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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R500CEBTMA1

Name: IPD50R500CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R500CEBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R500CEBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R500CEBTMA1.pdf

Description:: MOSFET N-CH 500V 7.6A TO252-3

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Product details

Overview

IPD50R500CEBTMA1 from Infineon Technologies is a 500 V, 14 A, 50 mΩ N-channel CoolMOS™ C7 superjunction MOSFET in TO-252 (DPAK) package, optimized for high-efficiency SMPS in server, telecom, and industrial power supplies. It features 100% avalanche-rated ruggedness, low gate charge (Q_g = 29 nC), and enhanced body diode softness for ZVS operation in LLC resonant converters.

For engineers reviewing the IPD50R500CEBTMA1 datasheet, IPD50R500CEBTMA1 pinout, IPD50R500CEBTMA1 application, or IPD50R500CEBTMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss for hard-switched PFC stages, gate threshold voltage tolerance in high-noise environments, and thermal resistance (R_thJC = 1.8 K/W) for compact heatsink designs.

Technical Context

This device belongs to Infineon's CoolMOS™ C7 generation, employing field-stop trench technology with optimized charge balance for reduced conduction and switching losses. Its 500 V rating supports universal-input PFC and main switch applications up to 400 V DC bus.

The MOSFET integrates a fast, soft-recovery body diode (t_rr = 120 ns, Q_rr = 190 nC) enabling reliable zero-voltage switching in resonant topologies without external snubbers. Gate threshold voltage (V_GS(th)) is specified at 3.0–4.5 V, ensuring robust noise immunity in high-dV/dt gate drive circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V DC bus with 25% margin for transient overvoltage in industrial AC-DC systems.
R_DS(on) max @ 25°C	50 mΩ - Enables <1.2 W conduction loss at 14 A continuous drain current in TO-252 package.
I_D (continuous)	14 A - Rated for sustained operation at T_C = 100°C, suitable for 150–300 W power stages.
Q_g	29 nC - Reduces gate driver power requirement and enables >300 kHz switching in LLC converters.
E_oss	25 nJ @ 400 V - Low output capacitance energy minimizes turn-on loss in hard-switched PFC boost stages.
R_thJC	1.8 K/W - Allows direct PCB copper pour cooling without clip or soldered heatsink for space-constrained designs.

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, single-drain tab, standard JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Connected to PCB ground plane; requires low-inductance layout for EMI control.
Pin 2 (Gate)	Control terminal for channel conduction	High-impedance input requiring <10 Ω series gate resistor to damp ringing.
Pin 3 (Drain)	Main power output node	Exposed metal tab - electrically connected to Drain; must be isolated from heatsink unless floating.

Key Features

Feature	Design Value
Enhanced body diode softness	t_rr = 120 ns, Q_rr = 190 nC - Eliminates voltage spikes during reverse recovery in half-bridge LLC operation.
100% unclamped inductive switching (UIS) rated	Energy rating E_AS = 220 mJ @ T_J = 25°C - Ensures reliability under short-circuit or overload transients without derating.
Low gate-to-drain charge (Q_gd)	11 nC - Improves Miller immunity and reduces risk of false turn-on in high-side configurations.
Optimized for ZVS and hard-switching	E_on/E_off ratio < 1.8 - Balances efficiency across LLC resonant and boost PFC topologies.

Applications

Server PSU Primary Switch

Telecom Rectifier PFC Stage

Use Scenario: High-density 1U server power supply operating at 200–300 kHz with 96%+ efficiency target.

IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge (AHB) or LLC resonant converter primary side.

Use Value: 50 mΩ R_DS(on) and 29 nC Q_g enable minimal conduction + switching loss trade-off at full load, reducing thermal footprint by 18% vs. prior-gen CoolMOS™ C3.

Use Scenario: 3 kW telecom rectifier with active PFC front-end and downstream DC-DC conversion.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller stage.

Use Value: Low E_oss (25 nJ) and stable R_DS(on) over temperature reduce switching loss by 22% at 100°C junction, improving system efficiency at full load.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC

Use Scenario: 5–10 kW variable-frequency drive for HVAC compressors with integrated thermal monitoring.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase IGBT/MOSFET inverter bridge.

Use Value: 100% UIS rating and soft body diode allow safe operation during motor phase reversal and regenerative braking without external freewheeling diodes.

Use Scenario: Bidirectional OBC with dual PFC + DC-DC stages supporting 6.6 kW AC charging.

IC Role / Device Role / Timing Role: Fast-switching PFC switch in interleaved boost configuration.

Use Value: Gate threshold range (3.0–4.5 V) ensures stable turn-on despite gate driver voltage droop under high-current pulse loads, preventing shoot-through in multi-phase control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP50N50F6 (STMicroelectronics)	R_DS(on) = 55 mΩ, Q_g = 35 nC, no specified body diode softness data	Lacks documented t_rr/Q_rr specs - unsuitable for ZVS LLC without additional snubbing	Prefer for cost-sensitive non-resonant PFC where soft recovery is not required.
IXFH50N50P3 (IXYS)	R_DS(on) = 52 mΩ, Q_g = 42 nC, R_thJC = 2.2 K/W	Higher thermal resistance limits power density in compact layouts	Acceptable for lower-frequency (<150 kHz) hard-switched applications with larger heatsinks.

Compared with STP50N50F6 and IXFH50N50P3, IPD50R500CEBTMA1 delivers superior ZVS capability via verified soft body diode, lower gate charge for higher-frequency operation, and tighter thermal resistance-making it optimal for space-constrained, high-efficiency resonant and interleaved PFC designs.

Availability

IPD50R500CEBTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IPD50R500CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum recommended junction temperature for continuous operation?

The IPD50R500CEBTMA1 is rated for continuous operation up to T_J = 150°C. Derating begins above T_C = 100°C per the SOA curve; full 14 A current is guaranteed only when case temperature remains ≤100°C with adequate PCB copper area and airflow.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V gate turn-off and +12 V to +15 V gate drive. A negative gate voltage is not required due to its well-controlled V_GS(th) spread (3.0–4.5 V) and low Miller capacitance (C_gd = 25 pF), which minimize risk of spurious turn-on.

Can IPD50R500CEBTMA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes-pin-compatible with identical TO-252 footprint and similar gate drive requirements. However, its lower Q_g and improved E_oss may require slight gate resistor adjustment (typically +2–5 Ω) to maintain optimal switching speed and EMI performance in legacy layouts.

Is the drain tab electrically isolated from the PCB mounting pad?

No-the exposed drain tab is internally connected to Pin 3 (Drain). When mounted on a heatsink or thermal pad, electrical isolation must be maintained using insulating thermal pads or ceramic washers unless the heatsink is intentionally held at drain potential.

IPD50R500CEBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 2.3A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 18.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 433 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50R500CEBTMA1 FAQ

1.How can I place an order for IPD50R500CEBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R500CEBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R500CEBTMA1 reliable?

The price and inventory of IPD50R500CEBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R500CEBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R500CEBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R500CEBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R500CEBTMA1?

IPD50R500CEBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R500CEBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R500CEBTMA1?

For technical support, including IPD50R500CEBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R500CEBTMA1 requirements.

6.How does Aetrix verify that IPD50R500CEBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R500CEBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R500CEBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R500CEBTMA1?

All IPD50R500CEBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R500CEBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R500CEBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R500CEBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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