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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50N04S308ATMA1

Name: IPD50N04S308ATMA1
Brand: Infineon Technologies
SKU: IPD50N04S308ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N04S308ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N04S308ATMA1.pdf

Description:: IPD50N04 - 20V-40V N-CHANNEL AUT

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Product details

Overview

IPD50N04S308ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified Power MOSFET in PG-TO252-3-11 package, rated for 40 V V_DS, 7.5 mΩ R_DS(on) max at 10 V V_GS, and 50 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, AEC-Q101 qualification, and operates up to 175 °C - deployed in automotive body control modules for high-side load switching.

For engineers reviewing the IPD50N04S308ATMA1 datasheet, IPD50N04S308ATMA1 pinout, IPD50N04S308ATMA1 application, or IPD50N04S308ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (111 mJ), gate charge profile (Q_g = 27–35 nC), and thermal resistance (R_thJC = 2.2 K/W) for thermally constrained PCB layouts.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in DC-DC converters and motor drivers. Its 5.9 mΩ typical R_DS(on) at 10 V V_GS and 50 A I_D enables high-efficiency 12 V automotive power distribution, while its 115 pF typical Crss supports controlled dV/dt during hard-switching.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 50 A and 25 °C, with 30 ns reverse recovery time and 32 nC Q_rr, making it suitable for synchronous rectification and freewheeling in H-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) max	7.5 mΩ at V_GS = 10 V, I_D = 50 A - Enables ≤3.75 W conduction loss at full rated current, critical for thermal management in sealed ECUs.
I_D cont	50 A at T_C = 25 °C - Supported by bondwire-limited current rating; derates to 49 A at 100 °C case temperature.
E_AS	111 mJ single-pulse avalanche energy - Confirmed robustness against inductive switching surges in solenoid and relay drive circuits.
Q_g	27–35 nC - Determines gate driver power requirement and switching speed; enables <25 ns total switching transition with 3.5 Ω gate resistor.
R_thJC	2.2 K/W - Junction-to-case thermal resistance allows direct heatsinking via PCB copper pour or clip-frame mounting.
t_r/t_f	7 ns / 6 ns - Fast rise/fall times reduce switching losses in PWM-controlled lighting and fan drivers operating up to 100 kHz.

Pinout & Package

IPD50N04S308ATMA1 is housed in PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal conduction. The three terminals are arranged in standard DPAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; threshold voltage 2.1–4.0 V ensures reliable turn-on with standard microcontroller GPIOs.
Pin 2 (Drain)	High-side power output	Exposed copper tab - must be soldered to ≥6 cm² PCB copper area for thermal performance; electrically connected to drain.
Pin 3 (Source)	Return path reference	Provides low-inductance source return; ties to ground plane or low-side switch node in half-bridge topologies.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit subjected to single-pulse inductive avalanche stress at I_D = 50 A, ensuring field reliability in inductive load switching.
Green RoHS-compliant package	Halogen-free, lead-free PG-TO252-3-11 meets ELV Directive and supports automated reflow up to 260 °C peak.
Optimized gate charge profile	Q_gs = 10–14 nC and Q_gd = 7–12 nC enable precise Miller plateau control and reduced EMI in high-frequency switching.
Integrated body diode	V_SD = 0.9–1.3 V at 50 A enables efficient freewheeling without external diode in DC motor H-bridges.

Applications

Automotive Body Control Module

12 V DC-DC Converter Primary Switch

Use Scenario: High-side power switching for HVAC blower motors and seat heater circuits in modern vehicle platforms.

IC Role / Device Role / Timing Role: N-channel MOSFET used as high-side load switch with external level-shifting gate driver.

Use Value: 7.5 mΩ R_DS(on) minimizes resistive heating at 30–50 A loads, enabling compact PCB design without forced air cooling.

Use Scenario: Primary-side synchronous rectifier in 12 V input, 5 V/20 A buck converter for infotainment power supply.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous buck topology operating at 250 kHz.

Use Value: 30 ns t_rr and 32 nC Q_rr reduce reverse recovery loss and cross-conduction risk during dead-time transitions.

Electric Power Steering (EPS) Motor Driver

Industrial PLC Output Stage

Use Scenario: Half-bridge leg in three-phase inverter driving 24 V EPS assist motor with peak currents >40 A.

IC Role / Device Role / Timing Role: Low-side switch in phase-leg configuration; paired with complementary high-side MOSFET.

Use Value: 175 °C maximum junction temperature and 2.2 K/W R_thJC support sustained operation under high ambient and load conditions.

Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules driving 24 V solenoids and indicators.

IC Role / Device Role / Timing Role: Load switch with integrated protection; driven directly from FPGA I/O bank.

Use Value: AEC-Q101 qualification provides extended lifetime and failure-rate predictability beyond industrial-grade alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N4LF6AG	R_DS(on) = 5.2 mΩ typ at 10 V, but only AEC-Q100 qualified (not Q101); higher Q_g (42 nC).	Lacks full AEC-Q101 stress validation; less suitable for safety-critical body electronics.	Prefer when lower R_DS(on) outweighs qualification rigor and gate drive capability permits higher Q_g.
IRF3205PBF	Legacy TO-220 package; R_DS(on) = 8.0 mΩ min; no AEC qualification; 150 °C T_j max.	Not automotive-qualified; unsuitable for production vehicles due to thermal and reliability constraints.	Only for legacy industrial prototyping where qualification and thermal performance are non-critical.

Compared with STL130N4LF6AG and IRF3205PBF, IPD50N04S308ATMA1 delivers verified AEC-Q101 compliance, superior thermal resistance (2.2 vs. ≥3.5 K/W), and tighter R_DS(on) distribution - essential for zero-defect automotive manufacturing and long-term field reliability.

Availability

IPD50N04S308ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPD50N04S308ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

This device belongs to the OptiMOS®-T family, engineered specifically for high-current, high-reliability automotive power switching - emphasizing low R_DS(on), robust avalanche capability, and AEC-Q101 compliance for under-hood deployment.

FAQ

Is IPD50N04S308ATMA1 pin-compatible with IPD50N04S3-08?

Yes - IPD50N04S308ATMA1 is the tape-and-reel packaged version of the same die and PG-TO252-3-11 footprint as IPD50N04S3-08. Both share identical pinout, electrical specifications, and thermal characteristics; only packaging format (reel vs. tray) differs per ordering code.

What is the maximum gate-source voltage rating?

The absolute maximum V_GS is ±20 V. Operation above +12 V or below −5 V is not recommended for long-term reliability; gate drive should be clamped to +10 V/−5 V in production designs to avoid oxide stress and threshold shift over lifetime.

Does this MOSFET require a gate resistor for automotive applications?

Yes - a series gate resistor (typically 3.5–10 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. Without it, parasitic oscillation can cause shoot-through in bridge configurations and exceed safe operating area limits during turn-on.

Can IPD50N04S308ATMA1 be used in linear mode (as a pass transistor)?

No - this device is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability: at V_DS = 10 V, maximum continuous current drops to ~12 A due to thermal runaway risk; it lacks SOA-rated linear operation like dedicated pass transistors.

IPD50N04S308ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50N04S308ATMA1 FAQ

1.How can I place an order for IPD50N04S308ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N04S308ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N04S308ATMA1 reliable?

The price and inventory of IPD50N04S308ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N04S308ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N04S308ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N04S308ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N04S308ATMA1?

IPD50N04S308ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N04S308ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N04S308ATMA1?

For technical support, including IPD50N04S308ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N04S308ATMA1 requirements.

6.How does Aetrix verify that IPD50N04S308ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N04S308ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N04S308ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N04S308ATMA1?

All IPD50N04S308ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N04S308ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N04S308ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N04S308ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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