Infineon Technologies IPD600N25N3GBTMA1

Overview

IPD600N25N3GBTMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO252-3 package, rated for 250 V V_DS, 25 A continuous drain current at T_C = 25 °C, and 60 mΩ max R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, low gate charge (Q_g = 22–29 nC), and is optimized for high-frequency switching in DC-DC converters and synchronous rectification stages.

For engineers reviewing the IPD600N25N3GBTMA1 datasheet, IPD600N25N3GBTMA1 pinout, IPD600N25N3GBTMA1 application, or IPD600N25N3GBTMA1 equivalent, key selection criteria include its 250 V blocking voltage, 60 mΩ on-resistance at 10 V gate drive, 1.1 K/W thermal resistance (junction-to-case), reverse diode forward voltage of 0.9–1.2 V at 25 A, and avalanche energy rating of 210 mJ (single pulse).

Technical Context

This OptiMOSTM3 power transistor uses trench-gate silicon technology to achieve a low figure-of-merit (gate charge × R_DS(on)). Its 250 V V_BR(DSS) supports industrial and telecom power supplies operating up to 200 V bus rails. The device integrates a robust body diode with t_rr = 114 ns and Q_rr = 700 nC, enabling efficient synchronous rectification without external Schottky diodes.

Thermal design is supported by a low R_thJC of 1.1 K/W and JEDEC-qualified reliability for 175 °C operation. Dynamic parameters-including C_iss = 1770–2350 pF, C_oss = 101–134 pF, and t_d(on)/t_r/t_d(off)/t_f = 10/10/22/8 ns-enable stable operation in hard-switched topologies above 300 kHz.

Key Specifications

Pinout & Package

IPD600N25N3GBTMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP25NM50FP and IRF6644TRPBF, IPD600N25N3GBTMA1 uniquely balances 250 V capability, 60 mΩ on-resistance, and 175 °C operation-making it optimal for high-efficiency, thermally constrained 200 V-class DC-DC and rectifier designs where both voltage margin and conduction loss matter.

Availability

IPD600N25N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifiers requiring stable component supply and long-term production continuity.

Supply support for IPD600N25N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM3 family-designed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial power supplies.

FAQ

Is IPD600N25N3GBTMA1 suitable for gate driving with 5 V logic?

No. Its gate threshold voltage range is 2–4 V, but full enhancement requires ≥10 V V_GS to achieve rated R_DS(on) ≤60 mΩ. Driving with only 5 V results in significantly higher on-resistance (>200 mΩ) and excessive conduction loss. A dedicated 10–12 V gate driver is required for specified performance.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies optimal thermal performance with a 6 cm² copper area (single layer, 70 µm thick) on FR4 PCB, mounted vertically in still air. This achieves R_thJA = 50 K/W. Reducing copper area below 6 cm² increases junction temperature rise disproportionately-especially above 10 A continuous current.

Does IPD600N25N3GBTMA1 have avalanche ruggedness rated for repetitive operation?

No. The 210 mJ E_AS rating is for single-pulse conditions only (I_D = 25 A, R_GS = 25 Ω). The device is not characterized for repetitive avalanche stress. System design must avoid repeated inductive switching events exceeding safe operating area limits using snubbers or clamping circuits.

Can the integrated body diode replace an external Schottky diode in synchronous rectification?

Yes-within defined limits. At 25 A and 25 °C, V_SD = 0.9–1.2 V and t_rr = 114 ns enable efficient replacement of 45 V Schottky diodes in 12–48 V output converters switching ≤500 kHz. However, at elevated temperature or high di/dt, V_SD rises and Q_rr increases-requiring careful layout and timing control.