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Infineon Technologies IPD50N04S309ATMA1

Part No.:
IPD50N04S309ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD50N04S309ATMA1.pdf
Description:
MOSFET N-CH 40V 50A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,338

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Product details

Overview

IPD50N04S309ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified OptiMOS™-T power MOSFET in PG-TO252-3-11 package, rated for 40 V VDS, 9 mΩ RDS(on) at 10 V VGS, and 50 A continuous drain current at TC = 25 °C. It delivers high-current switching in engine control units, DC-DC converters, and motor drivers under harsh thermal conditions.

For engineers reviewing the IPD50N04S309ATMA1 datasheet, IPD50N04S309ATMA1 pinout, IPD50N04S309ATMA1 application, or IPD50N04S309ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, 140 mJ single-pulse avalanche energy, and integrated body diode with 30 ns reverse recovery time.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 20–26 nC total gate charge supports efficient high-frequency PWM operation up to 100 kHz.

The device integrates a fast-recovery body diode (trr = 30 ns, Qrr = 32 nC) and is fully characterized for unclamped inductive switching (UIS), with 100% avalanche testing ensuring ruggedness in load-dump and inductive turn-off transients.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V battery rail applications including start-stop and load-dump scenarios
RDS(on) max9 mΩ at VGS = 10 V, ID = 50 A - Enables <1.5 W conduction loss at 40 A, critical for thermally constrained PCB layouts
ID cont50 A at TC = 25 °C - Supported by 2.4 K/W junction-to-case thermal resistance for direct heatsink mounting
EAS140 mJ at ID = 25 A - Confirmed single-pulse avalanche capability for inductive load switching without external snubbers
trr30 ns - Fast body diode recovery minimizes shoot-through risk and switching loss in synchronous rectification
Qg20–26 nC - Enables gate drive with standard 1 A peak drivers at 50–100 kHz switching frequencies
Tj max175 °C - Rated for under-hood environments including transmission control modules and EPS systems

Pinout & Package

IPD50N04S309ATMA1 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged in standard DPAK orientation: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputAccepts 0–10 V logic-level signals; 8–11 nC Qgs ensures fast turn-on with minimal Miller effect
Pin 2 (Drain)High-side switch nodeExposed copper tab electrically connected to drain; provides primary thermal path to PCB copper area
Pin 3 (Source)Power return referenceCommon source connection for gate driver return and current sensing; low-inductance layout essential for EMI control

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and UIS
MSL1 reflow ratingWithstands peak solder temperatures up to 260 °C without delamination or parameter shift
100% avalanche testedEach unit verified for 140 mJ single-pulse energy handling-no screening lot sampling
Green RoHS-compliant packageHalogen-free, lead-free construction compliant with EU Directive 2011/65/EU and JESD204B
Optimized Ciss/Coss ratio1350–1750 pF input capacitance with 720–940 pF output capacitance enables stable gate drive in high dv/dt environments

Applications

Engine Control Unit (ECU) Injector DriverAutomotive DC-DC Converter Primary Switch

Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems operating at 12 V nominal with ±20 % battery variation.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current with precise on-time resolution down to 10 µs.

Use Value: 9 mΩ RDS(on) reduces coil heating and improves fuel metering accuracy; 175 °C rating ensures reliability during extended idle-stop cycles.

Use Scenario: Primary-side synchronous rectifier in 12 V to 5 V/3.3 V buck converter powering ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–500 kHz with tight duty-cycle control.

Use Value: 30 ns trr and low Qrr minimize dead-time losses and enable >95 % efficiency at full load.

Electric Power Steering (EPS) Motor Phase SwitchBody Control Module (BCM) Load Driver

Use Scenario: Half-bridge phase leg in 12 V brushed or BLDC motor drives for steering assist, subject to high surge currents and vibration.

IC Role / Device Role / Timing Role: High-current, high-ruggedness switch handling bidirectional motor current up to 50 A peak.

Use Value: 140 mJ EAS and 200 A pulsed rating protect against inductive kickback during emergency torque cut-off events.

Use Scenario: Driving resistive and inductive loads (headlights, relays, solenoids) in centralized BCMs with PWM dimming and diagnostics.

IC Role / Device Role / Timing Role: Smart high-side or low-side load switch with overcurrent and thermal foldback protection.

Use Value: Integrated body diode eliminates need for external freewheeling diodes; AEC-Q101 qualification ensures field longevity beyond 15-year vehicle life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL130N4LF6AG40 V, 1.3 mΩ RDS(on) at 10 V, but only rated to 150 °C Tj and not AEC-Q101 qualifiedSuitable for industrial motor drives; lacks automotive stress validation and high-temp enduranceSelect only if AEC-Q101 and 175 °C operation are not required
IRF3709ZCPBF30 V VDS, 10.5 mΩ RDS(on), non-automotive grade, MSL3 onlyLimited to 12 V accessory circuits with no load-dump immunity or under-hood thermal marginUse only in non-safety-critical cabin applications with controlled ambient conditions

Compared with STL130N4LF6AG and IRF3709ZCPBF, IPD50N04S309ATMA1 uniquely combines AEC-Q101 qualification, 175 °C operation, and 100% avalanche testing-making it the only choice for safety-relevant powertrain switching where failure modes must be bounded.

Availability

IPD50N04S309ATMA1 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across multi-year production programs.

Supply support for IPD50N04S309ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line-designed specifically for high-current, high-temperature automotive power switching with emphasis on avalanche ruggedness and AEC-Q101 compliance.

FAQ

Is IPD50N04S309ATMA1 pin-compatible with earlier IPD50N04S3-09 revisions?

Yes-IPD50N04S309ATMA1 is the tape-and-reel packaged version of the same die and package as IPD50N04S3-09. Electrical specifications, pinout, thermal characteristics, and marking (3N0409) are identical; only packaging format differs (reel vs. tray).

What is the recommended PCB layout for optimal thermal performance?

Mount the device on a minimum 6 cm² copper area connected directly to the drain tab using ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch). Use FR4 1.5 mm thick board in vertical orientation; this achieves RthJA = 40 K/W per datasheet condition.

Does the body diode support synchronous rectification in buck converters?

Yes-the body diode has trr = 30 ns and Qrr = 32 nC at IF = 50 A, enabling use in synchronous buck topologies up to 500 kHz. However, external Schottky diodes may still be preferred for ultra-low VSD (<0.5 V) requirements.

Can IPD50N04S309ATMA1 be driven directly by a 3.3 V microcontroller GPIO?

No-its gate threshold range is 2.1–4.0 V, but RDS(on) is only guaranteed ≤9 mΩ at VGS ≥ 10 V. A dedicated gate driver (e.g., IRS2007) or level-shifting buffer is required for full enhancement and low-loss operation.

IPD50N04S309ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1750 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
63W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-11

IPD50N04S309ATMA1 FAQ

1.How can I place an order for IPD50N04S309ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N04S309ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N04S309ATMA1 reliable?

The price and inventory of IPD50N04S309ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N04S309ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N04S309ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N04S309ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N04S309ATMA1?

IPD50N04S309ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N04S309ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N04S309ATMA1?

For technical support, including IPD50N04S309ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N04S309ATMA1 requirements.

6.How does Aetrix verify that IPD50N04S309ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N04S309ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N04S309ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N04S309ATMA1?

All IPD50N04S309ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N04S309ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N04S309ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N04S309ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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