Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50N10S3L16ATMA2

Name: IPD50N10S3L16ATMA2
Brand: Infineon Technologies
SKU: IPD50N10S3L16ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD50N10S3L16ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N10S3L16ATMA2.pdf

Description:: MOSFET_(75V 120V(

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,625

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD50N10S3L16ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 100 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 12.5 mΩ max R_DS(on) at V_GS = 10 V. It delivers robust avalanche performance (330 mJ single-pulse E_AS) and operates up to 175 °C junction temperature, targeting high-reliability automotive power switching applications including motor control and DC-DC converters.

For engineers reviewing the IPD50N10S3L16ATMA2 datasheet, IPD50N10S3L16ATMA2 pinout, IPD50N10S3L16ATMA2 application, or IPD50N10S3L16ATMA2 equivalent, key selection criteria include its 100 V breakdown voltage, low 12.5–15.0 mΩ on-resistance at 10 V gate drive, 1.5 K/W junction-to-case thermal resistance, AEC-Q101 qualification, and integrated body diode with 97 ns t_rr and 178 nC Q_rr.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V and 24 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables reliable turn-on with standard logic-level drivers, while the 3.7 V gate plateau voltage supports stable Miller region control during switching transitions.

The MOSFET integrates a fast, soft-recovery body diode with 0.6–1.2 V forward voltage at 50 A and 25 °C, and exhibits defined safe operating area (SOA) up to 100 V × 50 A for single-pulse conditions. Thermal design is supported by validated R_thJC = 1.5 K/W and R_thJA = 40 K/W (with 6 cm² PCB copper area).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 24 V automotive battery systems with load dump margin.
R_DS(on) max	15.0 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at full rated current, reducing heatsink requirements.
I_D cont	50 A at T_C = 25 °C - Supports high-current motor phases or solenoid drivers without parallel devices.
E_AS	330 mJ single-pulse - Absorbs inductive energy during unclamped inductive switching, eliminating need for external snubbers in many designs.
t_rr	97 ns - Limits reverse recovery charge (Q_rr = 178 nC), reducing switching loss and voltage overshoot in hard-switched topologies.
T_j max	+175 °C - Rated for under-hood environments including engine control units and transmission modules.
R_thJC	1.5 K/W - Enables direct thermal path to heatsink or PCB copper, supporting compact thermal design with predictable junction temperature rise.

Pinout & Package

Package: PG-TO252-3-11 (DPAK variant with exposed drain pad, 3-pin surface-mount). Standard lead-free reflow profile compliant (MSL1, peak 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to ground or low-side return path; carries full load current and defines gate drive reference point.
Pin 2 (Gate)	Control input	Receives gate drive signal; requires ≤±20 V rating and low-impedance driver due to 64 nC total gate charge.
Pin 3 (Drain)	Power output / high-side switch node	Exposed copper pad on bottom surface; electrically and thermally connected to drain; must be soldered to large PCB copper area for thermal and current handling.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use per stress test requirements, enabling deployment in safety-critical power stages without additional qualification effort.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress, ensuring guaranteed ruggedness in inductive load switching without derating.
Low R_DS(on) × Q_g figure-of-merit	~780 mΩ·nC (15 mΩ × 52 nC typ) - Balances conduction and switching efficiency for high-frequency PWM in DC-DC and motor drives.
Soft-recovery body diode	t_rr = 97 ns, Q_rr = 178 nC - Reduces EMI and voltage spikes during freewheeling, improving system reliability in half-bridge configurations.
High-temperature operation	Rated for continuous operation at T_j = 175 °C - Supports placement near heat sources (e.g., engines, inverters) without thermal throttling.

Applications

Automotive Motor Control

12/24 V DC-DC Converters

Use Scenario: Driving brushed DC motors in HVAC actuators, power seats, and window lift modules.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and speed via PWM at 10–20 kHz.

Use Value: Low R_DS(on) minimizes I²R heating during stall conditions; avalanche rating handles back-EMF spikes without clamping diodes.

Use Scenario: Synchronous rectification in buck or boost converters powering ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET replacing Schottky diode to improve efficiency at 300–500 kHz switching frequencies.

Use Value: 12.5 mΩ R_DS(on) cuts conduction loss by >50% vs. typical 40 V Schottky; fast t_rr prevents cross-conduction in synchronous rectifier gate timing.

Engine Control Unit (ECU) Load Drivers

Electric Power Steering (EPS) Phase Legs

Use Scenario: Switching fuel injectors, ignition coils, and solenoid valves in engine management systems.

IC Role / Device Role / Timing Role: Low-side driver with fast turn-off (<34 ns total delay + fall time) to meet precise injection timing windows.

Use Value: 29 ns t_d(off) and 5 ns t_f enable sub-1 µs switching edges; 100 V rating accommodates 60 V load dump transients.

Use Scenario: Half-bridge phase leg in 3-phase EPS inverter delivering up to 10 kW assist torque.

IC Role / Device Role / Timing Role: Low-side switch in each phase leg, operated with dead-time controlled gate drivers to prevent shoot-through.

Use Value: 175 °C T_j rating allows operation adjacent to motor windings; 330 mJ E_AS withstands fault currents during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	100 V, 120 A, R_DS(on) = 5.5 mΩ @ 10 V; TO-263 package; higher current but larger footprint and higher Q_g (110 nC).	Better for high-current, lower-frequency (<50 kHz) applications where thermal mass dominates; less suitable for space-constrained PCBs.	Select when peak current exceeds 50 A and board area permits TO-263 mounting.
IRF540NPBF	100 V, 33 A, R_DS(on) = 44 mΩ @ 10 V; TO-220 package; no AEC-Q101 or avalanche testing; higher conduction loss.	Limited to non-automotive industrial or consumer use; unsuitable for under-hood or safety-critical functions.	Only consider for cost-sensitive, non-automotive prototypes where qualification and ruggedness are not required.

Compared with STL120N10F7 and IRF540NPBF, IPD50N10S3L16ATMA2 offers optimal balance of automotive qualification, thermal efficiency (1.5 K/W R_thJC), and compact DPAK packaging-making it preferred for volume automotive ECUs where reliability, size, and SOA integrity are jointly critical.

Availability

IPD50N10S3L16ATMA2 is available at Aetrix Electronics and suitable for automotive motor control, 12/24 V DC-DC conversion, and engine control unit load driving requiring stable component supply across production lifecycles.

Supply support for IPD50N10S3L16ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability automotive power switching-emphasizing AEC-Q101 compliance, rugged avalanche behavior, and thermally optimized packaging for under-hood deployment.

FAQ

Is IPD50N10S3L16ATMA2 pin-compatible with earlier IPD50N10S3L variants?

Yes-IPD50N10S3L16ATMA2 uses the same PG-TO252-3-11 package and identical pinout (Drain–Gate–Source) as prior revisions of the IPD50N10S3L series. The "16" suffix denotes the specific R_DS(on) grade (15 mΩ max), and the "ATMA2" tape-and-reel ordering code does not affect electrical or mechanical compatibility.

What is the maximum recommended gate resistor value for 20 kHz PWM switching?

For 20 kHz operation with minimal switching loss, a gate resistor of 3.5 Ω is validated in the datasheet (Rev. 1.4, p.3). Using ≥5 Ω increases turn-on/off times and may raise switching loss; values <2.5 Ω risk ringing and EMI without proper layout damping. Always verify with actual gate driver output impedance and PCB parasitics.

Does the body diode support synchronous rectification in continuous conduction mode (CCM)?

Yes-the body diode has characterized t_rr = 97 ns and Q_rr = 178 nC at 25 °C, enabling use in CCM synchronous buck converters up to ~300 kHz. However, its soft recovery reduces voltage overshoot, and thermal limits require careful attention to diode conduction time and junction temperature rise during light-load conditions.

Can IPD50N10S3L16ATMA2 replace a discrete 100 V SiC MOSFET in a 400 V bus application?

No-this device is rated for 100 V V_DS maximum and is not rated for 400 V systems. Attempting to use it on a 400 V bus violates absolute maximum ratings and will cause immediate catastrophic failure. It is designed exclusively for 12 V/24 V automotive subsystems with transient margins up to ~100 V, not high-voltage traction or onboard charger applications.

IPD50N10S3L16ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50N10S3L16ATMA2 FAQ

1.How can I place an order for IPD50N10S3L16ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N10S3L16ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N10S3L16ATMA2 reliable?

The price and inventory of IPD50N10S3L16ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N10S3L16ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD50N10S3L16ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N10S3L16ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N10S3L16ATMA2?

IPD50N10S3L16ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N10S3L16ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N10S3L16ATMA2?

For technical support, including IPD50N10S3L16ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N10S3L16ATMA2 requirements.

6.How does Aetrix verify that IPD50N10S3L16ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD50N10S3L16ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N10S3L16ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD50N10S3L16ATMA2?

All IPD50N10S3L16ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N10S3L16ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N10S3L16ATMA2 part is unused and in its original packaging.

Return procedure for IPD50N10S3L16ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.