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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R280CEATMA1

Name: IPD50R280CEATMA1
Brand: Infineon Technologies
SKU: IPD50R280CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R280CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R280CEATMA1.pdf

Description:: MOSFET N-CH 500V 13A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD50R280CEATMA1 from Infineon Technologies is a 500 V, 0.28 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO252 (DPAK) package, rated for 18.1 A continuous drain current at T_C = 25°C. It delivers low conduction and switching losses (E_oss = 3.2 µJ @ 400 V), high commutation ruggedness (d_i/d_t = 500 A/µs), and gate drive simplicity-optimized for cost-sensitive PFC and hard-switching SMPS in lighting and adapter applications.

For engineers reviewing the IPD50R280CEATMA1 datasheet, IPD50R280CEATMA1 pinout, IPD50R280CEATMA1 application, or IPD50R280CEATMA1 equivalent, key selection criteria include its 500 V V_(BR)DSS, 32.6 nC total gate charge, 1.05 °C/W R_thJC, avalanche energy rating of 231 mJ, and DPAK thermal performance in compact consumer power supplies.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling high-voltage blocking with reduced specific on-resistance. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.3 V) support standard 10–15 V gate drivers without level-shifting, while low Q_gd/Q_g ratio (17.1/32.6 nC) ensures fast, controllable turn-off in hard-switched topologies.

The integrated body diode exhibits 230 ns reverse recovery time and 2.2 µC Q_rr at 400 V, supporting moderate-frequency resonant operation. Thermal design is anchored by 1.05 °C/W junction-to-case resistance and 62 °C/W junction-to-ambient rating under standard PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Sustains full mains-derived DC bus voltages (e.g., 400 V PFC output) with margin against transients.
R_DS(on),max	0.28 Ω @ T_j = 25°C - Enables <1.5 W conduction loss at 18.1 A, critical for thermally constrained DPAK layouts.
Q_g,typ	32.6 nC @ V_DD = 400 V - Determines gate driver current requirement (~1.6 A peak for 20 ns rise time).
E_oss	3.2 µJ @ 400 V - Directly impacts turn-off switching loss in hard-switched converters operating up to 100 kHz.
I_D,pulsed	42.9 A - Supports short-term overload and inrush current handling in AC-DC front-end stages.
R_thJC	1.05 °C/W - Defines maximum power dissipation limit (119 W at T_C = 25°C) for heatsink-limited designs.
d_i/d_t ruggedness	500 A/µs - Allows reliable operation in high-d_i/d_t environments like LLC resonant tank commutation.

Pinout & Package

IPD50R280CEATMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The three-terminal configuration supports high-current, low-inductance PCB layout in compact power stages.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to power ground or low-side switch source in half-bridge configurations.
Pin 2 (Gate)	Control electrode	Accepts 0–20 V logic-level gate signal; requires series resistor (typically 3.4 Ω) to damp ringing and control dV/dt.
Pin 3 (Drain)	Main current-carrying terminal	Connected to high-voltage DC bus (e.g., PFC output); electrically and thermally tied to exposed copper pad on PCB bottom side.

Key Features

Feature	Design Value
Extremely low FOM (R_DS(on) × Q_g)	0.28 Ω × 32.6 nC = 9.13 Ω·nC - Reduces combined conduction + switching loss vs. prior-generation SJ-MOSFETs.
High commutation ruggedness	500 A/µs d_i/d_t and 50 V/ns dv/dt - Enables robust operation in LLC and phase-shifted full-bridge without snubbers.
Easy gate drive compatibility	V_GS(th) = 2.5–3.5 V and V_plateau = 5.3 V - Works directly with standard 12 V PWM controllers and gate drivers.
Pb-free and halogen-free construction	RoHS-compliant plating and mold compound - Meets environmental compliance requirements for global consumer electronics.
Standard-grade qualification	Rated for T_j = –55 to +150°C - Suitable for industrial and commercial power supplies without extended temperature screening.

Applications

LED Driver Power Stage

PC Silver Box PFC Circuit

Use Scenario: Constant-current LED driver with active PFC front-end operating at 65–100 kHz in indoor lighting fixtures.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage, handling 400 V DC link and delivering 18 A average current.

Use Value: Low R_DS(on) minimizes conduction loss at full load; low E_oss maintains >95% efficiency across universal AC input range.

Use Scenario: Active PFC stage in ATX PC power supply, rectifying and boosting 90–264 V AC to regulated 400 V DC.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter, switching at 65 kHz.

Use Value: High d_i/d_t ruggedness prevents failure during line surges; DPAK package enables cost-effective double-sided PCB assembly.

LCD TV Backlight Inverter

USB-C PD Adapter Primary Switch

Use Scenario: Resonant half-bridge inverter driving CCFL or LED backlight, operating in soft-switching ZVS region.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge, conducting up to 42.9 A pulsed current during startup.

Use Value: Fast turn-off (t_f = 7.6 ns) and low Q_gd enable precise dead-time control; integrated diode supports ZVS transition.

Use Scenario: Primary-side switch in 65 W USB-C PD adapter using QR flyback topology with 90–264 V AC input.

IC Role / Device Role / Timing Role: Main power switch turning on/off at variable frequency up to 130 kHz, handling 500 V transient spikes.

Use Value: 500 V V_(BR)DSS provides margin against reflected voltage spikes; low Q_g reduces driver IC loading and improves light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 1.5 Ω R_DS(on), TO-220 package, higher Q_g (45 nC)	Higher conduction loss and larger footprint; suited for lower-power (<30 W) designs with heatsink availability.	Select when board space permits TO-220 and cost is primary constraint over efficiency.
IPP60R099C6	600 V, 0.099 Ω R_DS(on), TO-220FP package, higher price, higher Q_g (62 nC)	Lower R_DS(on) but higher gate drive demand; better for high-efficiency >100 W designs with forced cooling.	Select when system efficiency >96% is required and thermal management supports higher gate drive power.

Compared with STP5NK50ZFP and IPP60R099C6, IPD50R280CEATMA1 offers optimal balance of low R_DS(on), moderate Q_g, DPAK thermal performance, and cost-making it ideal for 30–65 W consumer power supplies where board area and BOM cost are tightly constrained.

Availability

IPD50R280CEATMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silver box PFC circuits, and USB-C PD adapter primary switches requiring stable component supply and consistent parametric performance across production lots.

Supply support for IPD50R280CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IPD50R280CEATMA1 belongs to the CoolMOS™ CE family-a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting power supplies where thermal density and BOM cost are critical design constraints.

FAQ

What is the maximum recommended gate resistor value for IPD50R280CEATMA1 in a 65 kHz PFC boost converter?

The datasheet specifies a 3.4 Ω gate resistor for dynamic characterization at 400 V and 5.2 A. For 65 kHz PFC operation, a 5–10 Ω resistor balances switching loss reduction and EMI control. Values above 15 Ω increase turn-on time excessively, risking shoot-through in bridge configurations and raising conduction loss due to prolonged linear region operation.

Can IPD50R280CEATMA1 be paralleled with identical units in a high-current PFC stage?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each gate line or individual totem-pole drivers per device, as explicitly recommended in the datasheet. Without such measures, unequal gate loop inductance causes dynamic current imbalance, leading to thermal runaway-even with matched R_DS(on) and layout symmetry.

Does the body diode of IPD50R280CEATMA1 support zero-voltage switching in LLC resonant converters?

Yes-the body diode's 230 ns t_rr and 17.5 A I_rrm allow reliable ZVS turn-on in LLC half-bridges operating up to 300 kHz, provided the dead time exceeds 3×t_rr and the resonant tank current fully commutates before gate drive reactivation. Its soft recovery characteristic minimizes voltage overshoot during reverse recovery.

Is IPD50R280CEATMA1 suitable for use in automotive under-hood applications?

No-it is qualified only for standard-grade (–55 to +150°C) industrial and consumer applications, not AEC-Q101 automotive qualification. Its packaging, test coverage, and process controls lack the extended reliability validation (e.g., HTGB, uHTRB, temperature cycling) required for under-hood deployment where ambient temperatures exceed 125°C and vibration/contamination stress is severe.

IPD50R280CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 4.2A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 32.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 773 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 119W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50R280CEATMA1 FAQ

1.How can I place an order for IPD50R280CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R280CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R280CEATMA1 reliable?

The price and inventory of IPD50R280CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R280CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R280CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R280CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R280CEATMA1?

IPD50R280CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R280CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R280CEATMA1?

For technical support, including IPD50R280CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R280CEATMA1 requirements.

6.How does Aetrix verify that IPD50R280CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R280CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R280CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R280CEATMA1?

All IPD50R280CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R280CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R280CEATMA1 part is unused and in its original packaging.

Return procedure for IPD50R280CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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