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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50N12S3L15ATMA1

Name: IPD50N12S3L15ATMA1
Brand: Infineon Technologies
SKU: IPD50N12S3L15ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N12S3L15ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N12S3L15ATMA1.pdf

Description:: MOSFET N-CHANNEL_100+

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Product details

Overview

IPD50N12S3L15ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 120 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 15 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested for automotive load dump and inductive switching robustness.

For engineers reviewing the IPD50N12S3L15ATMA1 datasheet, IPD50N12S3L15ATMA1 pinout, IPD50N12S3L15ATMA1 application, or IPD50N12S3L15ATMA1 equivalent, key selection criteria include its 15 mΩ on-resistance at 10 V gate drive, 200 A pulsed drain capability, integrated body diode with 97 ns t_rr, MSL1 reflow compatibility, and automotive-grade thermal and reliability validation.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables robust TTL/CMOS-level drive, while the 44–57 nC total gate charge supports efficient high-frequency PWM control in DC-DC converters and motor drivers.

The MOSFET integrates a fast-recovery body diode (Q_rr = 178 nC, t_rr = 97 ns) and exhibits stable R_DS(on) over temperature (13–15 mΩ at 25 °C, rising to ~30 mΩ at 175 °C), enabling predictable thermal design in engine control units and battery disconnect switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Withstands full 12 V automotive system transients including load dump up to ISO 7637-2 Pulse 5a.
R_DS(on) max	15 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements in space-constrained modules.
I_D cont	50 A @ T_C = 25 °C - Supports high-current solenoid, pump, and fan drives without parallel devices.
E_AS	330 mJ @ I_D = 25 A - Guarantees single-pulse avalanche ruggedness for inductive turn-off in starter relays and fuel injectors.
t_rr	97 ns - Minimizes reverse recovery loss and EMI in synchronous rectification and H-bridge motor control.
Q_g	44–57 nC - Allows clean 100 kHz+ switching with standard gate drivers (e.g., 1 A peak output).
T_j max	175 °C - Certified for under-hood applications including transmission control and ADAS power stages.

Pinout & Package

Package: PG-TO252-3-11 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; 1.7 V typical V_GS(th) ensures reliable turn-on with microcontroller GPIO.
Pin 2 (D)	Drain	Main high-side power path; electrically connected to exposed copper tab for low-inductance, high-current routing and thermal conduction to PCB.
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to ground or low-side switch node in half-bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use per stress test conditions including HTGB, HTRB, and temperature cycling - required for ECU, BCM, and ADAS power stages.
MSL1 rating	Rated for peak reflow soldering up to 260 °C - eliminates moisture sensitivity concerns during SMT assembly.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at I_AS = 50 A - ensures field reliability in inductive load switching without external snubbers.
Green (RoHS-compliant)	Lead-free, halogen-free construction - meets global automotive environmental compliance mandates including ELV and IMDS reporting.
Thermal resistance R_thJC	1.5 K/W - enables >80 W power dissipation with minimal ΔT between junction and heatsink when mounted on 6 cm² copper area.

Applications

Engine Control Unit (ECU) Injector Driver

Automotive HVAC Blower Motor Control

Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side power switch with precise 1–2 ms pulse-width control and fast turn-off to limit fuel metering error.

Use Value: 97 ns t_rr and 15 mΩ R_DS(on) reduce switching loss and thermal rise during repetitive 100 Hz pulsing, improving injector lifetime and fuel accuracy.

Use Scenario: PWM-controlled 12 V blower motor in climate control systems requiring variable speed and soft-start.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in 3-phase inverter topology driving brushless DC motors.

Use Value: 50 A continuous rating and 200 A pulsed capability support 300 W motor loads; integrated diode enables regenerative braking without external freewheeling components.

12 V Battery Disconnect Switch

Start-Stop System Solenoid Driver

Use Scenario: Isolation of auxiliary battery banks in dual-battery architectures during fault conditions or sleep mode.

IC Role / Device Role / Timing Role: High-side or low-side main power switch controlled by vehicle network (CAN/LIN) via gate driver IC.

Use Value: 330 mJ E_AS withstands inrush currents and cable inductance energy during hot-plug events, eliminating need for external TVS clamping.

Use Scenario: Driving starter solenoid coils in micro-hybrid start-stop systems where rapid engagement (<50 ms) is critical.

IC Role / Device Role / Timing Role: Low-side switch delivering 100–200 A peak pulses to solenoid windings during cranking.

Use Value: 200 A pulsed drain rating and 175 °C operation ensure reliable actuation even at elevated under-hood temperatures (>125 °C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	100 V V_DS, 120 A I_D, 4.5 mΩ R_DS(on) - higher current, lower voltage rating.	Better suited for 48 V mild-hybrid systems; insufficient for 12 V load-dump transients above 100 V.	Select only if system max V_DS ≤ 100 V and higher current density is prioritized over avalanche margin.
IRF540NPBF	100 V V_DS, 33 A I_D, 44 mΩ R_DS(on), non-automotive grade - no AEC-Q101, no avalanche test.	Limited to industrial or consumer applications; not qualified for automotive ECU or safety-critical functions.	Acceptable only for cost-sensitive non-automotive prototypes; lacks thermal, reliability, and transient robustness for production vehicles.

Compared with STL120N10F7 and IRF540NPBF, IPD50N12S3L15ATMA1 uniquely balances 120 V breakdown, AEC-Q101 compliance, and 15 mΩ on-resistance - making it the only option validated for 12 V automotive power switching where both voltage margin and thermal efficiency are mandatory.

Availability

IPD50N12S3L15ATMA1 is available at Aetrix Electronics and suitable for engine control units, HVAC motor drives, battery disconnect switches, and start-stop solenoid drivers requiring stable component supply across automotive production lifecycles.

Supply support for IPD50N12S3L15ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power switching - targeting ECU, body electronics, and electrified chassis subsystems.

FAQ

What is the maximum gate-source voltage rating for IPD50N12S3L15ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to 10 V for full enhancement and 0 V for turn-off, with transient spikes clamped below ±20 V using Zener diodes or gate driver protection circuits.

Does IPD50N12S3L15ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 kHz PWM at 50 A, a 3.5 Ω resistor is specified in the datasheet to achieve optimal switching speed and EMI balance. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses proportionally.

Can IPD50N12S3L15ATMA1 be used in high-side configuration?

Yes, but requires a floating gate driver capable of providing ≥10 V referenced to the drain potential. The device itself has no internal level-shifting circuitry. In high-side 12 V applications, bootstrap or isolated gate drivers (e.g., Infineon's 1EDN7512B) are necessary to maintain sufficient V_GS during conduction.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - its 97 ns reverse recovery time and 178 nC Q_rr enable efficient synchronous rectification in 12 V buck converters up to 500 kHz. However, forward voltage (0.6–1.2 V) is higher than Schottky alternatives, so conduction loss dominates at light loads; thermal derating must account for diode self-heating during continuous conduction mode.

IPD50N12S3L15ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50N12S3L15ATMA1 FAQ

1.How can I place an order for IPD50N12S3L15ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N12S3L15ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N12S3L15ATMA1 reliable?

The price and inventory of IPD50N12S3L15ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N12S3L15ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N12S3L15ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N12S3L15ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N12S3L15ATMA1?

IPD50N12S3L15ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N12S3L15ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N12S3L15ATMA1?

For technical support, including IPD50N12S3L15ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N12S3L15ATMA1 requirements.

6.How does Aetrix verify that IPD50N12S3L15ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N12S3L15ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N12S3L15ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N12S3L15ATMA1?

All IPD50N12S3L15ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N12S3L15ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N12S3L15ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N12S3L15ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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