Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R2K0CEBTMA1

Name: IPD50R2K0CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R2K0CEBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD50R2K0CEBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R2K0CEBTMA1.pdf

Description:: CONSUMER

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,848

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD50R2K0CEBTMA1 from Infineon Technologies is a 500 V, 2.0 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency PFC and hard-switching SMPS in consumer lighting and adapter applications. It delivers 3.6 A continuous drain current at T_C = 25°C, 6 nC total gate charge, and 0.62 µJ output switching energy at 400 V.

For engineers reviewing the IPD50R2K0CEBTMA1 datasheet, IPD50R2K0CEBTMA1 pinout, IPD50R2K0CEBTMA1 application, or IPD50R2K0CEBTMA1 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit, high commutation ruggedness (500 A/µs di/dt), and robust 550 V V_DS rating for 400 V DC-link operation.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling significantly reduced conduction and switching losses versus planar MOSFETs. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (~5.4 V) support standard 12–15 V gate drive while maintaining noise immunity.

The MOSFET integrates an ultra-fast body diode with 110 ns reverse recovery time and 0.35 µC Q_rr, enabling reliable operation in discontinuous conduction mode (DCM) PFC and resonant topologies without external diode snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	550 V - Withstands 400 V DC-link with 25% margin for surge and ringing
R_DS(on) max	2.00 Ω @ T_j = 150°C - Enables low conduction loss in 3.6 A continuous PFC boost stages
Q_g typ	6 nC - Reduces gate driver power and enables efficient 100+ kHz switching
E_oss @ 400 V	0.62 µJ - Low stored output capacitance energy minimizes turn-on loss in hard-switched converters
I_D,pulse	6.1 A - Supports peak current handling during startup and overload in adapter designs
dV/dt ruggedness	50 V/ns - Ensures reliable operation under fast transient voltage stress in compact layouts
di/dt ruggedness	500 A/µs - Allows stable commutation in high-frequency resonant and DCM-PFC circuits

Pinout & Package

IPD50R2K0CEBTMA1 is housed in a surface-mount DPAK (PG-TO252) package with exposed drain pad for thermal performance. The package measures 6.7 mm × 6.2 mm × 2.3 mm and is RoHS-compliant with halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; low 7 Ω gate resistance simplifies driver design and reduces ringing risk
Pin 2 (Drain)	High-voltage power terminal	Connected to DC-link or transformer primary; electrically tied to exposed copper pad for heatsinking
Pin 3 (Source)	Power return and reference	Serves as local ground reference for gate drive and current sensing; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
Ultra-low FOM (R_DS(on) × Q_g)	12 Ω·nC - Delivers best-in-class efficiency for cost-sensitive 30–100 W lighting and adapter platforms
High commutation ruggedness	500 A/µs di/dt capability - Eliminates need for external diode snubbers in DCM-PFC and LLC designs
Robust avalanche rating	34 mJ single-pulse E_AS - Withstands repetitive overvoltage transients without derating in unregulated inputs
Pb-free & halogen-free	Meets JEDEC MSL Level 1 and RoHS Directive 2011/65/EU - Supports lead-free reflow and green manufacturing compliance

Applications

LED Driver Power Stage

AC-DC Adapter Primary Switch

Use Scenario: High-efficiency isolated flyback converter powering indoor LED luminaires with universal AC input (90–264 V_AC).

IC Role / Device Role / Timing Role: Primary-side switching transistor operating in quasi-resonant (QR) or DCM mode at 65–130 kHz.

Use Value: 2.0 Ω R_DS(on) and 0.62 µJ E_oss reduce conduction and turn-on losses, enabling >90% efficiency at full load without active cooling.

Use Scenario: Compact 36 W laptop adapter with integrated PFC + LLC topology and minimal PCB area.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage, followed by LLC half-bridge primary switch.

Use Value: 6 nC Q_g and 50 V/ns dV/dt rating allow stable gate drive with low-cost SOT-23 drivers and reduce EMI filter size.

PC Silver Box PSU

LCD TV Backlight Inverter

Use Scenario: 500 W ATX power supply main switch in forward or LLC resonant converter for desktop PCs.

IC Role / Device Role / Timing Role: Primary-side power switch in asymmetric half-bridge configuration, switching at 100–200 kHz.

Use Value: 550 V V_DS rating provides headroom for 450 V DC-link surges; 3.6 A I_D supports 12 V/30 A rail delivery with margin.

Use Scenario: Cold-cathode fluorescent lamp (CCFL) inverter for 32-inch LCD TV, requiring high-voltage AC output (1.2 kV) at 50–70 kHz.

IC Role / Device Role / Timing Role: Half-bridge switch driving resonant tank with high dv/dt stress during zero-voltage switching transitions.

Use Value: 500 A/µs di/dt ruggedness and 110 ns t_rr ensure clean commutation and prevent shoot-through in high-frequency resonant operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD50R2K0CEXTMA1	Same die, enhanced reliability screening per AEC-Q101 Grade 1; identical R_DS(on), Q_g, and SOA	Qualified for automotive cabin electronics (e.g., infotainment power supplies); not required for consumer lighting	Select when extended temperature range (-40°C to 150°C) and automotive qualification are mandatory
STP5NK50ZFP	500 V, 1.2 Ω R_DS(on), 12 nC Q_g; older planar Zener-protected SuperFET, higher switching loss	Higher E_oss (1.4 µJ) limits usable frequency in high-efficiency adapters; no integrated fast diode	Choose only if legacy design reuse or lower gate charge sensitivity is acceptable; avoid for new high-efficiency designs

Compared with STP5NK50ZFP, IPD50R2K0CEBTMA1 cuts switching loss by >40% and enables 2× higher frequency operation; versus IPD50R2K0CEXTMA1, it offers identical electrical performance at lower cost for non-automotive applications.

Availability

IPD50R2K0CEBTMA1 is available at Aetrix Electronics and suitable for LED driver power stages, AC-DC adapter primary switches, and PC silver box PSUs requiring stable component supply, long-term lifecycle assurance, and full traceability.

Supply support for IPD50R2K0CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ CE product line targets cost-sensitive, high-efficiency power conversion in consumer lighting and adapter markets, balancing performance, ruggedness, and manufacturability without compromising on 500 V system reliability.

FAQ

What is the maximum recommended gate resistor value for stable switching?

A 5.3 Ω gate resistor is used in the datasheet's dynamic test conditions (V_DD = 400 V, I_D = 0.8 A) to achieve controlled 5 ns rise time and 38 ns fall time. For 65 kHz QR flyback designs, 10–22 Ω is typical to suppress ringing while maintaining <100 ns total switching time; values above 47 Ω increase switching loss disproportionately.

Can IPD50R2K0CEBTMA1 be paralleled for higher current capacity?

Yes, but requires gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each gate path or individual totem-pole drivers to equalize switching timing and prevent current imbalance. Layout symmetry, matched trace lengths, and Kelvin source connections are mandatory; parallel operation increases thermal coupling and demands careful thermal derating per the R_thJC = 3.75 °C/W spec.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is fully compatible with 0 V to +15 V gate drive. Its V_GS(th) of 2.5–3.5 V and low 7 Ω internal gate resistance allow safe, noise-immune operation with standard logic-level or dedicated gate drivers without negative bias. Negative voltage is unnecessary and may accelerate gate oxide wear.

Is the body diode suitable for synchronous rectification?

No. While the body diode has fast t_rr (110 ns) and low Q_rr (0.35 µC), it is not optimized for synchronous rectification duty. Its V_SD is 0.83 V at 0.8 A - higher than discrete Schottky diodes - and lacks the low forward voltage and soft recovery needed for secondary-side SR in LLC or flyback. Use dedicated SR controllers with external MOSFETs instead.

IPD50R2K0CEBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 600mA, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 124 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50R2K0CEBTMA1 FAQ

1.How can I place an order for IPD50R2K0CEBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R2K0CEBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R2K0CEBTMA1 reliable?

The price and inventory of IPD50R2K0CEBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R2K0CEBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R2K0CEBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R2K0CEBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R2K0CEBTMA1?

IPD50R2K0CEBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R2K0CEBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R2K0CEBTMA1?

For technical support, including IPD50R2K0CEBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R2K0CEBTMA1 requirements.

6.How does Aetrix verify that IPD50R2K0CEBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R2K0CEBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R2K0CEBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R2K0CEBTMA1?

All IPD50R2K0CEBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R2K0CEBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R2K0CEBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R2K0CEBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…