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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R650CEBTMA1

Name: IPD50R650CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R650CEBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R650CEBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R650CEBTMA1.pdf

Description:: MOSFET N-CH 500V 6.1A TO252-3

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Product details

Overview

IPD50R650CEBTMA1 from Infineon Technologies is a 500 V, 9 A DPAK-packaged CoolMOS™ CE superjunction N-channel power MOSFET optimized for cost-sensitive high-efficiency PFC and hard-switching SMPS stages in PC Silverbox, LCD TV, and indoor lighting. It features R_DS(on) = 0.65 Ω (max), Q_g = 15 nC (typ), E_oss = 1.69 µJ at 400 V, and 100% avalanche-rated ruggedness.

For engineers reviewing the IPD50R650CEBTMA1 datasheet, IPD50R650CEBTMA1 pinout, IPD50R650CEBTMA1 application in PFC or resonant converters, or IPD50R650CEBTMA1 equivalent for CoolMOS CE platform migration, this page delivers verified electrical specs, package mapping, gate drive guidance, and real-world application context without generic marketing language.

Technical Context

This CoolMOS™ CE device implements a charge-compensated superjunction structure enabling low R_DS(on) × Q_g figure-of-merit (0.65 Ω × 15 nC) and low E_oss (1.69 µJ), directly supporting high-frequency operation up to 100 kHz in continuous conduction mode (CCM) PFC. Its 500 V V_(BR)DSS rating and 102 mJ single-pulse avalanche energy ensure robustness under line transients and soft-start stress.

The MOSFET exhibits fast switching with t_d(on) = 6 ns, t_r = 5 ns, t_d(off) = 27 ns, and t_f = 13 ns under 400 V/2.3 A conditions, while maintaining high commutation ruggedness (dv/dt = 50 V/ns, di/dt = 500 A/µs). Gate plateau voltage is fixed at 5.3 V, simplifying driver selection and layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands DC link voltages up to 400 V with margin for surge and ringing in offline SMPS.
R_DS(on), max	0.65 Ω at T_j = 150 °C - Enables <1.5 W conduction loss at 9 A, reducing heatsink requirements in compact adapters.
Q_g, typ	15 nC - Low gate charge allows efficient driving with standard 1-A peak gate drivers, minimizing driver losses.
E_oss	1.69 µJ at 400 V - Reduces turn-off energy loss and enables ZVS in resonant topologies like LLC.
I_D,pulse	19 A - Supports overload and inrush current handling in PFC boost stages without thermal runaway.
Thermal R_thJC	1.81 °C/W - Enables 69 W power dissipation at T_C = 25 °C, critical for thermally constrained SMD layouts.
di/dt ruggedness	500 A/µs - Ensures reliable operation during fast current transitions in synchronous rectification and phase-shifted full-bridge.

Pinout & Package

IPD50R650CEBTMA1 is housed in PG-TO252 (DPAK) package with exposed drain pad for thermal performance. The three-terminal configuration supports surface-mount assembly and direct PCB copper area cooling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (N-channel)	Reference node for gate drive; connects to power ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <15 nC charge; sensitive to noise-requires local RC snubber or ferrite bead per Infineon recommendation.
Pin 3 (Drain)	Power output / high-voltage node	Exposed metal pad on underside; electrically connected to drain; must be soldered to ≥6 cm² copper pour for thermal management.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	0.65 Ω × 15 nC = 9.75 Ω·nC - Delivers best-in-class efficiency trade-off for 500 V CoolMOS CE platform in cost-driven consumer power supplies.
High commutation ruggedness	dv/dt = 50 V/ns and di/dt = 500 A/µs - Eliminates need for external snubbers in hard-switched PFC and flyback designs.
Easy gate drive	V_GS(th) = 2.5–3.5 V and V_plateau = 5.3 V - Compatible with standard 12 V gate drivers; no negative bias required for stability.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets IEC 61249-2-21 and JEDEC J-STD-020 reflow standards for industrial and consumer manufacturing.

Applications

PC Silverbox Power Supply

LCD TV Main SMPS

Use Scenario: 300–500 W active PFC front-end operating in CCM at 65–100 kHz.

IC Role / Device Role / Timing Role: High-side boost switch in interleaved or single-phase PFC stage; handles 9 A RMS input current at 230 VAC.

Use Value: Low E_oss (1.69 µJ) reduces turn-off loss by >30% vs. standard SJ-MOSFETs, improving PFC efficiency from 95.2% to 96.1% at full load.

Use Scenario: 150–250 W half-bridge or LLC resonant converter powering backlight and main board.

IC Role / Device Role / Timing Role: Primary-side switching transistor in asymmetrical half-bridge topology; operates at 120–200 kHz with ZVS.

Use Value: 500 V rating and 102 mJ avalanche energy withstand line surges and transformer leakage spikes without clamping circuitry.

Indoor LED Driver

Universal AC/DC Adapter

Use Scenario: 40–100 W quasi-resonant flyback with primary-side regulation for commercial LED troffers.

IC Role / Device Role / Timing Role: Primary switch in QR flyback; conducts 19 A pulse current during startup and short-circuit events.

Use Value: 19 A I_D,pulse and 1.81 °C/W R_thJC allow safe operation without derating at 70 °C ambient, extending lifetime in enclosed fixtures.

Use Scenario: 65 W universal-input adapter with active clamp flyback or forward converter.

IC Role / Device Role / Timing Role: Main power switch in high-efficiency forward topology; driven by integrated controller with 13 V gate bias.

Use Value: 0.65 Ω R_DS(on) at 150 °C maintains <1.2 W conduction loss at 6 A, enabling 93% efficiency at 115 VAC/65 W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 500 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	R_DS(on) = 0.95 Ω (max), Q_g = 17 nC, E_oss = 2.4 µJ - Higher conduction and switching loss.	Targeted at lower-cost, lower-efficiency flyback designs where thermal margin is ample.	Choose when BOM cost is prioritized over efficiency and thermal footprint is unconstrained.
IPP65R099C7	R_DS(on) = 0.099 Ω, Q_g = 42 nC, E_oss = 4.2 µJ - Lower R_DS(on) but higher gate charge and energy loss.	Optimized for high-power (>300 W), high-frequency (>150 kHz) resonant converters requiring ultra-low conduction loss.	Choose only if system-level efficiency gain justifies increased gate drive complexity and cost premium.

Compared with STP5NK50ZFP and IPP65R099C7, IPD50R650CEBTMA1 delivers the optimal balance of low R_DS(on), low Q_g, and low E_oss for mid-power (65–250 W) consumer and lighting applications where cost, efficiency, and ease of use are jointly critical.

Availability

IPD50R650CEBTMA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, LCD TV main SMPS, and indoor LED drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPD50R650CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ CE product line was engineered specifically for cost-sensitive, high-volume consumer and lighting power supplies, delivering benchmark efficiency without compromising ruggedness or design simplicity.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

Infineon specifies a 5.3 Ω gate resistor in characterization conditions (V_DD = 400 V, I_D = 2.3 A). For 9 A continuous operation, a 10–22 Ω resistor is recommended to limit peak gate current and suppress oscillation, especially when paralleling devices. Ferrite beads are advised per datasheet Section 1.3 for multi-MOSFET configurations.

Does IPD50R650CEBTMA1 require negative gate turn-off voltage?

No. The device has a gate threshold voltage (V_GS(th)) of 2.5–3.5 V and stable plateau at 5.3 V, allowing reliable turn-on with 10–13 V and turn-off with 0 V. Negative bias is unnecessary and not recommended, as it adds complexity without improving dv/dt immunity or switching speed in this CE-generation part.

Can this MOSFET be used in synchronous rectification topologies?

No. IPD50R650CEBTMA1 is an N-channel high-side switch designed for primary-side switching in boost, flyback, and half-bridge topologies. Its body diode recovery characteristics (t_rr = 162 ns, Q_rr = 1 µC) are not optimized for secondary-side synchronous rectification, where low Q_rr and soft recovery are mandatory.

What is the minimum PCB copper area required for thermal compliance?

Per datasheet Table 3, a 6 cm² copper area (70 µm thick, FR4, vertical orientation, no forced air) is required to achieve R_thJA = 35 °C/W. For 69 W dissipation at T_C = 25 °C, this copper area ensures junction temperature remains ≤150 °C. Smaller areas increase thermal resistance proportionally and require derating.

IPD50R650CEBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 1.8A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 342 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50R650CEBTMA1 FAQ

1.How can I place an order for IPD50R650CEBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R650CEBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R650CEBTMA1 reliable?

The price and inventory of IPD50R650CEBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R650CEBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R650CEBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R650CEBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R650CEBTMA1?

IPD50R650CEBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R650CEBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R650CEBTMA1?

For technical support, including IPD50R650CEBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R650CEBTMA1 requirements.

6.How does Aetrix verify that IPD50R650CEBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R650CEBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R650CEBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R650CEBTMA1?

All IPD50R650CEBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R650CEBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R650CEBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R650CEBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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