Infineon Technologies IPD50N06S409ATMA1

Overview

IPD50N06S409ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET rated for 60 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 9.0 mΩ maximum R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, operates up to 175 °C, and features 100% single-pulse avalanche testing-used in automotive DC-DC converters, motor control inverters, and high-efficiency power switches.

For engineers reviewing the IPD50N06S409ATMA1 datasheet, IPD50N06S409ATMA1 pinout, IPD50N06S409ATMA1 application, or IPD50N06S409ATMA1 equivalent, key selection criteria include its 2.1 K/W junction-to-case thermal resistance, 36–47 nC total gate charge, 87 mJ single-pulse avalanche energy, and PG-TO252-3-11 surface-mount package with integrated Schottky diode.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 5.6 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The device integrates a fast-recovery body diode with t_rr ≤ 45 ns and Q_rr ≤ 40 nC at 25 °C, enabling efficient synchronous rectification and freewheeling in half-bridge topologies without external diodes. Thermal design is anchored by its 2.1 K/W R_thJC and MSL1 reflow rating up to 260 °C.

Key Specifications

Pinout & Package

IPD50N06S409ATMA1 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged in standard DPAK orientation: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB180N04S403ATMA1, this part trades off voltage rating and package size for higher current density; versus IRFZ44NPBF, it delivers superior thermal performance, automotive qualification, and 3× lower R_DS(on)-critical for compact, high-efficiency designs.

Availability

IPD50N06S409ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, 12 V/24 V DC-DC conversion, and industrial solenoid control requiring stable component supply across production lifecycles.

Supply support for IPD50N06S409ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power MOSFET product line, engineered for high-efficiency, high-reliability switching in automotive and industrial 12 V/24 V power systems.

FAQ

Is IPD50N06S409ATMA1 suitable for high-frequency switching above 500 kHz?

No-its 36–47 nC total gate charge and 2911–3785 pF input capacitance limit practical hard-switching operation to ≤300 kHz in typical gate-driver configurations. For >500 kHz, consider devices with <20 nC Q_g and optimized RF packaging.

Does this MOSFET require a gate resistor for stability?

Yes-a 5–10 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 30–60 pF) and PCB inductance, especially in half-bridge configurations with fast dV/dt edges.

Can IPD50N06S409ATMA1 be used in high-side switch configurations?

Yes-with appropriate level-shifting gate drive (e.g., bootstrap or isolated driver), as its 60 V V_DS rating supports common 12 V/24 V high-side applications; however, source is not referenced to ground, requiring floating bias circuitry.

What is the maximum PCB copper area needed for thermal compliance at 50 A?

For continuous 50 A operation at T_C = 100 °C, a minimum of 6 cm² of 70 µm thick copper on FR4 (single layer, vertical orientation) is required per the datasheet's R_thJA = 40 K/W condition-undersized copper will exceed 175 °C junction temperature.