Infineon Technologies IPD50P04P4L11ATMA1

Overview

IPD50P04P4L11ATMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET optimized for reverse battery protection in automotive and industrial power systems. It features a -40 V V_DS, 10.6 mΩ R_DS(on) at V_GS = -10 V and I_D = -50 A, 175 °C maximum junction temperature, AEC-Q101 qualification, and 100% single-pulse avalanche tested. Its PG-TO252-3-313 package supports high-current DC paths in 12 V/24 V vehicle electronics.

For engineers reviewing the IPD50P04P4L11ATMA1 datasheet, IPD50P04P4L11ATMA1 pinout, IPD50P04P4L11ATMA1 application, or IPD50P04P4L11ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = -1.2 to -2.2 V), low R_DS(on) at 4.5 V, thermal resistance (R_thJC = 2.6 K/W), and integrated body diode performance (V_SD = -1.0 to -1.3 V at -50 A).

Technical Context

This MOSFET operates as a high-side reverse polarity protection switch with gate-controlled blocking of negative supply transients. Its P-channel architecture eliminates need for charge pump circuitry, while the -1.7 V typical V_GS(th) ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs.

Designed for continuous conduction in harsh environments, it delivers 58 W power dissipation at T_C = 25 °C and sustains -50 A continuous drain current up to T_C = 100 °C. The 100% avalanche-tested construction enables robust handling of load dump and inductive kickback events in automotive ECUs and battery management modules.

Key Specifications

Pinout & Package

Package: PG-TO252-3-313 (DPAK), surface-mount, thermally enhanced with exposed drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse battery protection applications.

Compared with IRF4905PBF and STP55PF04, IPD50P04P4L11ATMA1 provides superior automotive readiness, lower gate threshold for 3.3 V compatibility, and guaranteed avalanche ruggedness-critical for safety-critical reverse protection where failure modes must be eliminated, not mitigated.

Availability

IPD50P04P4L11ATMA1 is available at Aetrix Electronics and suitable for automotive reverse battery protection, industrial 24 V power distribution, and EV charger safety isolation requiring stable component supply across multi-year production cycles.

Supply support for IPD50P04P4L11ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-P2 product line, engineered specifically for high-efficiency, high-reliability reverse polarity protection and high-side switching in automotive and industrial 12 V/24 V systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPD50P04P4L11ATMA1 supports -40 A continuous drain current at T_C = 100 °C with V_GS ≤ -6 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO252 package under natural convection conditions on standard FR4 PCBs.

Does this MOSFET require a gate resistor for safe switching in automotive applications?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current during fast transitions. While not strictly mandatory due to low Q_g (45–59 nC), it improves EMI performance and prevents overshoot when driven directly from MCU pins with low output impedance.

Can the integrated body diode handle continuous freewheeling current in an H-bridge configuration?

Yes-the device supports -50 A continuous forward current through its body diode at T_C = 25 °C, with V_SD = -1.0 to -1.3 V. However, diode conduction increases junction temperature; design must ensure T_j remains ≤175 °C under worst-case duty cycle and ambient conditions.

Is the PG-TO252-3-313 package compatible with standard DPAK footprint layouts?

Yes-PG-TO252-3-313 is Infineon's designation for the industry-standard DPAK (TO-252) package with 3 terminals and specific leadframe geometry. It uses identical PCB land pattern dimensions (7.0 × 6.5 mm body, 2.3 mm pin pitch) and is mechanically and thermally interchangeable with generic DPAK footprints.