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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50N06S2L13ATMA1

Name: IPD50N06S2L13ATMA1
Brand: Infineon Technologies
SKU: IPD50N06S2L13ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N06S2L13ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N06S2L13ATMA1.pdf

Description:: MOSFET N-CH 55V 50A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD50N06S2L13ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It features a 55 V drain-source breakdown voltage, 10.2 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 34 A, 175 °C maximum junction temperature, AEC-Q101 qualification, and PG-TO252-3-11 surface-mount package. It delivers high-current capability (50 A continuous) with ultra-low conduction loss in motor control and DC-DC converter primary-side switches.

For engineers reviewing the IPD50N06S2L13ATMA1 datasheet, IPD50N06S2L13ATMA1 pinout, IPD50N06S2L13ATMA1 application, or IPD50N06S2L13ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (240 mJ), thermal resistance (R_thJC = 1.1 K/W), diode forward voltage (0.9–1.3 V), and AEC-Q101 compliance for automotive-grade reliability.

Technical Context

This OptiMOS® power transistor uses trench-gate technology to achieve low R_DS(on) and fast switching performance. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, while its 100% avalanche-tested construction ensures robustness under inductive load switching.

The device integrates a co-packaged body diode with 52 ns reverse recovery time and 99 nC Q_rr, supporting synchronous rectification and freewheeling in half-bridge topologies. Thermal design is enabled by its 1.1 K/W junction-to-case resistance and compatibility with standard PCB copper area cooling (50 K/W with 6 cm² drain pad).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 48 V nominal bus systems with 15 % margin for transients
R_DS(on) max @ 10 V	12.7 mΩ - enables ≤0.64 W conduction loss at 50 A, critical for thermal management
R_DS(on) max @ 4.5 V	16.7 mΩ - ensures usable on-resistance with 3.3 V MCU GPIO drive
E_AS	240 mJ - withstands single-pulse inductive energy without failure in motor drives
Q_g	69 nC max - determines gate driver current requirement (~1.4 A peak for 50 ns rise)
t_r/t_f	29 ns / 12 ns - enables >500 kHz switching in SMPS with low switching loss
T_j max	+175 °C - allows operation in under-hood automotive environments without derating
I_D cont	50 A @ T_C = 25 °C - rated for high-current loads with external heatsinking

Pinout & Package

IPD50N06S2L13ATMA1 is housed in a PG-TO252-3-11 (DPAK) thermally enhanced surface-mount package with exposed drain pad for low thermal resistance. The package complies with MSL1 reflow profile (peak 260 °C) and is lead-free per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (n-channel)	Reference node for gate drive; connects to low-side return path
Pin 2 (Gate)	Control input	Receives logic-level voltage (1.2–2.0 V threshold); requires <100 nF local decoupling
Pin 3 (Drain)	Main current output	Exposed copper pad - must be soldered to ≥6 cm² PCB copper for R_thJA = 50 K/W

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, EPS, and lighting modules
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver IC in 3.3 V systems
100% avalanche tested	Guarantees single-pulse ruggedness up to 240 mJ - no screening failures in production
Ultra-low R_DS(on)	10.2 mΩ @ 10 V enables >96 % efficiency in 48 V/50 A buck converters at 100 kHz
Green package	Lead-free, halogen-free PG-TO252-3-11 compliant with JEDEC J-STD-020 and RoHS

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 12–48 V brushed DC motors in electric power steering (EPS) and HVAC actuators.

IC Role / Device Role / Timing Role: High-side or low-side switch in H-bridge configuration; handles bidirectional 50 A pulsed current.

Use Value: 175 °C rating and AEC-Q101 qualification ensure reliability in under-hood thermal cycling; 240 mJ E_AS prevents failure during stall events.

Use Scenario: Primary-side switch in isolated 48 V to 12 V flyback or forward converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with synchronous rectification support via integrated diode.

Use Value: 12.7 mΩ R_DS(on) reduces conduction loss below 0.32 W at 40 A, improving full-load efficiency by ~1.2 % vs. comparable 20 mΩ devices.

On-Board Charger (OBC) Input Stage

Energy Storage System (ESS) Contactors

Use Scenario: AC-DC front-end switching in bi-directional OBCs for EVs, handling 6.6 kW input stages.

IC Role / Device Role / Timing Role: PFC boost switch or isolation stage switch; operates with interleaved gate drive for thermal distribution.

Use Value: Low Q_g (69 nC) and fast t_r/t_f enable high-frequency PFC operation with minimal driver loss; 1.1 K/W R_thJC supports forced-air cooling.

Use Scenario: Solid-state main contactor replacement in 48–800 V battery disconnect units for grid-scale ESS.

IC Role / Device Role / Timing Role: Bidirectional blocking switch replacing mechanical relays; controlled via isolated gate driver.

Use Value: Avalanche ruggedness (240 mJ) and 55 V V_DS allow safe interruption of inductive battery currents; 50 A continuous rating supports 100 A system peak with derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N5LF6AG	R_DS(on) = 13.5 mΩ @ 10 V; Q_g = 72 nC; same PG-TO252 package	Slightly higher conduction loss; identical AEC-Q101 grade and 175 °C rating	Preferred where ST's ecosystem or dual sourcing is required; minor efficiency trade-off
IRLR024NPBF	R_DS(on) = 27 mΩ @ 10 V; lower voltage rating (55 V same); TO-220AB package	Larger footprint, higher thermal resistance (R_thJC = 2.5 K/W), no AEC-Q101	Only suitable for non-automotive industrial use with ample heatsinking; not drop-in

Compared with STL130N5LF6AG, IPD50N06S2L13ATMA1 offers 0.8 mΩ lower R_DS(on) and 3 nC lower Q_g, improving conduction and switching efficiency. Versus IRLR024NPBF, it provides AEC-Q101 qualification, 1.4× lower R_DS(on), and 2.3× better thermal resistance - essential for space-constrained automotive designs.

Availability

IPD50N06S2L13ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, on-board chargers, and energy storage system contactors requiring stable component supply across multi-year production cycles.

Supply support for IPD50N06S2L13ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2L logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive subsystems and industrial power conversion where low gate drive voltage and ruggedness are mandatory.

FAQ

Is IPD50N06S2L13ATMA1 pin-compatible with IPD50N06S2L-13?

Yes - IPD50N06S2L13ATMA1 is the tape-and-reel packaged variant of the same die and package as IPD50N06S2L-13. Both share identical pinout (PG-TO252-3-11), electrical specifications, thermal characteristics, and marking "PN06L13". The suffix "ATMA1" denotes Infineon's standard reel packaging for automated SMT assembly.

What is the maximum recommended gate resistor for 500 kHz switching?

For 500 kHz operation with 50 A load, a 3.6 Ω gate resistor is validated in Infineon's ANPS071E. This value balances switching speed (t_r/t_f ≈ 29/12 ns) and gate driver stress. Lower values risk overshoot; higher values increase switching losses beyond 1.2 W at 500 kHz.

Does the integrated body diode support synchronous rectification?

Yes - the co-packaged body diode has t_rr = 52 ns and Q_rr = 99 nC at 100 A/µs di/dt, enabling use in synchronous rectifier configurations. However, external Schottky diodes are preferred for <100 kHz operation due to lower V_SD (0.9–1.3 V) versus typical 0.45 V Schottky drops.

Can this MOSFET replace IRFZ44N in existing designs?

No - although both are N-channel TO-220/TO252 MOSFETs, IRFZ44N has 28 mΩ R_DS(on), no AEC-Q101 rating, and 150 °C T_j max. IPD50N06S2L13ATMA1 offers superior specs but requires layout review for thermal pad connection and gate drive stability due to lower threshold and higher dV/dt immunity.

IPD50N06S2L13ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.7mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50N06S2L13ATMA1 FAQ

1.How can I place an order for IPD50N06S2L13ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N06S2L13ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N06S2L13ATMA1 reliable?

The price and inventory of IPD50N06S2L13ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N06S2L13ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N06S2L13ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N06S2L13ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N06S2L13ATMA1?

IPD50N06S2L13ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N06S2L13ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N06S2L13ATMA1?

For technical support, including IPD50N06S2L13ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N06S2L13ATMA1 requirements.

6.How does Aetrix verify that IPD50N06S2L13ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N06S2L13ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N06S2L13ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N06S2L13ATMA1?

All IPD50N06S2L13ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N06S2L13ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N06S2L13ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N06S2L13ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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