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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50P04P413ATMA1

Name: IPD50P04P413ATMA1
Brand: Infineon Technologies
SKU: IPD50P04P413ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50P04P413ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50P04P413ATMA1.pdf

Description:: MOSFET P-CH 40V 50A TO252-3

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Product details

Overview

IPD50P04P413ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -40 V V_DS, 12.6 mΩ R_DS(on) at -10 V V_GS and -50 A continuous drain current at T_C = 25 °C, qualified to AEC-Q101 and operating up to +175 °C - used in automotive high-side load switching and reverse polarity protection circuits.

For engineers reviewing the IPD50P04P413ATMA1 datasheet, IPD50P04P413ATMA1 pinout, IPD50P04P413ATMA1 application, or IPD50P04P413ATMA1 equivalent, key selection criteria include its 2.6 K/W R_thJC, 100% avalanche tested ruggedness, MSL1 reflow rating, integrated body diode with 39 ns t_rr, and PG-TO252-3-313 package thermal performance on 6 cm² PCB copper.

Technical Context

This device implements a trench-based OptiMOS®-P2 silicon structure optimized for low R_DS(on) × Q_g figure-of-merit in P-channel configurations. Its gate threshold voltage range of -2.0 V to -4.0 V ensures robust turn-on control under automotive battery voltage transients.

Designed for high-reliability automotive power management, it supports unidirectional high-side switching with integrated freewheeling diode (V_SD = -1.3 V at -50 A), and features 18 mJ single-pulse avalanche energy capability validated per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load-dump margin
R_DS(on)	12.6 mΩ max at V_GS = -10 V, I_D = -50 A - Enables <1.3 W conduction loss at full rated current
I_D (cont)	-50 A at T_C = 25 °C - Limited by bondwire; supports high-current solenoid and motor driver loads
E_AS	18 mJ - Confirmed single-pulse avalanche energy for inductive load switching reliability
t_rr	39 ns - Fast body diode recovery reduces switching losses in synchronous rectification
R_thJC	2.6 K/W - Enables efficient heat transfer from die to heatsink via exposed drain tab
Q_g	51 nC max - Determines gate drive power requirement for 100 kHz PWM operation

Pinout & Package

IPD50P04P413ATMA1 uses the PG-TO252-3-313 surface-mount package with exposed drain tab for thermal and electrical connection. The plastic body measures 6.5 mm × 6.2 mm × 2.3 mm, and the device is RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives negative gate drive relative to source; threshold range -2.0 V to -4.0 V enables direct microcontroller interface with level-shifting
Pin 2 / Tab (Drain)	Main power output / heat path	Exposed metal tab serves as both high-current drain terminal and primary thermal conduction path to PCB copper
Pin 3 (Source)	Reference node / return path	Connected to system ground or battery positive in high-side configuration; defines V_GS reference

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive temperature cycling (-40 °C to +175 °C), humidity, and mechanical shock per stress test plan
100% avalanche tested	Each unit subjected to single-pulse inductive switching stress at rated I_AS = -50 A and E_AS = 18 mJ
MSL1 peak reflow rating	Withstands 260 °C solder reflow profile without delamination or parameter shift
Integrated body diode	V_SD = -1.3 V at -50 A, t_rr = 39 ns - Eliminates need for external freewheeling diode in DC load switching
Green package	RoHS-compliant, halogen-free molding compound meeting IPC-J-STD-709B material restrictions

Applications

Automotive Reverse Polarity Protection

High-Side Battery Disconnect Switch

Use Scenario: Prevents damage to vehicle ECUs during incorrect battery jump-start or installation.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch between battery and downstream electronics.

Use Value: Withstands 18 mJ avalanche energy and operates reliably at 175 °C ambient, ensuring fail-safe protection under fault conditions.

Use Scenario: Enables controlled isolation of 12 V battery rail during key-off or fault conditions in ADAS modules.

IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (t_f = 28 ns) and low R_DS(on) to minimize standby loss.

Use Value: 12.6 mΩ on-resistance limits voltage drop to <0.63 V at 50 A, preserving system efficiency and thermal margin.

Engine Control Unit Power Distribution

Electric Power Steering (EPS) Motor Driver Stage

Use Scenario: Supplies power to fuel injector drivers and ignition coils with overcurrent and short-circuit resilience.

IC Role / Device Role / Timing Role: Robust P-channel switch handling pulsed 200 A avalanche currents during coil de-energization.

Use Value: 200 A pulsed drain rating and 2.6 K/W R_thJC allow transient overload handling without thermal runaway.

Use Scenario: Controls auxiliary power rails for EPS motor gate drivers and sensors in compact steering column assemblies.

IC Role / Device Role / Timing Role: High-reliability power switch operating continuously at 150 °C junction temperature in confined space.

Use Value: AEC-Q101 qualification and 175 °C max operating temperature ensure long-term stability in thermally constrained EPS housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 20 mΩ @ -10 V; no AEC-Q101 qualification; R_thJC = 3.0 K/W	Not suitable for automotive production; limited to industrial or prototyping use	Select only if AEC compliance is not required and higher conduction loss is acceptable
STP55P04FP	R_DS(on) = 14 mΩ @ -10 V; AEC-Q101 qualified; TO-220 package with higher R_thJC = 3.5 K/W	Requires through-hole mounting and larger heatsink area than SMD PG-TO252	Choose when board space allows through-hole assembly and thermal design accommodates lower power density

Compared with IRF4905PBF and STP55P04FP, IPD50P04P413ATMA1 delivers superior power density (12.6 mΩ in PG-TO252), guaranteed automotive qualification, and best-in-class thermal resistance - making it optimal for space-constrained, high-reliability 12 V/24 V automotive power nodes.

Availability

IPD50P04P413ATMA1 is available at Aetrix Electronics and suitable for automotive reverse polarity protection, high-side battery disconnect, and engine control unit power distribution requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IPD50P04P413ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in automotive power distribution networks where low R_DS(on), rugged avalanche capability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is +175 °C, and the device is fully specified for continuous operation across this range. Thermal design must ensure that steady-state T_j remains below this limit using the provided R_thJC = 2.6 K/W and PCB cooling area guidelines - particularly critical in engine bay or EPS module environments.

Is the body diode suitable for freewheeling in PWM-driven inductive loads?

Yes - the integrated body diode has a typical forward voltage of -1.0 V and reverse recovery time of 39 ns at -50 A, enabling efficient freewheeling in 12 V automotive solenoid and actuator drivers. Its Q_rr of 32 nC minimizes commutation loss during high-frequency switching.

Does this MOSFET require a gate resistor for automotive ESD protection?

No dedicated gate resistor is required for ESD protection, as the device incorporates internal gate protection structures. However, a 10–100 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast edge transitions in noisy automotive environments.

Can IPD50P04P413ATMA1 be used in parallel configurations for higher current handling?

Parallel operation is feasible due to its negative temperature coefficient of R_DS(on), which promotes current sharing. Designers must match layout symmetry, gate drive impedance, and thermal coupling; derating to ≤45 A per device is advised to maintain safe SOA margins under transient conditions.

IPD50P04P413ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3670 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD50P04P413ATMA1 FAQ

1.How can I place an order for IPD50P04P413ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50P04P413ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50P04P413ATMA1 reliable?

The price and inventory of IPD50P04P413ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50P04P413ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50P04P413ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50P04P413ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50P04P413ATMA1?

IPD50P04P413ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50P04P413ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50P04P413ATMA1?

For technical support, including IPD50P04P413ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50P04P413ATMA1 requirements.

6.How does Aetrix verify that IPD50P04P413ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50P04P413ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50P04P413ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50P04P413ATMA1?

All IPD50P04P413ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50P04P413ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50P04P413ATMA1 part is unused and in its original packaging.

Return procedure for IPD50P04P413ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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