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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R800CEBTMA1

Name: IPD50R800CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R800CEBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R800CEBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R800CEBTMA1.pdf

Description:: MOSFET N CH 500V 5A TO252

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Product details

Overview

IPD50R800CEBTMA1 from Infineon Technologies is a 500 V, 0.8 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency, cost-sensitive hard-switching and resonant PFC and PWM stages in lighting and adapter applications. It delivers 7.6 A continuous drain current at T_C = 25°C, 12.4 nC total gate charge, and 1.46 µJ output energy at 400 V.

For engineers reviewing the IPD50R800CEBTMA1 datasheet, IPD50R800CEBTMA1 pinout, IPD50R800CEBTMA1 application, or IPD50R800CEBTMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high commutation ruggedness (500 A/µs di/dt), ease of gate drive (5.3 V plateau voltage), and qualification for standard-grade industrial and consumer use.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling significantly lower conduction and switching losses than planar MOSFETs at 500 V rating. Its 280 pF input capacitance and 23 pF output capacitance support fast switching with controlled EMI, while the 6.2 ns turn-on delay and 26 ns turn-off delay reflect optimized internal charge distribution for hard-switched topologies.

The integrated body diode exhibits 0.83 V forward voltage at 1.9 A and 158 ns reverse recovery time under 100 A/µs di/dt - characteristics critical for PFC boost stage efficiency and reliability. Thermal resistance of 2.07 °C/W (junction-to-case) enables robust thermal management on minimal PCB copper areas.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC-link operation with 25% margin for transient overvoltage in offline SMPS.
R_DS(on) max @ 150°C	0.80 Ω - ensures <1.2 W conduction loss at 7.6 A ID, enabling compact heatsink design in space-constrained adapters.
Q_g typ	12.4 nC - enables efficient gate driving with standard 1–2 A peak drivers and reduces driver power dissipation.
E_oss @ 400 V	1.46 µJ - lowers switching loss in high-frequency PFC and LLC resonant converters operating above 100 kHz.
I_D,pulse	15.5 A - supports short-term overload conditions in LED driver surge protection and inrush limiting circuits.
dV/dt ruggedness	50 V/ns - prevents spurious turn-on in high-noise bridge-leg configurations without additional snubbing.
Thermal R_thJC	2.07 °C/W - allows direct thermal coupling to PCB copper pour, eliminating need for mechanical heatsinks in ≤30 W designs.

Pinout & Package

IPD50R800CEBTMA1 is housed in PG-TO252 (DPAK) package with exposed drain pad for thermal and electrical connection. The three-terminal configuration places Drain on Pin 2 (center tab), Gate on Pin 1 (left lead), and Source on Pin 3 (right lead), matching JEDEC TO-252 outline and enabling drop-in replacement in existing DPAK footprints.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 0–13 V logic-level gate drive; 3 Ω internal gate resistance simplifies layout and dampens ringing.
Pin 2 (Drain)	High-voltage power input	Connected to DC-link or transformer primary; exposed metal pad provides low-inductance, low-thermal-resistance path to PCB ground plane.
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; must be routed with minimal inductance to avoid shoot-through during switching transitions.

Key Features

Feature	Design Value
Ultra-low figure-of-merit (R_DS(on) × Q_g)	0.8 Ω × 12.4 nC = 9.92 Ω·nC - enables >94% efficiency in 25–65 W flyback and PFC stages at 65–130 kHz.
High commutation ruggedness	500 A/µs di/dt capability - sustains reliable operation during fast inductive turn-off without oscillation or failure in boost and half-bridge topologies.
Easy gate drive	5.3 V gate plateau voltage - reduces sensitivity to gate driver overshoot and simplifies level-shifting in high-side configurations.
Pb-free plating & halogen-free mold compound	RoHS-compliant construction - meets IPC-J-STD-020 moisture sensitivity level (MSL) 1 and supports lead-free reflow up to 260 °C.
Standard-grade qualification	Rated for −55 °C to +150 °C operation - suitable for indoor lighting, AC-DC adapters, and PC silverbox applications without automotive or extended-temp requirements.

Applications

LED Indoor Lighting Driver

USB-C PD Adapter Primary Switch

Use Scenario: High-efficiency 20–40 W constant-current buck-boost LED driver operating from 85–265 VAC input with active PFC and quasi-resonant flyback secondary.

IC Role / Device Role / Timing Role: Main switching transistor in boost PFC pre-regulator and QR flyback primary side, handling 400 V DC-link and 65–100 kHz switching.

Use Value: Low E_oss (1.46 µJ) and R_DS(on) (0.8 Ω) reduce thermal stress and enable fanless enclosure design while meeting ENERGY STAR® Tier 2 efficiency targets.

Use Scenario: 30–65 W universal-input USB-C Power Delivery adapter with dual-stage architecture: front-end PFC followed by isolated flyback converter.

IC Role / Device Role / Timing Role: Primary-side switch in both continuous-conduction-mode (CCM) PFC and high-frequency flyback stages, driven by dedicated controller ICs.

Use Value: 12.4 nC Q_g and 5.3 V plateau allow stable operation with low-cost gate drivers; 50 V/ns dV/dt rating eliminates need for external gate clamping in noisy shared PCB layouts.

PC Silverbox SMPS

LCD TV Backlight Inverter

Use Scenario: 250–350 W ATX-compatible desktop power supply using interleaved PFC and LLC resonant half-bridge for main 12 V rail generation.

IC Role / Device Role / Timing Role: Upper switch in interleaved PFC boost legs, operating at 60–100 kHz with 400 V DC-link and duty cycle modulation.

Use Value: 7.6 A I_D and 15.5 A I_D,pulse support peak load handling during CPU/GPU transients; 2.07 °C/W R_thJC enables direct mounting to aluminum heatsink via thermal pad.

Use Scenario: 120–200 W CCFL or edge-lit LED backlight in 32–55 inch LCD TVs, requiring high-reliability, low-EMI primary-side switching.

IC Role / Device Role / Timing Role: Main switch in half-bridge or push-pull inverter driving high-voltage transformer for CCFL ignition or LED string regulation.

Use Value: 0.83 V V_SD and 158 ns t_rr minimize body diode conduction loss during dead-time, improving efficiency and reducing audible noise in transformer excitation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 1.2 Ω R_DS(on), 14.5 nC Q_g, TO-220FP package - higher conduction loss and larger footprint.	Less suited for high-density SMD designs; requires heatsink mounting and lacks MSL-1 reflow compatibility.	Prefer when legacy through-hole assembly or higher pulse current (20 A) is required over thermal density.
FDPF5N50NZ	500 V, 1.4 Ω R_DS(on), 11.5 nC Q_g, TO-220FP - lower Q_g but significantly higher R_DS(on) and no dV/dt rating published.	Higher conduction loss limits use to ≤15 W applications; unverified ruggedness in hard-switched PFC.	Consider only for low-cost, low-power (<12 W) adapters where gate drive simplicity outweighs efficiency demands.

Compared with STP5NK50ZFP and FDPF5N50NZ, IPD50R800CEBTMA1 offers superior power density (DPAK vs TO-220FP), lower R_DS(on) × Q_g FOM, and documented 50 V/ns dV/dt immunity - making it the preferred choice for thermally constrained, high-efficiency consumer power supplies.

Availability

IPD50R800CEBTMA1 is available at Aetrix Electronics and suitable for LED indoor lighting drivers, USB-C PD adapters, and PC silverbox SMPS requiring stable component supply, RoHS compliance, and MSL-1 reflow capability.

Supply support for IPD50R800CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IPD50R800CEBTMA1 belongs to the CoolMOS™ CE family - a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting power supplies without compromising ruggedness or manufacturability.

FAQ

Is IPD50R800CEBTMA1 suitable for paralleling in high-current PFC designs?

Yes - the datasheet explicitly recommends gate ferrite beads or separate totem-pole drivers for MOSFET paralleling to ensure balanced dynamic current sharing. Its matched threshold voltage (2.5–3.5 V) and low gate resistance (3 Ω) support stable parallel operation when layout symmetry and gate drive impedance are carefully controlled.

What is the maximum recommended gate resistor value for hard-switched PFC operation?

For 65–100 kHz hard-switched PFC with V_GS = 13 V drive, a 5.3 Ω gate resistor is used in the datasheet's test conditions (td(on) = 6.2 ns, td(off) = 26 ns). Increasing beyond 10 Ω risks excessive switching loss; values below 3 Ω may cause gate ringing due to PCB inductance interacting with the device's 3 Ω internal R_G.

Does IPD50R800CEBTMA1 have avalanche capability, and how is it rated?

Yes - it is fully rated for repetitive and single-pulse avalanche: E_AS = 83 mJ (single pulse, I_D = 1.9 A, V_DD = 50 V) and E_AR = 0.13 mJ (repetitive, same conditions). This enables robust operation during output short-circuit or transformer saturation events without external clamping in well-designed flyback converters.

Can IPD50R800CEBTMA1 replace older CoolMOS™ C6 or C7 devices in existing designs?

No - while all belong to Infineon's CoolMOS™ family, CE-series devices feature different gate charge profiles (e.g., lower Q_gd/Q_g ratio) and optimized body diodes. Direct substitution may cause increased EMI or reduced efficiency; layout and gate drive tuning are required, and validation per IEC/UL safety standards is mandatory before deployment.

IPD50R800CEBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 1.5A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 12.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50R800CEBTMA1 FAQ

1.How can I place an order for IPD50R800CEBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R800CEBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R800CEBTMA1 reliable?

The price and inventory of IPD50R800CEBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R800CEBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R800CEBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R800CEBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R800CEBTMA1?

IPD50R800CEBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R800CEBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R800CEBTMA1?

For technical support, including IPD50R800CEBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R800CEBTMA1 requirements.

6.How does Aetrix verify that IPD50R800CEBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R800CEBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R800CEBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R800CEBTMA1?

All IPD50R800CEBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R800CEBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R800CEBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R800CEBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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