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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R3K0CEBTMA1

Name: IPD50R3K0CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R3K0CEBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R3K0CEBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R3K0CEBTMA1.pdf

Description:: MOSFET N-CH 500V 1.7A TO252-3

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Inventory:9,197

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Product details

Overview

IPD50R3K0CEBTMA1 from Infineon Technologies is a 500 V, 3.0 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in DPAK (PG-TO252) package, rated for 2.6 A continuous drain current at 25°C and optimized for high-efficiency, cost-sensitive PFC and hard-switching SMPS stages in consumer lighting and adapters.

For engineers reviewing the IPD50R3K0CEBTMA1 datasheet, IPD50R3K0CEBTMA1 pinout, IPD50R3K0CEBTMA1 application, or IPD50R3K0CEBTMA1 equivalent, key selection criteria include its 4.3 nC total gate charge, 0.49 µJ output energy at 400 V, 50 V/ns dv/dt ruggedness, and validated commutation robustness in resonant topologies - all critical for EMI-limited, thermally constrained designs.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) while maintaining soft switching behavior and high avalanche ruggedness. Its gate threshold voltage of 2.5–3.5 V and plateau voltage of 5.3 V support stable drive with standard 12 V gate drivers.

Designed for unidirectional high-voltage switching, it integrates an intrinsic fast-recovery body diode (t_rr = 99 ns, Q_rr = 0.3 µC) suitable for discontinuous conduction mode (DCM) PFC and LLC resonant converters where reverse recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC-link operation with 25% margin for surge and ringing
R_DS(on) max	3.0 Ω @ T_j = 25°C - enables low conduction loss in <2.6 A average-current applications
Q_g typ	4.3 nC - reduces gate drive power and allows use of low-cost, low-current drivers
E_oss @ 400 V	0.49 µJ - lowers turn-off loss and improves efficiency in high-frequency PWM stages
dv/dt ruggedness	50 V/ns - ensures reliable operation under fast voltage transients without spurious turn-on
t_rr	99 ns - limits reverse recovery overshoot and EMI in diode-commutated topologies
R_thJC	4.85 °C/W - supports 26 W power dissipation with moderate heatsinking on PCB

Pinout & Package

Package: PG-TO252 (DPAK), surface-mount, single-ended drain tab for thermal relief and mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; low 6 Ω gate resistance enables fast, damped switching transitions
Pin 2 (Drain)	High-side power node	Connected to DC-link or transformer primary; large copper area required for thermal conduction
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver; must minimize loop inductance to suppress oscillation

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	Enables >95% efficiency in 65–100 kHz PFC boost stages without active cooling
High commutation ruggedness	Validated 18 mJ single-pulse avalanche energy supports non-clamped inductive switching
Easy gate drive compatibility	Threshold and plateau voltages align with industry-standard 12 V logic-level drivers
Pb-free & halogen-free	Meets RoHS 2011/65/EU and JEDEC J-STD-020 reflow requirements for SMT assembly

Applications

LED Driver Power Stage

AC-DC Adapter Primary Switch

Use Scenario: Constant-current LED driver operating in quasi-resonant flyback topology with 36–48 V output and 100–200 mA load.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer during each switching cycle.

Use Value: Low E_oss and fast t_rr reduce switching loss and audible noise, extending thermal headroom for compact enclosure designs.

Use Scenario: 36 W universal-input AC-DC adapter for consumer electronics using fixed-frequency DCM flyback.

IC Role / Device Role / Timing Role: Main power switch in primary-side regulation architecture.

Use Value: 3.0 Ω R_DS(on) and 4.3 nC Q_g enable full-load efficiency >87% at 230 VAC without auxiliary cooling.

PFC Boost Converter

LCD TV Power Supply

Use Scenario: Active boost PFC stage in 120 W LCD monitor power supply operating at 65 kHz.

IC Role / Device Role / Timing Role: Unidirectional switch in continuous conduction mode (CCM) boost circuit.

Use Value: High dv/dt ruggedness (50 V/ns) prevents false triggering during line-voltage zero-crossing transients.

Use Scenario: Main power switch in 200 W half-bridge LLC resonant converter for 42-inch LCD TV backlight supply.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge configuration.

Use Value: Body diode t_rr = 99 ns and Q_rr = 0.3 µC minimize dead-time losses and voltage spikes during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.4 Ω R_DS(on), 11 nC Q_g, TO-220FP package	Higher conduction and switching loss; requires larger heatsink and slower gate drive	Select when legacy TO-220 footprint is mandatory and efficiency targets are relaxed
IPP60R099C6	600 V, 0.099 Ω R_DS(on), 44 nC Q_g, TO-220 package	Lower R_DS(on) but significantly higher gate charge and cost; over-specified for ≤2.6 A loads	Select only if system requires <0.1 Ω R_DS(on) and can accommodate higher drive complexity

Compared with STP5NK50ZFP and IPP60R099C6, IPD50R3K0CEBTMA1 delivers optimal balance of low gate charge, moderate R_DS(on), and DPAK thermal performance - making it ideal for space-constrained, cost-driven consumer power supplies where 2.6 A current handling suffices.

Availability

IPD50R3K0CEBTMA1 is available at Aetrix Electronics and suitable for LED drivers, AC-DC adapters, and PFC boost converters requiring stable component supply, consistent parametric performance across production lots, and long-term industrial availability.

Supply support for IPD50R3K0CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CE family - a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting applications where price-performance ratio and ease of drive are decisive.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor of 5.3 Ω is specified in the datasheet for characterization, yielding 7.3 ns turn-on delay and 49 ns fall time. For stable operation, values between 4.7 Ω and 10 Ω are recommended to damp ringing while maintaining acceptable switching speed and gate driver loading.

Can IPD50R3K0CEBTMA1 be paralleled in high-current designs?

Yes, but with strict layout controls: individual ferrite beads on each gate line and separate totem-pole drivers are required per the datasheet to ensure balanced current sharing and prevent oscillation-induced failure during dynamic load steps.

Is this MOSFET suitable for zero-voltage switching (ZVS) topologies?

Yes - its low E_oss (0.49 µJ at 400 V), fast body diode (t_rr = 99 ns), and high dv/dt ruggedness make it well-suited for LLC and phase-shifted full-bridge converters where ZVS is employed to reduce switching loss.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 1.6 A (per Table 2). The SOA curve (Diagram 3) shows that for pulse widths >100 µs, the maximum allowable V_DS drops below 200 V at 1.6 A - confirming thermal limits dominate over avalanche or secondary breakdown in sustained operation.

IPD50R3K0CEBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 400mA, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 4.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 84 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 18W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50R3K0CEBTMA1 FAQ

1.How can I place an order for IPD50R3K0CEBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R3K0CEBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R3K0CEBTMA1 reliable?

The price and inventory of IPD50R3K0CEBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R3K0CEBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R3K0CEBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R3K0CEBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R3K0CEBTMA1?

IPD50R3K0CEBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R3K0CEBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R3K0CEBTMA1?

For technical support, including IPD50R3K0CEBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R3K0CEBTMA1 requirements.

6.How does Aetrix verify that IPD50R3K0CEBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R3K0CEBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R3K0CEBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R3K0CEBTMA1?

All IPD50R3K0CEBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R3K0CEBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R3K0CEBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R3K0CEBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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