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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R280CEBTMA1

Name: IPD50R280CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R280CEBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R280CEBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R280CEBTMA1.pdf

Description:: MOSFET N-CH 500V 13A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD50R280CEBTMA1 from Infineon Technologies is a 500 V, 0.28 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency PFC and hard-switching SMPS stages in consumer lighting and adapter applications. It delivers 18.1 A continuous drain current at T_C = 25°C, 32.6 nC total gate charge, and 3.2 µJ output energy at 400 V.

For engineers reviewing the IPD50R280CEBTMA1 datasheet, IPD50R280CEBTMA1 pinout, IPD50R280CEBTMA1 application, or IPD50R280CEBTMA1 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit, high commutation ruggedness (500 A/µs di/dt), and robust 550 V V_DS rating at T_j,max, critical for reliable operation in 400 V DC-link resonant and PWM converters.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling significantly lower conduction and switching losses than planar MOSFETs at 500 V. Its gate threshold voltage of 2.5–3.5 V and plateau voltage of 5.3 V ensure stable turn-on under wide drive conditions while maintaining noise immunity.

The MOSFET integrates an intrinsic fast-recovery body diode with 230 ns reverse recovery time and 2.2 µC Q_rr at 400 V, supporting ZVS-capable topologies. Thermal resistance R_thJC is 1.05 °C/W, enabling high-power density designs when mounted on copper-clad PCBs with thermal vias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	550 V - Withstands transient overvoltage up to 550 V at maximum junction temperature, ensuring margin above 400 V DC-link rails.
R_DS(on) max	0.28 Ω @ T_j = 150°C - Enables low conduction loss in high-current PFC boost stages without forced cooling.
Q_g typ	32.6 nC - Reduces gate drive power and enables use of low-cost, low-current gate drivers in cost-sensitive adapters.
E_oss	3.2 µJ @ 400 V - Low stored output capacitance energy minimizes switching loss during hard-switched turn-off transitions.
I_D cont	18.1 A @ T_C = 25°C - Supports continuous operation up to 18 A with standard DPAK heatsinking on FR4 PCBs.
dV/dt ruggedness	50 V/ns - Ensures reliable operation in high-dV/dt environments such as LLC resonant converters without false triggering.
di/dt ruggedness	500 A/µs - Sustains rapid current reversal during synchronous rectification or freewheeling without latch-up.

Pinout & Package

IPD50R280CEBTMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal and electrical performance. The package features gull-wing leads compatible with standard reflow profiles and supports >100 W power dissipation with proper PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to power ground or low-side switch source in half-bridge configurations.
Pin 2 (Gate)	Control electrode	Receives gate drive signal; requires <3 Ω gate resistance for optimal switching speed and EMI control.
Pin 3 (Drain)	High-voltage power terminal	Connects to DC-link or transformer primary; electrically tied to exposed metal pad for thermal conduction and low-inductance return path.

Key Features

Feature	Design Value
Ultra-low FOM (R_DS(on) × Q_g)	8.6 Ω·nC - Delivers best-in-class efficiency for 500 V MOSFETs in 30–100 W lighting and adapter PFC stages.
High commutation ruggedness	500 A/µs di/dt capability - Enables reliable operation in high-frequency resonant converters without external snubbers.
Easy gate drive	3 V threshold and 5.3 V plateau - Compatible with standard 5 V and 12 V logic-level drivers without level-shifting circuitry.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets global environmental compliance requirements for consumer electronics.

Applications

LED Driver Power Supply

USB-C PD Adapter

Use Scenario: High-efficiency 65 W constant-voltage LED driver with active PFC and quasi-resonant flyback secondary.

IC Role / Device Role / Timing Role: Primary-side switching transistor in boost PFC stage operating at 65–100 kHz.

Use Value: 0.28 Ω R_DS(on) reduces conduction loss by >30% vs. legacy 500 V MOSFETs, enabling >94% PFC efficiency at full load.

Use Scenario: Compact 65 W USB-C Power Delivery adapter with integrated PFC + QR flyback controller.

IC Role / Device Role / Timing Role: Main switch in continuous-conduction-mode (CCM) PFC boost converter.

Use Value: 32.6 nC Q_g allows direct drive from low-power PFC controllers (e.g., ICE3PCS01G), eliminating external gate driver ICs.

LCD TV Backlight Inverter

Industrial AC-DC Module

Use Scenario: 120 W backlight inverter for 32-inch LCD TV using two-phase interleaved PFC.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage operating at 70 kHz with phase-shifted control.

Use Value: 550 V V_DS rating provides 10% margin over 400 V DC-link transients, improving long-term reliability in unregulated grid environments.

Use Scenario: DIN-rail mount 48 V/10 A industrial AC-DC module with universal input (85–265 VAC).

IC Role / Device Role / Timing Role: Primary switch in hard-switched forward converter with active clamp reset.

Use Value: 50 V/ns dV/dt ruggedness prevents spurious turn-on during high-slew-rate clamp transitions, eliminating need for negative gate bias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 0.95 Ω R_DS(on), 25 nC Q_g, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g eases drive but lacks CoolMOS™'s SJ efficiency	Select only if board space permits TO-220FP and thermal budget allows higher I²R loss.
IPP60R099C6	600 V, 0.099 Ω R_DS(on), 58 nC Q_g, TO-220 package	Lower R_DS(on) improves efficiency but higher Q_g demands stronger gate driver; 600 V rating exceeds requirement	Prefer for higher-power (>150 W) designs where gate drive capability and thermal headroom exist.

Compared with STP5NK50ZFP and IPP60R099C6, IPD50R280CEBTMA1 offers the optimal balance of low R_DS(on), moderate Q_g, and DPAK form factor-enabling compact, cost-effective 30–100 W PFC stages without sacrificing ruggedness or manufacturability.

Availability

IPD50R280CEBTMA1 is available at Aetrix Electronics and suitable for LED driver power supplies, USB-C PD adapters, and LCD TV backlight inverters requiring stable component supply and RoHS-compliant manufacturing.

Supply support for IPD50R280CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ CE family-a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting applications where price-performance ratio and ease of use are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 3.4 Ω for dynamic characterization. For reliable EMI control and overshoot suppression, a 5–10 Ω non-inductive gate resistor is recommended. Values above 15 Ω increase switching time and conduction loss; below 2 Ω risk ringing and shoot-through in bridge configurations.

Can IPD50R280CEBTMA1 be paralleled for higher current handling?

Yes-Infineon explicitly supports paralleling this device. Use individual ferrite beads (≥100 Ω impedance at 100 MHz) on each gate line and matched gate resistors to ensure current sharing. Avoid shared gate traces; maintain symmetrical layout and thermal coupling across devices.

Is the body diode suitable for synchronous rectification?

No-the intrinsic diode has 230 ns t_rr and 2.2 µC Q_rr, making it unsuitable for high-frequency synchronous rectification. It is designed for freewheeling and PFC boost diode emulation, not zero-voltage switching in SR-Flyback or LLC secondaries.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA curve limits continuous ID to ~9.5 A at V_DS = 200 V and ~4.5 A at V_DS = 400 V (10 ms pulse). Derating follows the 1.05 °C/W R_thJC; sustained operation above 100°C case requires active cooling or reduced duty cycle to avoid thermal runaway.

IPD50R280CEBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 4.2A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 32.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 773 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50R280CEBTMA1 FAQ

1.How can I place an order for IPD50R280CEBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R280CEBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R280CEBTMA1 reliable?

The price and inventory of IPD50R280CEBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R280CEBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R280CEBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R280CEBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R280CEBTMA1?

IPD50R280CEBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R280CEBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R280CEBTMA1?

For technical support, including IPD50R280CEBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R280CEBTMA1 requirements.

6.How does Aetrix verify that IPD50R280CEBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R280CEBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R280CEBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R280CEBTMA1?

All IPD50R280CEBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R280CEBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R280CEBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R280CEBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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