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Infineon Technologies IPD50R399CP

Part No.:
IPD50R399CP
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD50R399CP.pdf
Description:
MOSFET N-CH 500V 9A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,296

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Product details

Overview

IPD50R399CP from Infineon Technologies is a 550 V, 0.399 Ω RDS(on) CoolMOS™ CPl-series superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for hard/soft-switching SMPS and DCM PFC in lamp ballasts and LCD/PDP TVs. It delivers 17 nC typical gate charge, 215 mJ single-pulse avalanche energy, and extreme dv/dt ruggedness up to 400 V/ns.

For engineers reviewing the IPD50R399CP datasheet, IPD50R399CP pinout, IPD50R399CP application, or IPD50R399CP equivalent, key selection criteria include RDS(on) × Qg figure of merit, thermal resistance (RthJC = 1.5 K/W), diode reverse recovery performance (trr = 260 ns), and JEDEC-qualified reliability for industrial lighting and TV power stages.

Technical Context

This device employs Infineon's 4th-generation CoolMOS™ CP technology with optimized charge distribution for reduced conduction and switching losses. Its ultra-low Qg (17 nC typ.) and low Ciss (890 pF) enable high-frequency operation in resonant and quasi-resonant topologies.

The integrated body diode features soft reverse recovery (Qrr = 1.9 µC, Irrm = 12.2 A) and 15 V/ns diode dv/dt rating under defined conditions. Thermal design is supported by a low junction-to-case resistance (1.5 K/W) and validated SOA up to 10 ms at TC = 25 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VDS max 550 V - supports 400 V DC-link designs with 25% margin for voltage transients in PFC and SMPS stages
RDS(on) max 0.399 Ω @ Tj = 150 °C - enables <4.9 A continuous drain current at 100 °C case temperature with low conduction loss
Qg typ 17 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency converters
EAS 215 mJ - withstands single-pulse avalanche stress without failure in unclamped inductive switching (UIS) events
trr 260 ns - limits diode switching loss and EMI generation during hard-commutated freewheeling in bridge configurations
RthJC 1.5 K/W - enables efficient heat transfer to PCB copper or heatsink, supporting >83 W power dissipation at TC = 25 °C
dv/dt ruggedness 400 V/ns - prevents spurious turn-on in high-dV/dt environments such as LLC resonant converters and motor drives

Pinout & Package

IPD50R399CP uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Drain (tab), Source (pin 1), and Gate (pin 2).

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) Main high-side power terminal Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly to board
Source (Pin 1) Reference node for gate drive and current sensing Low-inductance return path; used for source degeneration or current monitoring in half-bridge configurations
Gate (Pin 2) Control input for channel modulation High-impedance input requiring <35.1 Ω series gate resistor to damp ringing and control switching speed

Key Features

Feature Design Value
Lowest RDS(on) × Qg FoM Reduces total power loss in high-frequency SMPS, enabling >95% efficiency in 100–300 kHz PFC stages
Extreme dv/dt ruggedness Rated to 400 V/ns - eliminates need for external snubbers in fast-switching topologies like ZVS-PWM and LLC
JEDEC-qualified reliability Complies with J-STD-20 and JESD22 - validated for long-term operation in lamp ballast and consumer TV applications
Integrated robust body diode trr = 260 ns, Qrr = 1.9 µC - supports synchronous rectification and bidirectional current flow in half-bridge PFC
Pb-free & RoHS-compliant plating Meets global environmental regulations without compromising solderability or thermal cycling performance

Applications

Lamp Ballast DCM PFC LCD TV Main SMPS

Use Scenario: High-efficiency, low-EMI boost PFC stage operating in discontinuous conduction mode for fluorescent lamp drivers.

IC Role / Device Role / Timing Role: Primary switching transistor handling 400 V DC-link and delivering 4.9 A peak current at 65–133 kHz.

Use Value: Low Qg and soft diode recovery minimize switching loss and audible noise while meeting IEC 61000-3-2 harmonic standards.

Use Scenario: Primary-side switch in 150–250 W flyback or LLC resonant converter powering LCD panel backlight and logic rails.

IC Role / Device Role / Timing Role: High-voltage, high-speed switching element with 550 V rating and 400 V/ns dv/dt immunity for reliable operation under line surges.

Use Value: 1.5 K/W RthJC enables compact thermal design on FR4 PCB without heatsink, reducing BOM cost and footprint.

PDP TV Power Supply Industrial AC-DC Adapters

Use Scenario: High-power primary switch in dual-output forward or half-bridge converter supplying sustain and address voltages for plasma display panels.

IC Role / Device Role / Timing Role: Hard-switched power transistor rated for repetitive avalanche (EAR) and high peak current (20 A pulsed).

Use Value: 215 mJ EAS ensures robustness against transformer leakage inductance spikes during overloads and short circuits.

Use Scenario: Universal-input, 75–150 W AC-DC adapter for industrial control modules requiring wide ambient temperature range (-40 to +125 °C).

IC Role / Device Role / Timing Role: Main power switch with 0.399 Ω RDS(on) max at 150 °C, enabling stable operation without derating at full load.

Use Value: RDS(on) drift vs. temperature curve ensures predictable conduction loss across industrial temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPD50R380CE RDS(on) max = 0.380 Ω, Qg = 18.5 nC, same PG-TO252 package, newer CE generation Slightly lower conduction loss but higher gate charge; optimized for <100 kHz operation Prefer for new designs targeting minimal RDS(on) at cost of marginal Qg increase
IPP60R380C6 RDS(on) max = 0.380 Ω, Qg = 16.5 nC, TO-220FP package, 600 V rating Higher voltage rating and lower Qg, but larger through-hole package and higher RthJA Select when board space allows TO-220FP and 600 V margin is required for future-proofing

Compared with IPD50R399CP, IPD50R380CE offers marginally better conduction efficiency but trades off gate drive energy, while IPP60R380C6 provides higher voltage headroom and lower Qg at the expense of thermal performance and mounting flexibility.

Availability

IPD50R399CP is available at Aetrix Electronics and suitable for lamp ballast DCM PFC, LCD TV main SMPS, and industrial AC-DC adapters requiring stable component supply and JEDEC-qualified reliability.

Supply support for IPD50R399CP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ CP series targets high-efficiency, high-reliability power conversion in consumer electronics and industrial lighting, emphasizing low RDS(on) × Qg and ruggedness in hard-switching topologies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPD50R399CP supports 6 A continuous drain current at TC = 100 °C, derived from its 0.399 Ω RDS(on) max and thermal resistance (RthJC = 1.5 K/W). This rating assumes adequate PCB copper area per Infineon's layout guidelines and no additional heatsinking.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control switching speed and suppress oscillation. Infineon recommends 35.1 Ω for standard 400 V, 4.9 A switching conditions. Lower values increase dv/dt stress; higher values reduce EMI but raise switching loss.

Can the integrated body diode be used for synchronous rectification?

No - the body diode is not optimized for synchronous rectification. Its trr = 260 ns and Qrr = 1.9 µC cause significant reverse recovery loss. For SR, use a dedicated low-Qrr Schottky or MOSFET with external control logic.

Is the PG-TO252 package lead-free compatible with standard reflow profiles?

Yes - the IPD50R399CP uses Pb-free lead plating qualified per J-STD-20. It supports peak reflow temperatures up to 260 °C for 10 seconds at 1.6 mm from the case, matching IPC/JEDEC J-STD-020D.2 requirements.

IPD50R399CP Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CP
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
890 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-11

IPD50R399CP FAQ

1.How can I place an order for IPD50R399CP through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R399CP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R399CP reliable?

The price and inventory of IPD50R399CP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R399CP is usually 5 days.

3.What payment methods are accepted for IPD50R399CP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R399CP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R399CP?

IPD50R399CP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R399CP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R399CP?

For technical support, including IPD50R399CP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R399CP requirements.

6.How does Aetrix verify that IPD50R399CP is sourced from the original manufacturer or authorized distributors?

All IPD50R399CP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R399CP meets industry standards.

7.What is the process for return or replacement of IPD50R399CP?

All IPD50R399CP units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R399CP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R399CP part is unused and in its original packaging.

Return procedure for IPD50R399CP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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