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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R800CEAUMA1

Name: IPD50R800CEAUMA1
Brand: Infineon Technologies
SKU: IPD50R800CEAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R800CEAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R800CEAUMA1.pdf

Description:: CONSUMER

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD50R800CEAUMA1 from Infineon Technologies is a 500 V, 0.8 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 7.6 A continuous drain current at T_C = 25°C, 12.4 nC total gate charge, and 1.46 µJ output switching energy at 400 V - enabling compact, cost-sensitive lighting and adapter designs.

For engineers reviewing the IPD50R800CEAUMA1 datasheet, IPD50R800CEAUMA1 pinout, IPD50R800CEAUMA1 application, or IPD50R800CEAUMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high commutation ruggedness (500 A/µs di/dt), and ease of gate drive with 5.3 V plateau voltage - critical for stable operation in resonant and PWM topologies.

Technical Context

This CoolMOS™ CE device implements a superjunction structure to achieve superior conduction and switching loss trade-offs versus planar MOSFETs. Its 280 pF input capacitance and 23 pF output capacitance support fast switching at 400 V bus voltages while maintaining robust dv/dt immunity (50 V/ns).

The integrated body diode exhibits 158 ns reverse recovery time and 0.84 µC Q_rr, enabling reliable operation in discontinuous and quasi-resonant converters without external snubbing. Gate resistance is internally trimmed to 3 Ω, simplifying layout and reducing external gate resistor dependency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC-link applications with 25% margin for transient overvoltage
R_DS(on) max @ 150°C	0.80 Ω - enables low conduction loss in high-temperature PFC boost stages
Q_g typ	12.4 nC - allows efficient 100–300 kHz switching with standard gate drivers
E_oss @ 400 V	1.46 µJ - reduces turn-off loss and improves light-load efficiency in adapters
I_D cont @ T_C=25°C	7.6 A - sufficient for 65–100 W PFC and main switch applications
di/dt ruggedness	500 A/µs - ensures reliable operation during hard commutation in LLC and QR flyback
T_j max	150 °C - compatible with industrial-grade thermal design and reflow soldering (260 °C)

Pinout & Package

Package: PG-TO252 (DPAK), surface-mount, single-die MOSFET with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal / internal body diode cathode	Reference node for gate drive; connects to power ground in low-side configurations
Pin 2 (Drain)	Drain terminal / exposed pad connection	High-voltage switching node; electrically and thermally tied to PCB copper pour
Pin 3 (Gate)	Control terminal for channel modulation	High-impedance input requiring <5.3 V threshold; sensitive to ESD and ringing

Key Features

Feature	Design Value
Superjunction architecture	Enables 0.8 Ω R_DS(on) at 500 V - 40% lower conduction loss than comparable planar MOSFETs
Low E_oss & Q_g	1.46 µJ E_oss + 12.4 nC Q_g yields best-in-class FOM for cost-sensitive 65–150 W SMPS
High commutation ruggedness	500 A/µs di/dt rating ensures reliable hard-switching in PFC boost and LLC half-bridge
Halogen-free & Pb-free	Meets RoHS 2011/65/EU and JEDEC MSL Level 1 - suitable for automated SMT assembly
Optimized gate plateau	5.3 V plateau voltage stabilizes Miller region timing and reduces shoot-through risk

Applications

LED Driver Power Stage

PC Silverbox PFC Boost

Use Scenario: Constant-current LED driver operating from universal AC input (90–264 VAC) with active PFC and flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in boost PFC pre-regulator stage.

Use Value: Low R_DS(on) and E_oss reduce thermal stress and improve power density in enclosed luminaires.

Use Scenario: 300–500 W ATX PC power supply with continuous conduction mode (CCM) boost PFC.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved or single-phase boost converter.

Use Value: High dv/dt ruggedness (50 V/ns) prevents false turn-on during high-noise bus transients.

LCD TV Backlight Inverter

USB-C PD Adapter

Use Scenario: 100–200 W CCFL or LED backlight inverter with resonant half-bridge topology.

IC Role / Device Role / Timing Role: High-side switch in LLC resonant converter driving transformer primary.

Use Value: 158 ns t_rr and low Q_rr minimize dead-time losses and improve ZVS behavior.

Use Scenario: 65 W GaN-assisted USB-C PD adapter with hybrid flyback + active clamp.

IC Role / Device Role / Timing Role: Clamp switch or synchronous rectifier control MOSFET in secondary side.

Use Value: 7.6 A I_D and 0.8 Ω R_DS(on) support high peak currents in burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 1.2 Ω R_DS(on), 18 nC Q_g, TO-220FP package	Higher conduction loss and larger footprint; lacks CoolMOS™ commutation ruggedness	Prefer when legacy TO-220 layout reuse is required and efficiency targets are relaxed
IPP60R099C6	600 V, 0.099 Ω R_DS(on), 44 nC Q_g, TO-220 package	Lower R_DS(on) but higher Q_g and cost; not optimized for sub-100 W cost-sensitive lighting	Choose only if >200 W output and <0.1 Ω R_DS(on) are mandatory; avoid for adapter PFC

Compared with STP5NK50ZFP and IPP60R099C6, IPD50R800CEAUMA1 offers the optimal balance of low-cost DPAK packaging, 12.4 nC gate charge for simple drive, and proven ruggedness in lighting-grade PFC - making it the preferred choice for 65–120 W consumer power supplies where BOM cost and thermal headroom are tightly constrained.

Availability

IPD50R800CEAUMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC boost circuits, and LCD TV backlight inverters requiring stable component supply and long-term production continuity.

Supply support for IPD50R800CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and R&D infrastructure.

This part belongs to the CoolMOS™ CE family - engineered specifically for cost-driven, high-efficiency AC-DC conversion in consumer lighting and adapter applications, balancing performance, ruggedness, and manufacturability.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies a test condition using R_G = 5.3 Ω with 13 V gate drive. For stable operation without oscillation, a series gate resistor between 2.2 Ω and 10 Ω is recommended depending on layout parasitics. Values above 15 Ω increase switching losses significantly and may compromise dv/dt immunity in high-noise environments.

Can IPD50R800CEAUMA1 be paralleled in high-current PFC designs?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each MOSFET's gate line to suppress oscillation. The datasheet explicitly recommends this approach for paralleling, due to inherent parameter spread and gate loop inductance sensitivity. Matching R_DS(on) within ±10% and symmetric PCB routing are also mandatory.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is fully specified for 0 V to +13 V gate drive, with V_GS = −20 V to +20 V absolute maximum rating. A negative turn-off voltage is unnecessary and not recommended - the 5.3 V gate plateau and low threshold voltage (2.5–3.5 V) ensure clean turn-off with zero-volt gate drive.

Is the body diode suitable for synchronous rectification?

No. While the body diode has characterized t_rr (158 ns) and Q_rr (0.84 µC), it is not optimized for bidirectional conduction. For synchronous rectification, use a dedicated low-V_F Schottky or logic-level MOSFET; this device's body diode is intended only for freewheeling in hard-switched topologies.

IPD50R800CEAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 1.5A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 12.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-2

IPD50R800CEAUMA1 FAQ

1.How can I place an order for IPD50R800CEAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R800CEAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R800CEAUMA1 reliable?

The price and inventory of IPD50R800CEAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R800CEAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R800CEAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R800CEAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R800CEAUMA1?

IPD50R800CEAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R800CEAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R800CEAUMA1?

For technical support, including IPD50R800CEAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R800CEAUMA1 requirements.

6.How does Aetrix verify that IPD50R800CEAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R800CEAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R800CEAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R800CEAUMA1?

All IPD50R800CEAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R800CEAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R800CEAUMA1 part is unused and in its original packaging.

Return procedure for IPD50R800CEAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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