)	Exposed copper tab - must be soldered to large PCB copper area for thermal dissipation and low-inductance current return
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides Kelvin source connection point; critical for accurate current monitoring and stable gate control loop

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per ISO/TS 16949
100% unclamped inductive switching (UIS) tested	Each unit verified to survive 23 mJ single-pulse avalanche energy - eliminates need for external snubbers in motor drives
Low R_DS(on) at 4.5 V	9.7–13.0 mΩ - Enables full-load operation directly from 5 V MCU outputs without level-shifting circuitry
Green product (RoHS compliant)	Lead-free, halogen-free, and compliant with EU Directive 2011/65/EU - meets Tier 1 OEM environmental requirements
MSL1 reflow rating	Rated for peak reflow temperatures up to 260 °C - compatible with standard lead-free SMT assembly processes

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with strict EMI and reliability requirements.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive 10–20 A pulses at 1–10 Hz with precise timing.

Use Value: 8.3 mΩ R_DS(on) minimizes self-heating during extended duty cycles; 23 mJ E_AS absorbs inductive kickback without clamping diodes.

Use Scenario: PWM-controlled 12 V blower motor in passenger cabin HVAC system operating continuously at ambient up to 85 °C.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch; modulated at 20–25 kHz to reduce acoustic noise.

Use Value: 175 °C rated junction temperature ensures long-term stability; low Q_g (15–20 nC) enables efficient high-frequency switching with minimal gate drive loss.

12 V Automotive DC-DC Converter (Step-Down)

Electric Power Steering (EPS) Phase Leg Switch

Use Scenario: Synchronous buck converter supplying 5 V/3 A to ADAS camera module from vehicle battery.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side) in 300 kHz fixed-frequency converter; conducts >90% of switching cycle.

Use Value: 0.95 V V_SD and fast t_rr (12 ns) reduce freewheeling loss and improve light-load efficiency over Schottky alternatives.

Use Scenario: Three-phase inverter leg driving 12 V EPS assist motor with torque ripple <5% and fault response <10 µs.

IC Role / Device Role / Timing Role: Low-side switch in phase-leg topology; subjected to shoot-through protection, overcurrent detection, and short-circuit ruggedness demands.

Use Value: 100% UIS-tested avalanche capability ensures survival during fault events; R_thJC = 3.6 K/W enables compact heatsinking in tight EPS housing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N3LLH6	R_DS(on) = 3.3 mΩ @ 10 V (lower), but larger DFN5x6 package; higher Q_g (34 nC)	Better conduction efficiency but requires stronger gate driver; less suitable for space-constrained DPAK footprints	Select when thermal headroom allows larger package and gate drive capability supports higher Q_g
IRF3708PBF	R_DS(on) = 13 mΩ @ 10 V (higher); no AEC-Q101 qualification; R_thJC = 4.2 K/W	Not automotive-qualified; lower reliability for under-hood deployment; higher conduction loss at 40 A	Select only for non-automotive industrial prototypes where cost is primary and qualification not required

Compared with STL130N3LLH6 and IRF3708PBF, IPD40N03S4L08ATMA1 delivers optimal balance of automotive qualification, DPAK footprint compatibility, 8.3 mΩ conduction loss, and 23 mJ avalanche ruggedness - making it preferred for production ECU, EPS, and HVAC modules requiring zero field failures.

Availability

IPD40N03S4L08ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and HVAC blower motor controllers requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for IPD40N03S4L08ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding AEC-Q101 compliance and robust avalanche performance.

FAQ

Is IPD40N03S4L08ATMA1 suitable for 5 V logic-level gate drive?

Yes. With a gate threshold voltage range of 1.0–2.2 V and guaranteed R_DS(on) of 9.7–13.0 mΩ at V_GS = 4.5 V, this MOSFET fully turns on using standard 5 V microcontroller outputs. No level shifter is required for most automotive MCU interfaces.

What is the maximum PCB copper area needed for thermal performance?

For optimal thermal performance, Infineon specifies a minimum 6 cm² copper area (single-layer, 70 µm thick) connected to the drain tab on FR4 PCB. This achieves R_thJA = 40 K/W in vertical still-air conditions - sufficient for 40 A continuous operation at T_C ≤ 100 °C.

Does this part include an integrated Schottky diode?

No. It features a robust silicon body diode with V_SD = 0.95 V at 40 A and t_rr = 12 ns. While not a Schottky, its fast recovery and low forward drop are optimized for synchronous rectification in automotive DC-DC converters without external diode replacement.

Can IPD40N03S4L08ATMA1 replace older OptiMOS®-T1 devices?

Yes - it is a direct drop-in replacement for IPD40N03S3L-08 in PG-TO252-3-11 package. Key improvements include lower R_DS(on) (8.3 vs. 9.5 mΩ), reduced Q_g (15–20 vs. 22–26 nC), and enhanced avalanche ruggedness (23 vs. 18 mJ), enabling higher efficiency and reliability in legacy designs.

IPD40N03S4L08ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 13µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1520 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD40N03S4L08ATMA1 FAQ

1.How can I place an order for IPD40N03S4L08ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD40N03S4L08ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD40N03S4L08ATMA1 reliable?

The price and inventory of IPD40N03S4L08ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD40N03S4L08ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD40N03S4L08ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD40N03S4L08ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD40N03S4L08ATMA1?

IPD40N03S4L08ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD40N03S4L08ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD40N03S4L08ATMA1?

For technical support, including IPD40N03S4L08ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD40N03S4L08ATMA1 requirements.

6.How does Aetrix verify that IPD40N03S4L08ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD40N03S4L08ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD40N03S4L08ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD40N03S4L08ATMA1?

All IPD40N03S4L08ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD40N03S4L08ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD40N03S4L08ATMA1 part is unused and in its original packaging.

Return procedure for IPD40N03S4L08ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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