Infineon Technologies IPD50N04S4L08ATMA1

Overview

IPD50N04S4L08ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-313 package, rated for 40 V V_DS, 7.3 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 175 °C maximum junction temperature and 100% single-pulse avalanche tested. It serves as a high-current, low-R_DS(on) main switch in automotive DC-DC converters and motor control H-bridges.

For engineers reviewing the IPD50N04S4L08ATMA1 datasheet, IPD50N04S4L08ATMA1 pinout, IPD50N04S4L08ATMA1 application, or IPD50N04S4L08ATMA1 equivalent, key selection criteria include its 7.3 mΩ on-resistance at 10 V gate drive, 50 A continuous drain current capability at T_C = 25 °C, AEC qualification for automotive use, and integrated body diode with 34 ns reverse recovery time.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V/5 V logic-level compatibility while maintaining noise immunity, and its 23–30 nC total gate charge supports efficient PWM operation up to several hundred kHz.

The device integrates a fast-recovery body diode (t_rr = 34 ns, Q_rr = 27 nC) and is characterized for thermal resistance R_thJC = 3.3 K/W, enabling high-power density designs when mounted on PCBs with ≥6 cm² copper area. Avalanche ruggedness (E_AS = 55 mJ at I_D = 25 A) supports inductive load switching without external snubbers.

Key Specifications

Pinout & Package

IPD50N04S4L08ATMA1 uses the PG-TO252-3-313 surface-mount package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and is MSL1-rated for lead-free reflow up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IRF540NPBF and STL220N4F7AG, IPD50N04S4L08ATMA1 offers balanced performance: lower R_DS(on) than IRF540NPBF with full automotive qualification, and lower Q_g than STL220N4F7AG for easier gate drive integration-making it optimal for mid-power automotive switches requiring ruggedness and thermal margin.

Availability

IPD50N04S4L08ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, electric power steering motor drivers, and starter solenoid interfaces requiring stable component supply across extended product lifecycles.

Supply support for IPD50N04S4L08ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power switching applications including motor control, DC-DC conversion, and load management.

FAQ

What is the maximum allowable gate-source voltage for IPD50N04S4L08ATMA1?

The absolute maximum gate-source voltage is +20 V and –16 V, as specified in the datasheet's "Maximum ratings" table. Exceeding +20 V risks permanent gate oxide damage, while negative voltage beyond –16 V may cause gate leakage or threshold shift. Recommended operating range is 0–10 V for standard switching and 0–4.5 V for logic-level drive.

Does IPD50N04S4L08ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For typical 12 V automotive PWM at 20–100 kHz, a 3.3–10 Ω resistor is recommended based on gate charge (23–30 nC) and driver capability. Lower values improve switching speed but increase EMI; higher values reduce ringing at the cost of increased switching loss.

Can IPD50N04S4L08ATMA1 be used in parallel configurations?

Yes, but with strict layout and thermal symmetry: matched gate drive paths, identical source inductance, and uniform heatsinking are mandatory. The positive temperature coefficient of R_DS(on) (see Fig. 8) supports current sharing, but dynamic imbalance during switching requires careful gate loop design and possibly individual gate resistors.

Is the drain tab electrically isolated from the PCB mounting pad?

No-the drain (Pin 2 / Tab) is electrically connected to the internal die drain and must be soldered to a PCB copper pour that is either floating or referenced to system drain potential. It is not insulated; using insulating thermal pads or pastes requires verification of dielectric integrity and thermal resistance impact.