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Infineon Technologies IPD50R399CPBTMA1

Part No.:
IPD50R399CPBTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD50R399CPBTMA1.pdf
Description:
LOW POWER_LEGACY
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,251

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Product details

Overview

IPD50R399CPBTMA1 from Infineon Technologies is a 550 V, 0.399 Ω RDS(on) CoolMOS™ CP superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for hard/soft-switching SMPS and DCM PFC in lamp ballasts and LCD/PDP TVs. It delivers 9 A continuous drain current at TC = 25 °C, 17 nC typical gate charge, and 215 mJ single-pulse avalanche energy.

For engineers reviewing the IPD50R399CPBTMA1 datasheet, IPD50R399CPBTMA1 pinout, IPD50R399CPBTMA1 application, or IPD50R399CPBTMA1 equivalent, key selection criteria include RDS(on) × Qg figure of merit, dv/dt ruggedness (400 V/ns), reverse diode recovery performance (trr = 260 ns), and thermal resistance (RthJC = 1.5 K/W).

Technical Context

This 550 V superjunction MOSFET employs charge compensation technology to achieve ultra-low RDS(on) × Qg (≈6.8 Ω·nC), enabling high-efficiency switching in continuous conduction mode (CCM) and discontinuous conduction mode (DCM) topologies. Its 2.5–3.5 V gate threshold voltage ensures robust noise immunity while supporting standard 10 V gate drive.

The integrated body diode features low forward voltage (VSD = 0.9–1.2 V @ 4.9 A) and controlled reverse recovery (Qrr = 1.9 µC, Irrm = 12.2 A), reducing switching losses in bridge-leg and synchronous rectification configurations. Thermal design is supported by 1.5 K/W junction-to-case resistance and JEDEC-qualified reliability for industrial lighting and consumer power supplies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max550 V - supports 400 V DC-link designs with 25% margin for voltage transients
RDS(on) max0.399 Ω @ Tj = 25 °C - enables <9 A continuous operation at TC = 25 °C with ≤4.9 W conduction loss
Qg typ17 nC - reduces gate drive power and enables >100 kHz switching with low driver stress
EAS215 mJ - withstands single-pulse avalanche events without failure under 50 V clamp conditions
dv/dt rating400 V/ns - prevents spurious turn-on in high-di/dt environments like PFC boost stages
RthJC1.5 K/W - allows 83 W power dissipation at TC = 25 °C before reaching Tjmax = 150 °C
trr260 ns - limits reverse recovery loss in half-bridge and LLC resonant converters

Pinout & Package

IPD50R399CPBTMA1 is housed in PG-TO252 (DPAK) package with exposed drain pad for thermal enhancement. Pin assignment follows standard 3-terminal TO252 layout: Drain (tab), Source (pin 1), Gate (pin 2).

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path collectorElectrically connected to heatsink; requires insulated mounting or thermal pad for PCB thermal management
Source (Pin 1)Reference node for gate drive and current sensingServes as return path for load current and gate drive loop; critical for minimizing common-source inductance
Gate (Pin 2)Control terminal for channel modulationHigh-impedance input requiring low-inductance routing; gate resistor selection affects switching speed and EMI

Key Features

FeatureDesign Value
Lowest RDS(on) × Qg≈6.8 Ω·nC - enables highest efficiency in high-frequency SMPS without sacrificing gate drive simplicity
Extreme dv/dt ruggedness400 V/ns - eliminates need for external snubbers in fast-switching PFC and resonant converters
High peak current capabilityID,pulse = 20 A - supports surge handling during startup and overload in TV backlight inverters
JEDEC-qualified reliabilityJ-STD-20/JESD22 compliant - validated for long-term operation in lamp ballast and consumer display applications
RoHS-compliant platingPb-free lead finish - meets global environmental regulations without compromising solderability or wire-bond reliability

Applications

Lamp Ballast DCM PFCLCD TV Backlight Inverter

Use Scenario: Discontinuous Conduction Mode Power Factor Correction stage in electronic fluorescent lamp (EFL) ballasts operating at 50–60 kHz.

IC Role / Device Role / Timing Role: Main switch in boost converter topology, handling 400 V DC-link and delivering regulated 120–150 V output.

Use Value: Low Qg and high dv/dt rating reduce switching losses and eliminate false triggering during line-voltage zero-crossings.

Use Scenario: Half-bridge primary switch in CCFL or LED backlight inverter for 32–55 inch LCD TVs.

IC Role / Device Role / Timing Role: High-side and low-side switching element driving resonant tank at 30–80 kHz with soft-start and overcurrent protection.

Use Value: 215 mJ avalanche energy and 20 A pulsed current capability ensure robustness against lamp ignition surges and open-circuit faults.

PDP Display Power SupplyIndustrial SMPS Auxiliary Stage

Use Scenario: Primary-side switch in flyback or forward converter supplying logic and sustain voltages in plasma display panels.

IC Role / Device Role / Timing Role: 550 V-rated switch managing 380 V DC bus with tight regulation across wide load range (10–100%).

Use Value: 0.399 Ω RDS(on) minimizes conduction loss at partial load, improving standby efficiency compliance (Energy Star Tier 2).

Use Scenario: Auxiliary power supply switch in industrial PLC or motor drive control boards requiring high-reliability 24 V output.

IC Role / Device Role / Timing Role: Isolated flyback switch operating at fixed 65 kHz, powering microcontroller, gate drivers, and sensors.

Use Value: RthJC = 1.5 K/W and -55…150 °C operating range support uncooled operation in sealed enclosures up to 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPD50R400CEXTMA1RDS(on) max = 0.400 Ω, Qg = 16.5 nC, same PG-TO252 packageOptimized for lower gate charge in high-frequency PFC; identical thermal footprintSelect when prioritizing minimal gate drive loss over marginal RDS(on) reduction
IPP50R399CPSame RDS(on) and QgPG-TO220 package with higher RthJC (1.0 K/W) and larger board areaChoose for legacy designs requiring TO220 mechanical compatibility and higher power dissipation headroom

Compared with IPD50R399CPBTMA1, IPD50R400CEXTMA1 offers slightly lower Qg for improved high-frequency efficiency but no RDS(on) advantage, while IPP50R399CP trades compact DPAK size for greater thermal mass and easier heatsinking in space-tolerant industrial layouts.

Availability

IPD50R399CPBTMA1 is available at Aetrix Electronics and suitable for lamp ballast DCM PFC, LCD TV backlight inverters, and industrial auxiliary SMPS requiring stable component supply and long-lifecycle support.

Supply support for IPD50R399CPBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ CP product line targets high-efficiency AC-DC conversion in consumer lighting and display power supplies, emphasizing low RDS(on) × Qg, avalanche robustness, and JEDEC-qualified reliability for cost-sensitive, high-volume applications.

FAQ

What is the maximum continuous drain current at TC = 100 °C?

The IPD50R399CPBTMA1 supports 6 A continuous drain current at case temperature of 100 °C, derated from 9 A at 25 °C per the thermal resistance curve and SOA limitations. This value accounts for increased RDS(on) at elevated junction temperatures and ensures safe operation within the 150 °C maximum junction temperature limit.

Does this MOSFET require a negative gate turn-off voltage?

No, the IPD50R399CPBTMA1 does not require negative gate drive. Its gate threshold voltage (2.5–3.5 V) and positive-only gate-source voltage rating (±20 V) allow reliable turn-off with 0 V gate bias. Negative voltage is unnecessary due to its high dv/dt immunity and low gate leakage (<100 nA).

How does the body diode performance compare to standard silicon MOSFETs?

The integrated body diode exhibits trr = 260 ns, Qrr = 1.9 µC, and VSD = 0.9–1.2 V at 4.9 A, significantly faster and lower-loss than conventional planar MOSFET diodes. This results from optimized charge compensation structure, enabling reduced reverse recovery loss in hard-switched bridge configurations.

Is the PG-TO252 package lead-free and RoHS-compliant?

Yes, the IPD50R399CPBTMA1 uses Pb-free lead plating and is fully RoHS-compliant per EU Directive 2011/65/EU. The device passes J-STD-020 reflow profile requirements, including peak soldering temperature of 260 °C for 10 seconds at 1.6 mm from case, ensuring compatibility with standard lead-free assembly processes.

IPD50R399CPBTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CP
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
890 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-313

IPD50R399CPBTMA1 FAQ

1.How can I place an order for IPD50R399CPBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R399CPBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R399CPBTMA1 reliable?

The price and inventory of IPD50R399CPBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R399CPBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R399CPBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R399CPBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R399CPBTMA1?

IPD50R399CPBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R399CPBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R399CPBTMA1?

For technical support, including IPD50R399CPBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R399CPBTMA1 requirements.

6.How does Aetrix verify that IPD50R399CPBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R399CPBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R399CPBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R399CPBTMA1?

All IPD50R399CPBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R399CPBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R399CPBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R399CPBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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