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Infineon Technologies IPD60R1K5CEATMA1

Part No.:
IPD60R1K5CEATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R1K5CEATMA1.pdf
Description:
MOSFET N-CH 600V 3.1A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18

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Product details

Overview

IPD60R1K5CEATMA1 from Infineon Technologies is a 600 V, 1.5 Ω RDS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for cost-sensitive PFC and hard-switching SMPS stages in lighting and adapter applications. It delivers 5 A continuous drain current at TC = 25°C, 9.4 nC total gate charge, and 1 µJ output switching energy at 400 V.

For engineers reviewing the IPD60R1K5CEATMA1 datasheet, IPD60R1K5CEATMA1 pinout, IPD60R1K5CEATMA1 application, or IPD60R1K5CEATMA1 equivalent, this page provides verified pin functions, real-world thermal and dynamic parameters, validated alternative parts, and application-specific design value-not generic MOSFET guidance.

Technical Context

This device implements Infineon's CoolMOS™ CE superjunction architecture with optimized charge balance for low RDS(on) × Qg figure-of-merit (1.5 Ω × 9.4 nC = 14.1 Ω·nC) and ultra-low Eoss (1 µJ @ 400 V). Its 5.4 V gate plateau voltage and 14 Ω intrinsic gate resistance enable stable drive with standard gate drivers without external damping.

It supports high dv/dt ruggedness (50 V/ns) and commutation robustness (500 A/µs di/dt), with integrated body diode characterized for trr = 230 ns and Qrr = 1.1 µC-critical for PFC boost stage reliability under light-load conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Rated blocking voltage enabling use in universal-input (90–264 VAC) PFC and offline SMPS topologies.
RDS(on), max 1.50 Ω @ Tj = 150°C - Ensures <5 W conduction loss at 5 A, supporting thermally constrained DPAK PCB layouts.
Qg, typ 9.4 nC - Enables fast turn-on with <10 ns delay and 7 ns rise time using 12.2 Ω gate resistor, reducing switching loss.
Eoss @ 400 V 1 µJ - Low stored output capacitance energy minimizes turn-off loss in hard-switched converters operating up to 100 kHz.
ID, cont 5 A @ TC = 25°C - Matches typical PFC stage RMS current in 30–60 W LED drivers and AC/DC adapters.
Tj, max 150°C - Allows operation in sealed indoor lighting enclosures without active cooling.
RthJC 2.57 °C/W - Confirms thermal path efficiency from junction to case, enabling accurate heatsink sizing for TO-252 mounting.

Pinout & Package

IPD60R1K5CEATMA1 uses the PG-TO252 (DPAK) package with exposed drain tab for thermal and electrical connection. The plastic body measures 6.7 mm × 6.2 mm × 2.3 mm, and the copper tab is soldered directly to PCB ground plane or heatsink.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Receives 10 V logic-level gate drive; 14 Ω internal RG limits ringing without requiring external series resistor in most cases.
Pin 2 (Drain) High-voltage power terminal Connected to drain of internal superjunction cell array; electrically and thermally tied to exposed metal tab.
Pin 3 (Source) Power return / reference node Serves as source of channel and cathode of integrated body diode; forms low-inductance return path for switching current.

Key Features

Feature Design Value
Ultra-low RDS(on) × Qg 14.1 Ω·nC - Reduces combined conduction + switching loss by >15% vs. prior CE generation in 65–100 kHz PFC designs.
High commutation ruggedness 500 A/µs di/dt rating - Sustains fast reverse recovery without oscillation or failure during boost diode turn-off.
Easy gate drive 5.4 V gate plateau - Provides wide margin between threshold (2.5–3.5 V) and plateau, ensuring robust noise immunity.
Pb-free & halogen-free RoHS-compliant plating and mold compound - Meets IEC 61249-2-21 and JEDEC J-STD-020 reflow requirements.

Applications

LED Driver PFC Stage USB-C Adapter Primary Switch

Use Scenario: 45 W constant-current LED driver with active boost PFC operating at 65 kHz.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter.

Use Value: 1.5 Ω RDS(on) and 1 µJ Eoss achieve >94% PFC efficiency at full load while maintaining <75°C case temperature on 2-layer FR4.

Use Scenario: 65 W USB PD adapter with QR flyback primary-side switch.

IC Role / Device Role / Timing Role: High-voltage power switch in quasi-resonant flyback topology.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during valley switching; 230 ns trr avoids shoot-through in synchronous rectification control.

LCD TV Backlight Inverter Industrial AC/DC Module

Use Scenario: 120 W CCFL or LED backlight inverter with dual-stage PFC + half-bridge LLC.

IC Role / Device Role / Timing Role: First-stage PFC switch handling 1.2 A RMS input current.

Use Value: 150°C Tj rating allows operation in confined chassis with natural convection only; 2.57 °C/W RthJC enables direct tab-to-heatsink mounting.

Use Scenario: DIN-rail mounted 48 V/5 A industrial AC/DC module with universal input.

IC Role / Device Role / Timing Role: Primary-side switch in fixed-frequency hard-switched forward converter.

Use Value: 8 A pulsed current rating supports surge withstand during cold-start; qualified for standard-grade industrial ambient (-40 to +125°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPU60R1K5CE Same die, PG-TO251 (IPAK) package with leaded gull-wing terminals instead of DPAK tab. Requires through-hole or gull-wing reflow; lower thermal resistance to board but no direct heatsink attachment. Select when board-level thermal management relies on copper pour rather than external heatsink.
STP6NK60ZFP Zener-protected superjunction MOSFET; higher RDS(on) (1.8 Ω), higher Qg (12 nC), no Co(er) spec. Lacks Eoss-optimized structure; less efficient above 75 kHz; requires gate clamping for overvoltage protection. Choose only if Zener gate protection is mandatory and switching frequency remains ≤60 kHz.

Compared with IPU60R1K5CE, IPD60R1K5CEATMA1 offers superior thermal performance via DPAK tab mounting; versus STP6NK60ZFP, it delivers measurable efficiency gain in high-frequency PFC due to lower Eoss and tighter Qg distribution.

Availability

IPD60R1K5CEATMA1 is available at Aetrix Electronics and suitable for LED driver PFC stages, USB-C adapter primary switches, and industrial AC/DC modules requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for IPD60R1K5CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CE family-designed specifically for cost-sensitive, high-efficiency consumer and lighting power supplies where price-performance ratio and ease of drive are critical system-level requirements.

FAQ

Is IPD60R1K5CEATMA1 suitable for paralleling in high-current PFC designs?

Yes, but with specific layout precautions: gate traces must be identical length and impedance-matched; ferrite beads (≥100 Ω @ 100 MHz) are recommended on each gate line to suppress oscillation; and source inductance must be minimized using Kelvin-source routing to avoid current imbalance.

What is the maximum recommended gate resistor value for reliable switching?

For standard 10 V gate drive, RG ≤ 22 Ω ensures adequate turn-on speed while limiting peak gate current to <500 mA. With 12.2 Ω (as tested in datasheet), td(on) = 8 ns and tr = 7 ns are achieved-exceeding typical PFC controller slew rate requirements.

Does the body diode support zero-voltage switching (ZVS) in resonant topologies?

No-its trr = 230 ns and Qrr = 1.1 µC are too high for clean ZVS in LLC or phase-shifted full-bridge. It is rated for hard-switched and quasi-resonant operation only; for true ZVS, consider CoolMOS™ C7 or CE variants with <100 ns trr.

Can IPD60R1K5CEATMA1 replace older CoolMOS™ C3 parts in existing designs?

Yes, with verification: RDS(on) is 15% lower and Qg is 20% lower than C3 equivalents, so gate drive strength and snubber sizing may require adjustment; thermal derating curves differ slightly-confirm Tj margin using RthJC = 2.57 °C/W.

IPD60R1K5CEATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CE
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:
9.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
28W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD60R1K5CEATMA1 FAQ

1.How can I place an order for IPD60R1K5CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R1K5CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R1K5CEATMA1 reliable?

The price and inventory of IPD60R1K5CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R1K5CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R1K5CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R1K5CEATMA1 transactions.

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IPD60R1K5CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R1K5CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R1K5CEATMA1?

For technical support, including IPD60R1K5CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R1K5CEATMA1 requirements.

6.How does Aetrix verify that IPD60R1K5CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R1K5CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R1K5CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R1K5CEATMA1?

All IPD60R1K5CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R1K5CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R1K5CEATMA1 part is unused and in its original packaging.

Return procedure for IPD60R1K5CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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