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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R1K0CEATMA1

Name: IPD60R1K0CEATMA1
Brand: Infineon Technologies
SKU: IPD60R1K0CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R1K0CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R1K0CEATMA1.pdf

Description:: MOSFET N-CH 600V 4.3A TO252-3

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Product details

Overview

IPD60R1K0CEATMA1 from Infineon Technologies is a 600 V, 1.0 Ω (max) R_DS(on), 6.8 A continuous drain current CoolMOS™ CE superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for high-efficiency PFC and hard-switching SMPS in consumer and lighting applications.

For engineers reviewing the IPD60R1K0CEATMA1 datasheet, IPD60R1K0CEATMA1 pinout, IPD60R1K0CEATMA1 application, or IPD60R1K0CEATMA1 equivalent, key selection criteria include its 13 nC total gate charge, 1.3 µJ E_oss at 400 V, 50 V/ns dv/dt ruggedness, and 2.06 °C/W R_thJC thermal resistance for thermally constrained designs.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) and reduced switching losses while maintaining robust commutation behavior. Its 600 V V_(BR)DSS, 2.5–3.5 V V_GS(th), and 5.4 V gate plateau voltage support stable gate drive in 12 V systems.

The MOSFET features a fast-recovery body diode with 220 ns t_rr, 1.5 µC Q_rr, and 12 A I_rrm, enabling reliable operation in discontinuous conduction mode (DCM) PFC and resonant topologies without external diode snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus with 25% margin for surge and ringing in offline SMPS
R_DS(on) max	1.00 Ω @ T_j = 150°C - enables low conduction loss in 6.8 A continuous hard-switching stages
Q_g typ	13 nC - reduces gate driver power requirement and simplifies 12 V gate drive design
E_oss @ 400 V	1.3 µJ - lowers turn-off energy loss in high-frequency PWM and resonant converters
t_r/t_f	8 ns / 13 ns - supports >200 kHz switching with controlled EMI and minimal dead-time penalty
R_thJC	2.06 °C/W - allows 61 W power dissipation at T_C = 25°C, critical for compact heatsink layouts
dv/dt ruggedness	50 V/ns - ensures reliable operation under fast voltage transients in high-side configurations

Pinout & Package

IPD60R1K0CEATMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain tab for thermal enhancement and mechanical anchoring. The package complies with JEDEC MO-236AA and RoHS/REACH requirements.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring <13 nC charge; low 16 Ω gate resistance enables stable drive without excessive ringing
Pin 2	Drain	Main high-voltage power terminal; connected to exposed metal tab for low-inductance, low-thermal-resistance heat path
Pin 3	Source	Reference node for gate drive and current sensing; ties to PCB ground plane for EMI control

Key Features

Feature	Design Value
Superjunction architecture	Delivers 1.0 Ω R_DS(on) at 600 V, reducing conduction loss by ~35% vs. planar MOSFETs in same package
Low E_oss and Q_g	1.3 µJ E_oss + 13 nC Q_g minimizes total switching loss in 100–300 kHz PFC and LLC designs
High commutation ruggedness	46 mJ single-pulse avalanche energy and 50 V/ns dv/dt rating ensure reliability in unclamped inductive switching
Optimized body diode	220 ns t_rr and soft recovery reduce voltage overshoot and EMI in bridge-leg and synchronous rectifier use
Pb-free & halogen-free	Meets IPC-J-STD-609A Class 1 and IEC 61249-2-21 for lead-free assembly and environmental compliance

Applications

LED Driver Power Stage

PC Silverbox PFC Circuit

Use Scenario: Constant-current LED driver operating from universal AC input with active PFC front-end.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage, switching at 65–100 kHz with DCM/CCM boundary control.

Use Value: 1.0 Ω R_DS(on) and 13 nC Q_g enable >95% efficiency at 100 W output while meeting EN61000-3-2 Class C harmonics limits.

Use Scenario: 300–500 W ATX power supply with two-stage conversion: boost PFC followed by LLC resonant DC-DC.

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) boost PFC controller reference design.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high dV/dt transitions, eliminating need for negative gate bias.

LCD TV Backlight Inverter

Indoor Lighting Ballast

Use Scenario: High-voltage CCFL or LED backlight inverter using half-bridge topology with 30–60 kHz operation.

IC Role / Device Role / Timing Role: Low-side switch in resonant half-bridge driving transformer primary winding.

Use Value: 2.06 °C/W R_thJC and 61 W P_tot allow direct mounting on small aluminum heatsinks, reducing board area by 25% vs. TO-220 alternatives.

Use Scenario: Dimmable LED ballast for commercial downlights operating from 230 V AC mains.

IC Role / Device Role / Timing Role: Main switching transistor in flyback or buck-boost topology with TRIAC dimming interface.

Use Value: 150 °C T_j rating and halogen-free mold compound support long-life operation in enclosed, thermally stressed fixtures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPU60R1K0CE	Same die, PG-TO251 (IPAK) package with bent leads; R_thJC = 2.06 °C/W identical, but lower R_thJA due to leadframe geometry	Better suited for through-hole reflow or mixed-technology boards where DPAK footprint is unavailable	Select when manual assembly, wave soldering, or legacy board layout requires gull-wing leads
STP60N1F10	600 V, 1.0 Ω R_DS(on), but higher Q_g (22 nC) and E_oss (2.7 µJ); no specified dv/dt rating	Acceptable in low-frequency (<65 kHz), cost-sensitive lighting drivers where switching loss is secondary	Choose only if gate drive capability exceeds 22 nC and system EMI filtering budget accommodates higher ringing

Compared with IPU60R1K0CE, IPD60R1K0CEATMA1 offers identical electrical performance in a surface-mount DPAK package for automated assembly, while STP60N1F10 trades higher switching losses for broader distributor availability-making IPD60R1K0CEATMA1 optimal for high-efficiency, high-volume consumer power supplies.

Availability

IPD60R1K0CEATMA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, LED driver modules, LCD TV backlight inverters, and indoor lighting ballasts requiring stable component supply across multi-year production cycles.

Supply support for IPD60R1K0CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The CoolMOS™ CE product line targets cost-sensitive, high-efficiency AC-DC conversion in consumer and lighting applications, balancing low R_DS(on), fast switching, and ease of drive without requiring complex gate networks.

FAQ

What is the maximum continuous drain current for IPD60R1K0CEATMA1 at 100°C case temperature?

The maximum continuous drain current is 4.3 A at T_C = 100°C, derated from 6.8 A at T_C = 25°C per the SOA curve and thermal resistance of 2.06 °C/W. This value assumes adequate PCB copper area and still-air conditions; forced airflow or heatsinking extends usable current capacity.

Does IPD60R1K0CEATMA1 require a negative gate voltage for reliable turn-off?

No. IPD60R1K0CEATMA1 has a gate threshold voltage range of 2.5–3.5 V and exhibits no spurious turn-on up to 50 V/ns dv/dt, so standard 0 V to 12 V gate drive is sufficient. Negative bias is unnecessary unless operating in extreme noise environments exceeding datasheet-rated dv/dt.

Can IPD60R1K0CEATMA1 be paralleled with identical units?

Yes, but gate-source ferrite beads (e.g., 100 Ω @ 100 MHz) are recommended on each gate to suppress oscillation and ensure current sharing. Layout symmetry, matched trace lengths, and Kelvin source connections are mandatory; mismatched thermal paths will cause current imbalance above 3 A per device.

What is the safe operating area (SOA) limitation at 400 V drain-source voltage?

At V_DS = 400 V and T_C = 25°C, the maximum pulsed drain current is 1.8 A for 100 µs (DC limit is 0.45 A). This is defined by the SOA curve in Figure 2 of the datasheet and must be verified against actual board thermal performance, as PCB copper area directly impacts pulse current capability.

IPD60R1K0CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R1K0CEATMA1 FAQ

1.How can I place an order for IPD60R1K0CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R1K0CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R1K0CEATMA1 reliable?

The price and inventory of IPD60R1K0CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R1K0CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R1K0CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R1K0CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R1K0CEATMA1?

IPD60R1K0CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R1K0CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R1K0CEATMA1?

For technical support, including IPD60R1K0CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R1K0CEATMA1 requirements.

6.How does Aetrix verify that IPD60R1K0CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R1K0CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R1K0CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R1K0CEATMA1?

All IPD60R1K0CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R1K0CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R1K0CEATMA1 part is unused and in its original packaging.

Return procedure for IPD60R1K0CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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