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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50N03S2L06ATMA1

Name: IPD50N03S2L06ATMA1
Brand: Infineon Technologies
SKU: IPD50N03S2L06ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N03S2L06ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N03S2L06ATMA1.pdf

Description:: MOSFET N-CH 30V 50A TO252-31

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Product details

Overview

IPD50N03S2L06ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It delivers 50 A continuous drain current at T_C = 25 °C, 30 V V_DS, and ultra-low 6.4 mΩ R_DS(on) at V_GS = 10 V, with AEC-Q101 qualification and 175 °C operation-used in 12 V battery-powered motor control and DC-DC converter primary-side switches.

For engineers reviewing the IPD50N03S2L06ATMA1 datasheet, IPD50N03S2L06ATMA1 pinout, IPD50N03S2L06ATMA1 application, or IPD50N03S2L06ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (250 mJ), thermal resistance (1.1 K/W junction-to-case), and TO252-3 package compatibility with high-power PCB layouts.

Technical Context

This OptiMOS® device uses trench-gate silicon technology to achieve low conduction loss and fast switching with controlled gate charge (Q_g = 50–68 nC). Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, while integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The MOSFET is characterized for stable operation across –55 °C to +175 °C, with 100% single-pulse avalanche testing and MSL1 reflow compatibility up to 260 °C. Thermal design relies on its 1.1 K/W R_thJC, requiring copper area ≥6 cm² on FR4 PCB for rated 136 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage for 12 V automotive systems with margin against load-dump transients
R_DS(on) max @ V_GS=10 V	6.4 mΩ - enables ≤3.2 W conduction loss at 50 A, critical for thermally constrained motor drivers
I_D continuous @ T_C=25 °C	50 A - limited by bondwire; supports high-current solenoid and pump drivers without external heatsink
E_AS	250 mJ - ensures robustness against inductive switching surges in relay and actuator circuits
Q_g	50–68 nC - determines gate driver power requirement and switching speed in PWM applications
R_thJC	1.1 K/W - defines minimum heatsink interface performance needed to maintain T_j < 175 °C
V_GS(th)	1.2–2.0 V - guarantees turn-on with standard 3.3 V or 5 V logic outputs, eliminating gate driver ICs

Pinout & Package

IPD50N03S2L06ATMA1 is housed in PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal conduction. The leadframe design supports high-current flow and mechanical reliability under thermal cycling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense resistor in high-side switch configurations
Pin 2 (Gate)	Control input	Logic-level compatible; requires <1 µA leakage current and 6–8 nC Q_gs for clean turn-on
Pin 3 (Drain)	Power output / high-side connection	Exposed metal pad; must be soldered to ≥6 cm² copper pour for thermal management and current handling

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit passes single-pulse E_AS = 250 mJ test-ensures field reliability in inductive loads
Logic-level gate drive	V_GS(th) range (1.2–2.0 V) allows direct MCU GPIO control without external level shifters
Green package	Lead-free, RoHS-compliant PG-TO252-3-11 with MSL1 rating for lead-free reflow assembly
Ultra-low R_DS(on)	5.1 mΩ typ. @ V_GS=10 V reduces I²R losses in high-duty-cycle DC-DC converters

Applications

Automotive Body Control Module (BCM)

Industrial 12 V DC Motor Driver

Use Scenario: Switching power to door locks, window lifts, and mirror actuators in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: High-side load switch controlling up to 50 A peak current with integrated reverse polarity protection.

Use Value: 6.4 mΩ R_DS(on) limits voltage drop to <320 mV at 50 A, preserving battery voltage margin during cold-cranking.

Use Scenario: H-bridge half-bridge leg in conveyor belt and valve actuation systems.

IC Role / Device Role / Timing Role: Low-side switching element with fast t_f = 15 ns and Q_gd = 16–27 nC for efficient PWM commutation.

Use Value: 250 mJ avalanche rating absorbs flyback energy from 200 mH inductive loads without snubber networks.

Onboard Charger (OBC) Input Stage

48 V Mild Hybrid DC-DC Converter

Use Scenario: Primary-side synchronous rectifier in bidirectional AC/DC front-end stage.

IC Role / Device Role / Timing Role: Logic-level N-channel MOSFET used in active clamp or auxiliary power supply rail.

Use Value: V_GS(th) stability over –40 °C to +150 °C ensures reliable start-up in extreme ambient conditions.

Use Scenario: High-frequency buck switch in 48 V–12 V bi-directional converter for regenerative braking.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with low Q_g/R_DS(on) ratio.

Use Value: 1.1 K/W R_thJC enables >90% efficiency at 30 A output with minimal heatsink volume.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N3LLH6	R_DS(on) = 5.5 mΩ @ 10 V; Q_g = 72 nC; same TO252-3 package	Higher gate charge increases driver loss; slightly lower R_DS(on) improves conduction efficiency	Prefer when minimizing conduction loss dominates over switching loss in <50 kHz applications
IRLR024NPBF	R_DS(on) = 27 mΩ @ 10 V; Q_g = 21 nC; TO252-3, non-AEC-Q101	Lower gate charge enables faster switching but higher R_DS(on) raises conduction loss significantly	Select only for cost-sensitive non-automotive designs where 50 A rating is not required

Compared with STL120N3LLH6 and IRLR024NPBF, IPD50N03S2L06ATMA1 offers optimal balance of low R_DS(on), moderate Q_g, and AEC-Q101 compliance-making it uniquely suitable for automotive-grade 12 V high-current switching where reliability and thermal headroom are critical.

Availability

IPD50N03S2L06ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, onboard chargers, and 48 V mild hybrid DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for IPD50N03S2L06ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12 V–48 V systems.

FAQ

Is IPD50N03S2L06ATMA1 suitable for high-frequency PWM applications above 100 kHz?

Yes-it supports switching frequencies up to 200 kHz due to its low gate charge (Q_g = 50–68 nC) and fast switching times (t_r = 30 ns, t_f = 15 ns). However, thermal design must account for increased switching losses; use of ≥6 cm² PCB copper and forced airflow is recommended above 100 kHz at full 50 A load.

What is the maximum safe operating temperature for continuous operation?

The device is rated for continuous operation from –55 °C to +175 °C junction temperature. At T_j = 175 °C, R_DS(on) rises to ~12 mΩ (per Fig. 9), limiting usable current to ~35 A at V_GS = 10 V. Derating curves on page 4 of the datasheet define safe operating area boundaries for voltage/current combinations.

Does the integrated body diode support synchronous rectification?

Yes-the device features a fast, low-V_SD body diode (V_SD = 0.9–1.3 V at 50 A, T_j = 25 °C) with t_rr = 40 ns and Q_rr = 50 nC. This enables use in synchronous buck topologies, though external Schottky diodes may be preferred for lowest forward drop in high-efficiency designs.

Can IPD50N03S2L06ATMA1 replace older OptiMOS® 1st generation parts like IPD50N03S2-07?

Yes-IPD50N03S2L06ATMA1 is a direct upgrade with lower R_DS(on) (6.4 mΩ vs. 7.5 mΩ), improved avalanche ruggedness (250 mJ vs. 200 mJ), and tighter V_GS(th) distribution. Pinout, package, and footprint are identical, enabling drop-in replacement without layout changes.

IPD50N03S2L06ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50N03S2L06ATMA1 FAQ

1.How can I place an order for IPD50N03S2L06ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N03S2L06ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N03S2L06ATMA1 reliable?

The price and inventory of IPD50N03S2L06ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N03S2L06ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N03S2L06ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N03S2L06ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N03S2L06ATMA1?

IPD50N03S2L06ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N03S2L06ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N03S2L06ATMA1?

For technical support, including IPD50N03S2L06ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N03S2L06ATMA1 requirements.

6.How does Aetrix verify that IPD50N03S2L06ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N03S2L06ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N03S2L06ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N03S2L06ATMA1?

All IPD50N03S2L06ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N03S2L06ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N03S2L06ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N03S2L06ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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