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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50N06S214ATMA1

Name: IPD50N06S214ATMA1
Brand: Infineon Technologies
SKU: IPD50N06S214ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N06S214ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N06S214ATMA1.pdf

Description:: MOSFET N-CH 55V 50A TO252-3

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Product details

Overview

IPD50N06S214ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified Power MOSFET in PG-TO252-3-11 package, rated for 55 V V_DS, 50 A continuous drain current at T_C = 25 °C, and ultra-low 14.4 mΩ max R_DS(on). It operates up to 175 °C, is 100% avalanche tested, and used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPD50N06S214ATMA1 datasheet, IPD50N06S214ATMA1 pinout, IPD50N06S214ATMA1 application, or IPD50N06S214ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, thermal resistance (R_thJC = 1.1 K/W), avalanche energy (E_AS = 240 mJ), diode forward voltage (V_SD = 1.3 V @ 50 A), and AEC-Q101 qualification status.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while its 167 pF reverse transfer capacitance (C_rss) and 39–52 nC total gate charge support fast, controlled switching with minimal Miller-induced shoot-through risk.

The integrated body diode features soft recovery (t_rr = 45 ns, Q_rr = 74 nC) and supports bidirectional current handling up to 50 A continuous, making it suitable for synchronous rectification and H-bridge motor drive topologies where reverse conduction and commutation stress are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 42 V automotive supply rails and transient overvoltage tolerance.
R_DS(on) max	14.4 mΩ @ V_GS = 10 V, I_D = 32 A - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements.
I_D cont	50 A @ T_C = 25 °C - Sustains high-current loads in starter relays, fuel pump drivers, and solenoid controls.
E_AS	240 mJ @ I_D = 50 A - Withstands single-pulse inductive energy without failure in unclamped inductive switching.
R_thJC	1.1 K/W - Allows direct thermal path to PCB copper or heatsink, supporting >100 W power dissipation with minimal junction rise.
V_GS(th)	2.1–4.0 V - Ensures reliable turn-on with standard microcontroller GPIOs and avoids false triggering near ground noise.
Q_g	39–52 nC - Determines gate driver current demand; enables <100 ns switching transitions with 0.5 A driver capability.

Pinout & Package

PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 0–10 V logic-level signal; requires <52 nC charge for full enhancement; sensitive to ESD.
Pin 2 (Drain)	Main current output terminal	Internally connected to exposed metal tab; must be soldered to ≥6 cm² copper pour for thermal performance.
Pin 3 (Source)	Reference node for gate drive and current return	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including temperature cycling, humidity bias, and mechanical shock per JESD22.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at production test-ensures field reliability in inductive load switching.
Ultra-low R_DS(on)	10.8 mΩ typical at 10 V drive reduces I²R losses by >30% vs. legacy 20 mΩ MOSFETs in 12 V battery systems.
Integrated body diode	V_SD = 1.3 V @ 50 A, t_rr = 45 ns - Enables efficient freewheeling in half-bridge configurations without external Schottky.
MSL1 reflow rating	Rated for peak reflow up to 260 °C - compatible with standard lead-free PCB assembly processes without moisture sensitivity concerns.

Applications

Engine Control Unit (ECU) Injector Driver

Automotive HVAC Blower Motor Control

Use Scenario: High-side switching of 12 V fuel injectors with PWM duty cycles up to 95% and 10 kHz switching frequency.

IC Role / Device Role / Timing Role: Power switch delivering precise current pulses to solenoid-based injectors; handles repetitive avalanche during coil de-energization.

Use Value: 14.4 mΩ R_DS(on) minimizes self-heating during extended idle operation; 175 °C rating ensures stability under hood ambient up to 125 °C.

Use Scenario: Low-side drive of brushed DC blower motors (20–40 A) in climate control systems with regenerative braking via PWM.

IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET enabling active freewheeling and reverse current recirculation during PWM off-time.

Use Value: Integrated diode with 45 ns t_rr and 74 nC Q_rr suppresses voltage spikes and EMI during commutation, eliminating need for external snubber.

12 V–48 V DC-DC Converter Primary Switch

Electric Power Steering (EPS) Phase Leg

Use Scenario: Synchronous buck primary switch in dual-battery architecture converters delivering 150 W at >95% efficiency.

IC Role / Device Role / Timing Role: High-frequency (200–500 kHz) hard-switched power transistor with low Q_g/C_oss ratio for minimized switching loss.

Use Value: 39–52 nC Q_g and 464 pF C_oss enable fast, low-loss transitions; R_thJC = 1.1 K/W supports compact heatsinking.

Use Scenario: Half-bridge leg in three-phase inverter driving 300–500 W brushless motors in column-assist EPS modules.

IC Role / Device Role / Timing Role: Low-side switch managing phase current up to 50 A RMS with short-circuit protection response <2 µs.

Use Value: 240 mJ E_AS withstands motor stall events; AEC-Q101 qualification ensures functional safety compliance per ISO 26262 ASIL-B.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N6LF8AG	R_DS(on) = 12.5 mΩ typ., Q_g = 55 nC, same PG-TO252 package, AEC-Q101 qualified	Lower R_DS(on) improves conduction loss but higher Q_g increases gate drive power at >200 kHz	Prefer for static-heavy loads (e.g., solenoids); avoid in high-frequency DC-DC where switching loss dominates.
IRF1404ZLPBF	R_DS(on) = 20 mΩ max, no AEC-Q101 certification, TO-220AB package, R_thJC = 1.5 K/W	Larger footprint, higher thermal resistance, and non-automotive qualification limit use to industrial/non-safety-critical systems	Acceptable for cost-sensitive 12 V industrial motor drives but not for under-hood automotive deployment.

Compared with STL120N6LF8AG and IRF1404ZLPBF, IPD50N06S214ATMA1 offers optimal balance of low R_DS(on), moderate Q_g, AEC-Q101 compliance, and DPAK thermal performance-making it preferred for space-constrained, thermally demanding automotive power stages.

Availability

IPD50N06S214ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drives, and electric power steering systems requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for IPD50N06S214ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers focused on electrification and digitalization.

This device belongs to the OptiMOS® 2nd generation automotive power transistor family, engineered specifically for high-current, high-temperature switching in 12 V and 42 V automotive subsystems with stringent reliability and safety requirements.

FAQ

Is IPD50N06S214ATMA1 suitable for high-frequency switching above 500 kHz?

No-its 52 nC max gate charge and 167 pF Crss result in increased switching losses beyond 500 kHz. It is optimized for 20–200 kHz operation in automotive DC-DC and motor drives. For >500 kHz, consider OptiMOS™ 5 or CoolMOS™ C7 devices with lower Q_g/C_oss.

What is the maximum allowable PCB copper area for thermal performance?

The datasheet specifies 6 cm² of 70 µm thick copper on FR4 for R_thJA = 50 K/W. Larger areas yield diminishing returns; exceeding 10 cm² provides <5% additional thermal improvement. Thermal vias under the drain pad are recommended to enhance vertical heat transfer.

Does the body diode support continuous reverse conduction in H-bridge configurations?

Yes-the device is rated for 50 A continuous diode forward current (I_S) at T_C = 25 °C and 200 A pulsed. Its soft-recovery characteristics (Q_rr = 74 nC, t_rr = 45 ns) minimize voltage overshoot during commutation in bidirectional motor drive topologies.

Can IPD50N06S214ATMA1 replace older IPD50N06S2-12 in existing designs?

Yes-both share identical PG-TO252-3-11 package, pinout, and thermal design. The -14 variant offers 14.4 mΩ max R_DS(on) vs. 12.5 mΩ for the -12, so verify conduction loss margin and gate drive capability remain sufficient; no layout change is required.

IPD50N06S214ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.4mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1485 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50N06S214ATMA1 FAQ

1.How can I place an order for IPD50N06S214ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N06S214ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N06S214ATMA1 reliable?

The price and inventory of IPD50N06S214ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N06S214ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N06S214ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N06S214ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N06S214ATMA1?

IPD50N06S214ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N06S214ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N06S214ATMA1?

For technical support, including IPD50N06S214ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N06S214ATMA1 requirements.

6.How does Aetrix verify that IPD50N06S214ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N06S214ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N06S214ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N06S214ATMA1?

All IPD50N06S214ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N06S214ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N06S214ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N06S214ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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