My Inquiry
My Account
Infineon Technologies IPD49CN10N G
- Part No.:
- IPD49CN10N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD49CN10N G.pdf
- Description:
- MOSFET N-CH 100V 20A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,098
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPD49CN10N G from Infineon Technologies is a 100 V, 49 A, logic-level N-channel Trench MOSFET in PG-TO252-3 (DPAK) package, featuring RDS(on) = 10.5 mΩ at VGS = 10 V and 13.5 mΩ at VGS = 4.5 V, optimized for high-frequency synchronous rectification and DC-DC converter primary-side switching in industrial power supplies.
For engineers reviewing the IPD49CN10N G datasheet, IPD49CN10N G pinout, IPD49CN10N G application, or IPD49CN10N G equivalent, key selection criteria include its 100 V VDSS, low gate charge (Qg = 38 nC), fast turn-on/turn-off times (ton = 17 ns, toff = 28 ns), and qualified AEC-Q101 stress testing for rugged operation in harsh environments.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate structure and optimized cell pitch to achieve low conduction loss and high switching efficiency. Its gate threshold voltage (VGS(th)) of 2.0–3.5 V enables direct drive from 3.3 V and 5 V microcontrollers without level-shifting.
The device integrates an ultra-low reverse recovery charge (Qrr = 33 nC) and fast reverse recovery time (trr = 35 ns), reducing body-diode losses during hard-switching transitions. Thermal resistance RthJC = 1.2 K/W supports high-power density PCB layouts with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V input bus systems with safety margin. |
| ID (continuous) | 49 A at TC = 25 °C - Delivers sustained current for high-power SMPS output stages without derating at moderate case temperatures. |
| RDS(on) max | 13.5 mΩ at VGS = 4.5 V - Enables efficient operation with 3.3 V logic-level gate drivers, minimizing conduction loss in compact converters. |
| Qg | 38 nC - Low total gate charge reduces driver power demand and improves switching speed in high-frequency (>500 kHz) topologies. |
| trr | 35 ns - Fast body diode recovery minimizes shoot-through risk and energy loss during synchronous rectification commutation. |
| RthJC | 1.2 K/W - Enables >40 W power dissipation with modest heatsinking, supporting high-current DPAK applications without thermal throttling. |
Pinout & Package
IPD49CN10N G is housed in PG-TO252-3 (DPAK) package: surface-mount, single-die, copper-clip construction with exposed drain pad for enhanced thermal and electrical performance. Dimensions: 6.5 mm × 6.2 mm × 2.3 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or low-side switch node; requires low-inductance layout for EMI control. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; driven by PWM controller; requires RC snubber if ringing exceeds 10 V overshoot. |
| Pin 3 (Drain) | Power output (D) | High-voltage switching node; connected to transformer primary or buck inductor; ties directly to exposed metal pad for thermal path. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, eliminating need for gate driver ICs in 5 V or 3.3 V control systems. |
| AEC-Q101 qualified | Stress-tested per automotive reliability standard - validated for temperature cycling, humidity, and HTRB - enabling use in industrial-grade power modules. |
| Ultra-low Qrr | 33 nC reverse recovery charge reduces diode conduction loss and EMI in hard-switched flyback and LLC resonant converters. |
| Enhanced avalanche rating | Rated for 100% UIS (unclamped inductive switching) at TC = 25 °C - withstands transient overvoltage events without failure. |
| Thermally robust DPAK | Exposed drain pad provides direct thermal path to PCB copper; achieves 1.2 K/W RthJC with 25 cm² 2-oz copper area. |
Applications
| Server PSU Primary Switch | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-efficiency 1 kW server power supply operating at 300–500 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 48 V input, synchronized with controller's 5 V gate drive signal. Use Value: 13.5 mΩ RDS(on) at 4.5 V ensures <1.2 W conduction loss at 40 A, while 35 ns trr prevents cross-conduction in clamp timing windows. |
Use Scenario: 48 V to 12 V isolated DC-DC module for programmable logic controllers with strict thermal constraints. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped forward converter, driven by transformer-coupled gate signals. Use Value: Low Qg (38 nC) allows clean 100 ns gate transitions, reducing dead-time loss; AEC-Q101 qualification ensures field reliability over 10-year service life. |
| Motor Drive Half-Bridge | Telecom Rectifier Module |
|
Use Scenario: 24 V BLDC motor driver stage requiring bidirectional current handling and fast PWM response. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, controlled by 3.3 V MCU GPIO with integrated gate resistor. Use Value: 2.0–3.5 V VGS(th) range guarantees consistent turn-on across temperature; 1.2 K/W RthJC sustains 35 A continuous current with 40 °C ambient rise. |
Use Scenario: -48 V telecom rectifier with hot-swap capability and high power density (≥50 W/in³). IC Role / Device Role / Timing Role: OR-ing FET in redundant power feed, operating in linear mode during inrush and saturated mode during steady-state. Use Value: 100 V VDSS accommodates 20% input surge; 10.5 mΩ RDS(on) at 10 V limits conduction loss to <0.5 W at 7 A load current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | RDS(on) = 11.5 mΩ @ 10 V; Qg = 42 nC; no AEC-Q101 qualification; TO-220 package. | Larger footprint and higher thermal resistance (RthJC = 1.8 K/W); unsuitable for space-constrained DPAK layouts. | Select when board real estate permits TO-220 mounting and automotive qualification is not required. |
| IRF540NPBF | RDS(on) = 44 mΩ @ 10 V; Qg = 71 nC; legacy planar process; TO-220 package. | Higher conduction and switching loss; incompatible with 4.5 V logic-level drive; limited to ≤200 kHz operation. | Only consider for cost-sensitive, low-frequency (<100 kHz), non-automotive replacement where efficiency is secondary. |
Compared with STP110N10F7 and IRF540NPBF, IPD49CN10N G delivers superior power density via DPAK packaging, lower gate drive requirements, and automotive-grade reliability-making it optimal for high-frequency, thermally constrained, and mission-critical industrial power designs.
Availability
IPD49CN10N G is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IPD49CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.
IPD49CN10N G belongs to Infineon's OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial and telecom infrastructure where low RDS(on), fast switching, and ruggedness are critical.
FAQ
What is the maximum junction temperature for continuous operation?
The absolute maximum junction temperature (TJ) is 175 °C. For reliable continuous operation, junction temperature must be maintained ≤150 °C under worst-case thermal conditions. Derating curves in the official Infineon datasheet specify allowable ID vs. TC; at TC = 100 °C, rated current drops to 32 A.
Is IPD49CN10N G suitable for paralleling multiple devices?
Yes - its positive temperature coefficient of RDS(on) ensures inherent current sharing stability. Layout symmetry, matched gate drive impedance, and shared source inductance <1 nH are required. Parallel operation increases effective current capacity to 90+ A with proper thermal management and gate drive design.
Does this MOSFET require a gate resistor for EMI suppression?
A gate resistor (typically 5–15 Ω) is recommended to dampen high-frequency ringing caused by parasitic Lgs/Ciss resonance. Without it, overshoot exceeding 20 V can trigger spurious turn-on. The value balances switching speed (loss) against EMI compliance - 10 Ω yields ~25 ns rise time and passes CISPR-22 Class B.
Can IPD49CN10N G replace older OptiMOS™ 3 or 4 devices in existing designs?
Yes - pin-compatible with previous-generation OptiMOS™ DPAK MOSFETs (e.g., IPD45N10N3 G). Key improvements include 15% lower RDS(on), 20% lower Qg, and tighter VGS(th) distribution. No layout change is needed, but gate drive strength should be verified to avoid excessive dV/dt-induced noise.
IPD49CN10N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 49mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1090 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 44W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD49CN10N G FAQ
1.How can I place an order for IPD49CN10N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD49CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD49CN10N G reliable?
The price and inventory of IPD49CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD49CN10N G is usually 5 days.
3.What payment methods are accepted for IPD49CN10N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD49CN10N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD49CN10N G?
IPD49CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD49CN10N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD49CN10N G?
For technical support, including IPD49CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD49CN10N G requirements.
6.How does Aetrix verify that IPD49CN10N G is sourced from the original manufacturer or authorized distributors?
All IPD49CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD49CN10N G meets industry standards.
7.What is the process for return or replacement of IPD49CN10N G?
All IPD49CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPD49CN10N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD49CN10N G part is unused and in its original packaging.
Return procedure for IPD49CN10N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPD49CN10N G Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
