Infineon Technologies IPD50R520CP
- Part No.:
- IPD50R520CP
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD50R520CP.pdf
- Description:
- MOSFET N-CH 500V 7.1A TO252-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,443
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Product details
Overview
IPD50R520CP from Infineon Technologies is a 500 V, 0.52 Ω RDS(on) CoolMOS™ CP superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for hard- and soft-switching SMPS topologies with ultra-low gate charge (13 nC typ), extreme dv/dt ruggedness (50 V/ns), and high peak current capability (15 A pulsed). It delivers high efficiency in lamp ballast PFC and LCD TV PWM stages.
For engineers reviewing the IPD50R520CP datasheet, IPD50R520CP pinout, IPD50R520CP application, or IPD50R520CP equivalent, key selection criteria include its 500 V V(BR)DSS, 7.1 A continuous drain current at TC = 25 °C, 1.9 K/W RthJC, 0.9–1.2 V diode forward voltage, and JEDEC-qualified reliability for industrial lighting and consumer power supplies.
Technical Context
This device employs Infineon's CoolMOS™ CP trench-gate superjunction architecture to achieve low RDS(on) × Qg figure of merit (0.52 Ω × 13 nC), enabling reduced conduction and switching losses in high-frequency converters. Its 50 V/ns dv/dt rating and 166 mJ single-pulse avalanche energy support robust operation under transient overvoltage and inductive switching stress.
The integrated fast-recovery body diode (trr = 240 ns, Qrr = 1.6 µC) enables reliable operation in discontinuous conduction mode (DCM) PFC and resonant topologies without external diode supplementation. Thermal resistance RthJC = 1.9 K/W ensures effective heat transfer to PCB copper in surface-mount applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 500 V - Withstands DC link voltages up to 400 V in PFC and SMPS with 25% margin |
| RDS(on), max | 0.520 Ω at Tj = 25 °C - Enables <7.1 A continuous conduction with ≤2.6 W conduction loss at 3.8 A |
| Qg, typ | 13 nC - Reduces gate drive power and enables >300 kHz switching with standard 1-A drivers |
| dv/dt ruggedness | 50 V/ns - Sustains rapid voltage transients in hard-switched bridge legs without false turn-on |
| EAS | 166 mJ - Absorbs single inductive energy spikes without failure in flyback or LLC primary switches |
| trr | 240 ns - Limits reverse recovery loss and EMI in DCM PFC stages operating at 65–100 kHz |
| RthJC | 1.9 K/W - Allows direct thermal coupling to 2 oz copper pads for <100 °C junction rise at 5 W dissipation |
Pinout & Package
IPD50R520CP uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (Pin 1) | Control terminal | Receives 10 V logic-level drive; requires <13 nC charge for full enhancement |
| Drain (Pin 2 / Tab) | High-side power output | Electrically and thermally connected to PCB copper pour; carries main switching current |
| Source (Pin 3) | Reference node | Provides return path for load current and gate drive loop; critical for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × Qg | 0.52 Ω × 13 nC = 6.76 Ω·nC - Delivers best-in-class efficiency trade-off for 500 V SMPS |
| JEDEC-qualified reliability | Qualified per J-STD-20/JESD22 - Ensures long-term stability in lamp ballast and TV power supplies |
| Enhanced body diode performance | trr = 240 ns, Qrr = 1.6 µC - Reduces diode-related switching loss and EMI vs. standard SJ-MOSFETs |
| High dv/dt immunity | 50 V/ns - Eliminates need for external gate resistors or snubbers in high-dV/dt layouts |
Applications
| Lamp Ballast DCM PFC | LCD TV PWM Power Stage |
|---|---|
Use Scenario: Discontinuous conduction mode boost converter in electronic fluorescent lamp (EFL) ballasts operating at 65–100 kHz. IC Role / Device Role / Timing Role: Primary switch controlling energy transfer into boost inductor; handles 3.8 A peak current and 400 V DC link. Use Value: Low Qg and fast trr reduce switching loss by ~18% vs. legacy 500 V MOSFETs, improving ballast efficiency to >92%. | Use Scenario: Main PWM switch in 100–200 W backlight inverter and main SMPS for LCD TV power supply. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology driving resonant tank; rated for 7.1 A continuous at 25 °C case temperature. Use Value: 1.9 K/W RthJC enables compact heatsinkless design on 2-layer PCB, reducing BOM cost by $0.35/unit. |
| PDP Power Supply | Industrial SMPS |
Use Scenario: Primary-side switch in 300–500 W switched-mode power supply for plasma display panel (PDP) sustain and address circuits. IC Role / Device Role / Timing Role: Hard-switched MOSFET handling repetitive 400 V DC link and 15 A pulsed drain current during sustain pulses. Use Value: 166 mJ EAS and 50 V/ns dv/dt rating prevent failure during high-energy sustain pulse transients. | Use Scenario: Primary switch in 150–300 W industrial AC/DC adapter for programmable logic controllers and sensor interfaces. IC Role / Device Role / Timing Role: 500 V-rated superjunction MOSFET operating in continuous conduction mode at 100 kHz with 150 °C junction limit. Use Value: RDS(on) drift <1.2 Ω at 150 °C ensures stable output regulation across full industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 500 V superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | RDS(on) = 0.95 Ω, Qg = 17 nC, RthJC = 2.5 K/W | Higher conduction loss and lower switching speed; suited for <100 kHz designs | Prefer where gate drive strength is limited and thermal margin exceeds 20 K/W |
| IPP50R520CP | Same die, TO-220 package, identical RDS(on)/Qg, RthJC = 0.8 K/W | Requires through-hole mounting and heatsink; higher thermal performance but larger footprint | Choose when board space allows and junction temperature must stay <125 °C at >10 W dissipation |
Compared with STP5NK50ZFP, IPD50R520CP delivers 45% lower conduction loss and faster switching; versus IPP50R520CP, it trades 2.4× higher RthJC for 60% smaller PCB area and simplified assembly.
Availability
IPD50R520CP is available at Aetrix Electronics and suitable for lamp ballast DCM PFC, LCD TV PWM power stages, and industrial SMPS requiring stable component supply, RoHS compliance, and JEDEC-qualified reliability.
Supply support for IPD50R520CP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.
The CoolMOS™ CP product line targets high-efficiency, high-frequency AC/DC and DC/DC conversion in consumer, lighting, and industrial power supplies-designed specifically to replace planar MOSFETs with superior RDS(on) × Qg performance.
FAQ
What is the maximum continuous drain current for IPD50R520CP at 100 °C case temperature?
The maximum continuous drain current ID is 4.5 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and assumes proper PCB copper area and ambient airflow per JEDEC Std. 51-14.
Does IPD50R520CP require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage VGS(th) of 2.5–3.5 V and is fully enhanced at VGS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended per datasheet guidelines.
Can IPD50R520CP be used in synchronous rectification applications?
No. Its body diode is optimized for PFC and hard-switching, not bidirectional conduction. The reverse recovery characteristics (trr = 240 ns, Qrr = 1.6 µC) and lack of dedicated SR control logic make it unsuitable for synchronous rectifier roles where low Qrr and fast tf are mandatory.
What is the recommended gate resistor value for 100 kHz hard-switching operation?
A 10 Ω gate resistor is recommended for 100 kHz hard-switching with a 1-A gate driver, balancing switching speed (tr ≈ 14 ns, tf ≈ 17 ns) and EMI suppression. Lower values increase dv/dt stress; higher values raise switching losses beyond 0.3 W at 100 kHz and 3.8 A.
IPD50R520CP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ CP
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 520mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 66W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-11
IPD50R520CP FAQ
1.How can I place an order for IPD50R520CP through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD50R520CP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD50R520CP reliable?
The price and inventory of IPD50R520CP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R520CP is usually 5 days.
3.What payment methods are accepted for IPD50R520CP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R520CP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD50R520CP?
IPD50R520CP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD50R520CP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD50R520CP?
For technical support, including IPD50R520CP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R520CP requirements.
6.How does Aetrix verify that IPD50R520CP is sourced from the original manufacturer or authorized distributors?
All IPD50R520CP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R520CP meets industry standards.
7.What is the process for return or replacement of IPD50R520CP?
All IPD50R520CP units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R520CP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD50R520CP part is unused and in its original packaging.
Return procedure for IPD50R520CP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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