Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50P03P4L11ATMA1

Name: IPD50P03P4L11ATMA1
Brand: Infineon Technologies
SKU: IPD50P03P4L11ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD50P03P4L11ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50P03P4L11ATMA1.pdf

Description:: MOSFET P-CH 30V 50A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,797

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD50P03P4L11ATMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET optimized for reverse battery protection in automotive and industrial power systems. It features V_DS = −30 V, R_DS(on) = 10.5 mΩ (max) at V_GS = −10 V and I_D = −50 A, 175 °C maximum junction temperature, AEC-Q101 qualification, and 100% single-pulse avalanche tested.

For engineers reviewing the IPD50P03P4L11ATMA1 datasheet, IPD50P03P4L11ATMA1 pinout, IPD50P03P4L11ATMA1 application, or IPD50P03P4L11ATMA1 equivalent, this device is selected for high-reliability DC power path control where low R_DS(on), robust avalanche capability, and logic-level gate drive compatibility are critical.

Technical Context

This MOSFET operates as a high-side reverse polarity protection switch with integrated body diode. Its −1.0 to −2.0 V gate threshold voltage enables reliable turn-on with standard 3.3 V or 5 V logic controllers, while its 2.6 K/W junction-to-case thermal resistance supports high-current operation on PCBs with minimal copper area.

The device uses OptiMOS™-P2 silicon technology to achieve low gate charge (Q_g = 42–55 nC) and fast switching (t_r = 3 ns, t_f = 14 ns), reducing conduction and switching losses in 12 V/24 V automotive battery circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V: Maximum reverse-battery voltage it blocks without breakdown.
R_DS(on) max	10.5 mΩ at V_GS = −10 V, I_D = −50 A: Enables ≤0.26 W conduction loss at full rated current.
I_D continuous	−50 A at T_C = 25 °C: Sustains high load currents with appropriate heatsinking.
E_AS	100 mJ (I_D = −25 A): Absorbs inductive energy during load dump or fault events.
Q_g	42–55 nC: Determines gate driver power requirement and switching speed trade-off.
T_j max	+175 °C: Supports operation in under-hood automotive environments without derating.
V_GS(th)	−1.0 to −2.0 V: Ensures full enhancement with 3.3 V microcontroller outputs.

Pinout & Package

Package: PG-TO252-3-11 (DPAK variant with 3 leads, exposed drain pad, standardized footprint per JEDEC TO-252).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of P-channel MOSFET	Connected to battery positive in reverse-protection configuration; reference node for gate drive.
Pin 2 (Gate)	Control input	Accepts logic-level voltage (≤−2 V) to fully enhance channel; requires no level-shifter.
Pin 3 (Drain)	Main current path output	Exposed copper pad; connects to load side; primary thermal path to PCB copper.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and body electronics per stress test requirements.
100% single-pulse avalanche tested	Each unit verified to withstand ≥100 mJ surge without parametric shift or failure.
Logic-level gate drive	V_GS(th) range (−1.0 to −2.0 V) ensures compatibility with 3.3 V/5 V MCU GPIOs.
MSL1 rating (260 °C peak reflow)	Supports lead-free SMT assembly without moisture sensitivity concerns.
Integrated body diode	V_SD = −1.0 to −1.3 V at −50 A enables freewheeling in inductive loads.

Applications

Automotive Reverse Battery Protection

Industrial 24 V Power Distribution

Use Scenario: Prevents damage when vehicle battery is connected with reversed polarity during service or jump-start.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active polarity guard in main power rail.

Use Value: Eliminates need for series Schottky diode, reducing voltage drop (≤30 mV vs. 300–400 mV) and heat generation at 50 A.

Use Scenario: Secures PLC I/O modules and sensor hubs against accidental reverse connection in factory automation cabinets.

IC Role / Device Role / Timing Role: Standalone reverse-polarity switch placed upstream of DC-DC converters and LDOs.

Use Value: Maintains >99.5% efficiency at full load due to ultra-low R_DS(on), avoiding thermal derating in confined enclosures.

12 V Telematics Power Management

Commercial Vehicle ECU Protection

Use Scenario: Protects GPS trackers and telematics gateways powered directly from vehicle battery with intermittent ignition cycles.

IC Role / Device Role / Timing Role: Always-on reverse-protection element enabling cold-cranking survival down to −40 °C.

Use Value: Operates reliably across −55 °C to +175 °C ambient, supporting extended temperature qualification for fleet management hardware.

Use Scenario: Shields engine control units in heavy-duty trucks from battery reversal during dual-battery jump-start procedures.

IC Role / Device Role / Timing Role: Avalanche-rugged MOSFET handling up to 200 A pulsed fault currents without latch-up.

Use Value: Withstands 100 mJ single-pulse avalanche energy, preventing catastrophic failure during real-world load-dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-battery protection applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD50P03P4L-11ATMA1	Same die, identical PG-TO252-3-11 package and marking; direct form-fit-function replacement.	No functional difference; same AEC-Q101 qualification and thermal specs.	Select when requiring exact traceability to Rev. 1.2 datasheet and Infineon's production lot controls.
IRF4905PBF	R_DS(on) = 20 mΩ (max) at −10 V; higher conduction loss; no AEC-Q101 or avalanche testing.	Suitable only for non-automotive industrial use with relaxed reliability requirements.	Choose only for cost-sensitive legacy designs where 175 °C operation and automotive qualification are not required.

Compared with IRF4905PBF, IPD50P03P4L11ATMA1 delivers 47% lower R_DS(on), guaranteed avalanche ruggedness, and automotive-grade reliability-making it essential for modern vehicle electronics where safety and longevity are mandated.

Availability

IPD50P03P4L11ATMA1 is available at Aetrix Electronics and suitable for automotive reverse battery protection, industrial 24 V power distribution, and commercial vehicle ECU protection requiring stable component supply and long-term lifecycle support.

Supply support for IPD50P03P4L11ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

This part belongs to the OptiMOS™-P2 P-channel MOSFET product line, engineered specifically for high-efficiency, high-reliability reverse polarity protection in automotive and harsh-environment power systems.

FAQ

What is the maximum safe operating temperature for IPD50P03P4L11ATMA1?

The device supports continuous operation up to +175 °C junction temperature, validated per AEC-Q101 stress testing. At case temperature T_C = 100 °C and V_GS = −10 V, its rated continuous drain current is −42 A. Derating curves in the datasheet confirm thermal stability under sustained load conditions.

Does IPD50P03P4L11ATMA1 require a gate resistor for automotive applications?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current during fast switching, especially in noisy automotive environments. The device's Q_g = 42–55 nC and low C_iss (2900–3770 pF) make it compatible with standard MCU GPIO drivers without external level shifters.

Can IPD50P03P4L11ATMA1 be used in parallel configurations?

Yes-its negative temperature coefficient for R_DS(on) (R_DS(on) increases with temperature) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors are required to ensure balanced dynamic current distribution across paralleled units.

Is the body diode suitable for freewheeling in inductive loads?

Yes-the integrated body diode has V_SD = −1.0 to −1.3 V at −50 A and t_rr = 35 ns, making it suitable for freewheeling in solenoid drivers and relay coils. For high-frequency or high-di/dt applications, an external Schottky diode may still be added to reduce recovery losses.

IPD50P03P4L11ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: +5V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50P03P4L11ATMA1 FAQ

1.How can I place an order for IPD50P03P4L11ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50P03P4L11ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50P03P4L11ATMA1 reliable?

The price and inventory of IPD50P03P4L11ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50P03P4L11ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50P03P4L11ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50P03P4L11ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50P03P4L11ATMA1?

IPD50P03P4L11ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50P03P4L11ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50P03P4L11ATMA1?

For technical support, including IPD50P03P4L11ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50P03P4L11ATMA1 requirements.

6.How does Aetrix verify that IPD50P03P4L11ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50P03P4L11ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50P03P4L11ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50P03P4L11ATMA1?

All IPD50P03P4L11ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50P03P4L11ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50P03P4L11ATMA1 part is unused and in its original packaging.

Return procedure for IPD50P03P4L11ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…