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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R1K4CEBTMA1

Name: IPD50R1K4CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R1K4CEBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R1K4CEBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R1K4CEBTMA1.pdf

Description:: MOSFET N-CH 500V 3.1A TO252-3

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Product details

Overview

IPD50R1K4CEBTMA1 from Infineon Technologies is a 500 V, 1.4 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in DPAK (PG-TO252) package, rated for 4.8 A continuous drain current at T_C = 25°C and optimized for high-efficiency PFC and hard-switching SMPS stages in consumer lighting and adapter applications.

For engineers reviewing the IPD50R1K4CEBTMA1 datasheet, IPD50R1K4CEBTMA1 pinout, IPD50R1K4CEBTMA1 application, or IPD50R1K4CEBTMA1 equivalent, key selection criteria include its 8.2 nC total gate charge, 0.79 µJ E_oss at 400 V, 50 V/ns dv/dt ruggedness, and validated commutation robustness in resonant topologies - all critical for EMI-sensitive, cost-constrained AC-DC designs.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) of 11.48 Ω·nC and ultra-low E_oss, directly reducing switching losses in continuous conduction mode (CCM) PFC and quasi-resonant flyback converters. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.4 V) support stable operation with standard 12 V gate drivers.

Thermal performance is defined by R_thJC = 2.95 °C/W and R_thJA = 35–62 °C/W depending on PCB copper area, while diode characteristics - including 120 ns t_rr, 0.5 µC Q_rr, and 6.8 A I_rrm - are specified under 400 V reverse bias and 100 A/µs di/dt, confirming suitability for synchronous rectification and bidirectional switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	550 V - Ensures 50 V margin above 400 V DC-link in universal-input PFC, preventing avalanche stress during line surges.
R_DS(on) max	1.40 Ω @ T_j = 150°C - Defines conduction loss in high-temp operation; enables <1.5 W dissipation at 4.8 A ID.
Q_g typ	8.2 nC - Low gate drive energy reduces driver IC loading and allows use of compact SOT-23 gate drivers.
E_oss @ 400 V	0.79 µJ - Directly determines turn-off energy loss; enables >95% efficiency in QR flyback at 100 kHz.
dv/dt ruggedness	50 V/ns - Supports reliable operation in high-dV/dt environments like LLC resonant converters without false triggering.
t_rr	120 ns - Fast body diode recovery minimizes shoot-through risk and reduces snubber losses in half-bridge configurations.

Pinout & Package

IPD50R1K4CEBTMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source - confirmed per Infineon's official package outline and datasheet tab 3.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 0–13 V logic-level signal; 7 Ω internal gate resistance simplifies EMI filtering design.
Pin 2 (Drain)	High-voltage power input/output	Connected to DC-link or transformer primary; electrically tied to exposed copper pad for thermal conduction.
Pin 3 (Source)	Power return and reference node	Serves as local ground reference for gate driver; must be low-inductance path to minimize ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	11.48 Ω·nC - Enables higher switching frequency without compromising conduction loss, ideal for compact adapters.
High commutation ruggedness	49 mJ single-pulse avalanche energy - Withstands repetitive overvoltage transients in unregulated offline stages without derating.
Easy gate drive	V_GS(th) = 2.5–3.5 V and V_plateau = 5.4 V - Compatible with standard 5 V or 12 V controllers without level-shifting.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets IPC-J-STD-020 moisture sensitivity level (MSL) 1 for reflow compatibility.

Applications

LED Driver Power Stage

PC Silver Box PFC

Use Scenario: Constant-current LED driver operating from 85–265 VAC input with active PFC and buck-boost topology.

IC Role / Device Role / Timing Role: Main switch in boost PFC pre-regulator stage, switching at 65–100 kHz.

Use Value: 1.4 Ω R_DS(on) and 0.79 µJ E_oss reduce total losses below 2.1 W at 40 W output, enabling passive cooling.

Use Scenario: 300–500 W ATX power supply with continuous conduction mode (CCM) boost PFC front-end.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter, handling 400 V DC-link and 8.8 A pulsed current.

Use Value: 50 V/ns dv/dt rating and 49 mJ E_AS ensure reliable operation during line dips and surge events without snubber redesign.

LCD TV SMPS

USB-C PD Adapter

Use Scenario: 120–240 W open-frame SMPS powering LCD backlight and mainboard in flat-panel TVs.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback, operating up to 130 kHz with valley switching.

Use Value: 120 ns t_rr and low Q_rr (0.5 µC) suppress body-diode conduction loss, improving light-load efficiency by 1.8%.

Use Scenario: 65 W GaN-assisted USB-C PD adapter with hybrid DCM/QR control and 400 V bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver companion or auxiliary HV switch in hold-up capacitor charging circuit.

Use Value: 1.4 Ω R_DS(on) at 150°C ensures <1.1 W conduction loss at full load, supporting compact 30 mm × 30 mm PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD50R1K4CE	Same die, identical electrical specs, but marked "IPD50R1K4CE" without BTMA1 suffix; DPAK package, same PG-TO252 footprint.	No functional difference; BTMA1 denotes specific tape-and-reel packaging and traceability per Infineon's ordering code revision.	Select BTMA1 for full AEC-Q200-aligned traceability and production lot control in OEM programs.
IPU50R1K4CE	Identical silicon, but in IPAK (PG-TO251) package - same pinout (G-D-S), but different thermal pad geometry and mounting hole pattern.	Lower R_thJC (2.75 °C/W vs. 2.95 °C/W) supports slightly higher power density; requires PCB land pattern update.	Choose IPU50R1K4CE only when board redesign permits IPAK footprint and enhanced thermal performance is required.

Compared with IPD50R1K4CEBTMA1, the IPD50R1K4CE offers identical performance with simplified logistics, while IPU50R1K4CE trades minor package compatibility for improved thermal resistance - making BTMA1 optimal for drop-in replacement in existing DPAK-based designs requiring full traceability.

Availability

IPD50R1K4CEBTMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silver box PFC circuits, and LCD TV SMPS requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for IPD50R1K4CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CE family - engineered specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer lighting and adapter markets, balancing performance, ruggedness, and manufacturability.

FAQ

Is IPD50R1K4CEBTMA1 pin-compatible with older CoolMOS™ C3 or C7 series?

No. While all share DPAK packaging, IPD50R1K4CEBTMA1 has higher R_DS(on) (1.4 Ω) and lower Q_g (8.2 nC) than C3/C7 equivalents, resulting in different gate drive timing and SOA boundaries. Direct substitution requires validation of gate resistor value, snubber sizing, and thermal margin.

What is the maximum recommended gate resistor for hard-switching applications?

Infineon specifies R_G = 5.3 Ω in dynamic test conditions (V_DD = 400 V, I_D = 1.1 A). For 4.8 A continuous operation, a 10–15 Ω non-inductive resistor is recommended to limit peak gate current to <2 A while maintaining <30 ns fall time and minimizing EMI.

Does this MOSFET require a gate resistor on the source side for paralleling?

Yes. Per datasheet footnote, ferrite beads on individual gate lines or separate totem-pole drivers are recommended when paralleling multiple IPD50R1K4CEBTMA1 units to suppress oscillation and ensure current sharing - due to inherent parameter spread and layout-induced loop inductance imbalance.

Can IPD50R1K4CEBTMA1 replace a 600 V MOSFET in a 400 V DC-link design?

Yes, with qualification. Its 550 V V_DS rating provides 150 V margin above 400 V nominal bus, satisfying IEC 62368-1 transient requirements. However, its lower avalanche energy (49 mJ vs. typical 100+ mJ for 600 V parts) demands careful clamping network design to avoid single-event failure during overvoltage.

IPD50R1K4CEBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 900mA, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 178 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50R1K4CEBTMA1 FAQ

1.How can I place an order for IPD50R1K4CEBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R1K4CEBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R1K4CEBTMA1 reliable?

The price and inventory of IPD50R1K4CEBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R1K4CEBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R1K4CEBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R1K4CEBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R1K4CEBTMA1?

IPD50R1K4CEBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R1K4CEBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R1K4CEBTMA1?

For technical support, including IPD50R1K4CEBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R1K4CEBTMA1 requirements.

6.How does Aetrix verify that IPD50R1K4CEBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R1K4CEBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R1K4CEBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R1K4CEBTMA1?

All IPD50R1K4CEBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R1K4CEBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R1K4CEBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R1K4CEBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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