Infineon Technologies IPD50R380CEBTMA1

Overview

IPD50R380CEBTMA1 from Infineon Technologies is a 500 V, 0.38 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO252 (DPAK) package, optimized for high-efficiency PFC and hard-switching SMPS in consumer adapters and indoor lighting. It delivers 14.1 A continuous drain current at T_C = 25°C, 24.8 nC total gate charge, and 2.54 µJ output switching energy at 400 V.

For engineers reviewing the IPD50R380CEBTMA1 datasheet, IPD50R380CEBTMA1 pinout, IPD50R380CEBTMA1 application, or IPD50R380CEBTMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high commutation ruggedness (500 A/µs di/dt), and gate-drive simplicity with 5.3 V plateau voltage and 3 Ω intrinsic gate resistance.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling high-voltage blocking (500 V V_(BR)DSS) with significantly reduced conduction and switching losses versus planar MOSFETs. Its 32 pF energy-related output capacitance (C_o(er)) and 133 pF time-related C_o(tr)) support efficient resonant and hard-switched topologies.

The MOSFET features a robust body diode with 207 ns reverse recovery time and 1.7 µC Q_rr at 400 V, enabling reliable operation in continuous conduction mode (CCM) PFC stages. Gate threshold voltage is tightly specified at 2.5–3.5 V, ensuring stable turn-on across temperature and minimizing shoot-through risk in half-bridge configurations.

Key Specifications

Pinout & Package

IPD50R380CEBTMA1 is housed in PG-TO252 (DPAK) package with exposed drain pad for thermal performance. The three-terminal configuration supports surface-mount assembly and direct PCB copper pour heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP5NK50ZFP and IPP60R099C6, IPD50R380CEBTMA1 offers the optimal balance of low R_DS(on), moderate Q_g, and DPAK thermal performance for cost-sensitive 400 V DC link applications-enabling smaller heatsinks, simpler gate drive, and higher power density than the ST part, while avoiding the over-specification and cost premium of the IPP part.

Availability

IPD50R380CEBTMA1 is available at Aetrix Electronics and suitable for adapter power supplies, LCD TV main power units, and indoor LED drivers requiring stable component supply and long-term production continuity.

Supply support for IPD50R380CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The CoolMOS™ CE product line targets cost-sensitive consumer and lighting applications, delivering high efficiency through superjunction technology while maintaining ease of use and robustness in mass-produced power supplies.

FAQ

Is IPD50R380CEBTMA1 suitable for paralleling in high-current designs?

Yes, but with design precautions: Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation and ensure current sharing. Layout symmetry, matched gate resistors, and Kelvin-source routing are essential. The device's 500 A/µs di/dt rating supports controlled paralleling in PFC and resonant converters up to 300 W per phase.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum gate-source voltage is ±30 V, but Infineon specifies 13 V as the optimal V_GS for full enhancement and minimal R_DS(on). Operation above 15 V increases gate oxide stress without meaningful R_DS(on) improvement and risks accelerated wear-out. For robustness in noisy environments, 12 V ±0.5 V gate drive is recommended.

Does IPD50R380CEBTMA1 require a gate resistor, and what value is typical?

Yes-a series gate resistor is required to control dV/dt and prevent ringing. Typical values range from 2.2 Ω to 10 Ω depending on switching frequency and layout. With 3 Ω intrinsic gate resistance, a 4.7 Ω external resistor yields ~7.7 Ω total, achieving ~35 ns turn-off delay and stable 65–100 kHz operation in flyback and PFC stages.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode shows 207 ns t_rr, 1.7 µC Q_rr, and 15.5 A I_RRM at 400 V - significantly faster and lower-loss than standard planar MOSFETs (typically >500 ns t_rr). This enables efficient CCM PFC operation without external SiC diodes, though it remains slower than dedicated SiC Schottky devices used in ultra-high-frequency designs.