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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R950CEBTMA1

Name: IPD50R950CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R950CEBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R950CEBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R950CEBTMA1.pdf

Description:: MOSFET N-CH 500V 4.3A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD50R950CEBTMA1 from Infineon Technologies is a 500 V, 0.95 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency PFC and hard-switching SMPS stages in consumer and lighting applications. It delivers 6.6 A continuous drain current at T_C = 25°C, 10.5 nC total gate charge, and 1.28 µJ output energy at 400 V.

For engineers reviewing the IPD50R950CEBTMA1 datasheet, IPD50R950CEBTMA1 pinout, IPD50R950CEBTMA1 application, or IPD50R950CEBTMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high commutation ruggedness, ease of gate drive, and qualification for standard-grade industrial and consumer power supplies.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling significantly reduced conduction and switching losses versus planar MOSFETs. Its 500 V V_(BR)DSS, 2.5–3.5 V gate threshold voltage, and 5.4 V gate plateau support stable operation in discontinuous and continuous conduction mode PFC boost stages.

The MOSFET features integrated fast-recovery body diode with 140 ns t_rr, 0.7 µC Q_rr, and 8.5 A I_RRM, enabling robust performance in resonant topologies. Thermal resistance R_thJC is 2.35 °C/W, supporting high-power-density designs on minimal PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands DC link voltages up to 400 V in universal-input PFC and SMPS designs
R_DS(on), max	0.95 Ω @ T_j = 150°C - Enables low conduction loss in 6.6 A continuous current paths
Q_g, typ	10.5 nC - Low gate drive power requirement; compatible with standard PWM controllers
E_oss @ 400 V	1.28 µJ - Reduces turn-off loss in high-frequency hard-switched converters
t_r/t_f	4.9 ns / 19.5 ns - Supports >100 kHz switching without excessive EMI or shoot-through risk
di/dt rating	500 A/µs - Sustains fast current transients during ZVS/ZCS transitions in LLC and phase-shifted full-bridge
R_thJC	2.35 °C/W - Allows thermal design with compact heatsinking on DPAK-mount PCBs

Pinout & Package

IPD50R950CEBTMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal and electrical performance. Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source - confirmed per Infineon datasheet Rev. 2.3, page 3.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 0–13 V logic-level gate drive; 3 Ω internal gate resistance limits ringing
Pin 2 (Drain)	High-side power node	Connected to DC bus or transformer primary; electrically tied to exposed thermal pad
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	Enables best-in-class efficiency in cost-sensitive 65–150 W adapters and LED drivers
High commutation ruggedness	Withstands 68 mJ single-pulse avalanche energy and 50 V/ns dv/dt without failure
Integrated fast body diode	140 ns t_rr and 0.7 µC Q_rr reduce dead-time losses and EMI in bridge configurations
Pb-free & halogen-free construction	Meets RoHS and JEDEC MSL Level 1 reflow requirements for automated SMT assembly

Applications

LED Driver Power Stage

PC Silverbox PFC Boost

Use Scenario: Constant-current buck-boost LED driver for indoor architectural lighting with universal AC input.

IC Role / Device Role / Timing Role: Main switch in active PFC + DC-DC stage; operates at 65–100 kHz with CCM control.

Use Value: 0.95 Ω R_DS(on) and 1.28 µJ E_oss enable >93% system efficiency at 100 W with minimal heatsink.

Use Scenario: Active boost PFC front-end in desktop PC power supply meeting 80 PLUS Bronze.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter.

Use Value: 500 V rating and 6.6 A I_D support 300 W output with <10% THD and >0.95 PF across 90–264 VAC.

LCD TV Backlight Inverter

Adapter Primary Switch

Use Scenario: Resonant half-bridge inverter driving CCFL or edge-lit LED backlight in 32–55″ LCD TVs.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter operating at 200–500 kHz.

Use Value: 500 V V_(BR)DSS and 500 A/µs di/dt rating ensure reliable zero-voltage switching under load transients.

Use Scenario: Primary-side switch in 36 W universal-input flyback adapter for set-top boxes.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in quasi-resonant (QR) flyback topology.

Use Value: 10.5 nC Q_g allows direct drive from UC384x-family controllers without external buffer.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 1.2 Ω R_DS(on), 16 nC Q_g, TO-220FP package	Higher conduction loss and gate drive demand; requires larger heatsink	Preferred where through-hole mounting and legacy footprint compatibility are required
IPP60R099C6	600 V, 0.099 Ω R_DS(on), 44 nC Q_g, TO-220 package	Lower R_DS(on) but higher Q_g and cost; over-specified voltage rating for 400 V bus	Selected when higher current (>12 A) and lower conduction loss outweigh switching loss and layout constraints

Compared with STP5NK50ZFP and IPP60R099C6, IPD50R950CEBTMA1 offers optimal balance of low R_DS(on), moderate Q_g, DPAK thermal performance, and cost-making it ideal for space-constrained, efficiency-critical 6–12 A consumer power stages.

Availability

IPD50R950CEBTMA1 is available at Aetrix Electronics and suitable for LED drivers, PC silverbox PFC stages, LCD TV backlight inverters, and universal-input adapters requiring stable component supply and consistent parametric performance across production lots.

Supply support for IPD50R950CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

The CoolMOS™ CE product line targets cost-sensitive, high-efficiency AC-DC conversion in consumer and lighting markets-delivering superjunction performance with simplified gate drive and robust ruggedness.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

Infineon recommends R_G ≤ 10 Ω for stable turn-on and turn-off behavior. At 5.3 Ω (test condition), td(on)/tr and td(off)/tf meet datasheet specs. Higher values increase switching time and loss; lower values may cause gate oscillation due to PCB inductance and the device's 3 Ω intrinsic R_G.

Can IPD50R950CEBTMA1 be paralleled in high-current PFC designs?

Yes, but with precautions: use individual ferrite beads (≥100 Ω @ 100 MHz) on each gate line and matched gate resistors to suppress oscillation. Ensure symmetrical PCB layout, identical source inductance, and thermal coupling to avoid current imbalance above 10 A total RMS current.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has 140 ns t_rr and 0.7 µC Q_rr, making it unsuitable for synchronous rectification above 50 kHz. It is designed for freewheeling and commutation in PFC and resonant topologies, not for low-loss reverse conduction.

What is the safe operating area (SOA) limitation at T_C = 100°C?

At T_C = 100°C, the SOA is limited to 4.2 A continuous drain current (per Table 2) and 12.8 A pulsed current (tp < 10 µs). The device remains within SOA up to 100 V V_DS at 4.2 A, but derates linearly above that voltage per the datasheet's SOA curves (Fig. 2 & 3).

IPD50R950CEBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 1.2A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 231 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50R950CEBTMA1 FAQ

1.How can I place an order for IPD50R950CEBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R950CEBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R950CEBTMA1 reliable?

The price and inventory of IPD50R950CEBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R950CEBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R950CEBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R950CEBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R950CEBTMA1?

IPD50R950CEBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R950CEBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R950CEBTMA1?

For technical support, including IPD50R950CEBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R950CEBTMA1 requirements.

6.How does Aetrix verify that IPD50R950CEBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R950CEBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R950CEBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R950CEBTMA1?

All IPD50R950CEBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R950CEBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R950CEBTMA1 part is unused and in its original packaging.

Return procedure for IPD50R950CEBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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