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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R210CFD7ATMA1

Name: IPD60R210CFD7ATMA1
Brand: Infineon Technologies
SKU: IPD60R210CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R210CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R210CFD7ATMA1.pdf

Description:: MOSFET N CH

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Product details

Overview

IPD60R210CFD7ATMA1 from Infineon Technologies is a 600 V, 210 mΩ ultra-fast body diode superjunction MOSFET in DPAK (PG-TO252-3) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 42 A pulsed drain current, 23 nC gate charge, and 0.385–0.77 µC reverse recovery charge (Qrr), enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPD60R210CFD7ATMA1 datasheet, IPD60R210CFD7ATMA1 pinout, IPD60R210CFD7ATMA1 application, or IPD60R210CFD7ATMA1 equivalent, key selection criteria include its 1300 A/µs diF/dt ruggedness, 1.94 °C/W junction-to-case thermal resistance, best-in-class R_DS(on)×Q_g figure-of-merit, and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with integrated fast-recovery body diode, engineered specifically to reduce switching losses and improve hard commutation robustness in zero-voltage switching (ZVS) circuits. Its low Q_g (23 nC typ.) and ultra-low Q_rr (0.385–0.77 µC) minimize turn-off energy (E_oss = 2.6 µJ @ 400 V) and dv/dt stress during diode commutation.

The MOSFET supports 12 A continuous drain current at T_C = 100 °C and operates up to 150 °C junction temperature. Its 70 V/ns reverse diode dv/dt rating and 1300 A/µs diF/dt capability ensure stable operation under high-speed hard-switched transitions without external snubbing in properly designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage suitable for 400 V bus applications with margin for transients and ringing.
R_DS(on), max	210 mΩ @ T_j = 150 °C - Enables low conduction loss in high-current, high-temperature operation.
Q_g, typ	23 nC - Reduces gate drive power and enables faster switching with lower driver IC stress.
Q_rr	0.385–0.77 µC @ V_R = 400 V - Minimizes reverse recovery loss and EMI in resonant topologies.
diF/dt	1300 A/µs - Supports robust hard commutation without oscillation or shoot-through risk.
E_oss	2.6 µJ @ 400 V - Low stored output capacitance energy reduces turn-on loss in ZVS operation.
R_thJC	1.94 °C/W - Enables efficient heat transfer to heatsink in compact SMD power designs.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, with exposed drain tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires <20 V absolute max rating and low-inductance layout to suppress ringing.
Pin 2 / Tab (Drain)	High-side power terminal	Exposed copper tab serves as primary drain connection and thermal path; must be soldered to PCB copper pour.
Pin 3 (Source)	Reference and return path	Provides source reference for gate drive; forms common node with internal body diode cathode.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 92–138 ns and Qrr = 0.385–0.77 µC enable clean commutation in LLC/ZVS without external diodes.
Low R_DS(on) × Q_g FOM	Optimized tradeoff between conduction and switching loss for >96% efficiency in 1–3 kW resonant SMPS.
High diF/dt ruggedness	1300 A/µs rating allows reliable operation in high-dI/dt synchronous rectification and bidirectional DC/DC stages.
JEDEC industrial qualification	Qualified per JESD47 and AEC-Q101 stress tests - supports long-term reliability in uncontrolled ambient environments.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 1U 2 kW front-end AC/DC converter using phase-shift full-bridge topology with ZVS.

IC Role / Device Role / Timing Role: High-side primary switch handling 400 V DC bus and delivering 12 A RMS current.

Use Value: 23 nC Q_g and 2.6 µJ E_oss reduce switching loss by ≥18% vs. CFD2 generation, lowering heatsink mass by 35%.

Use Scenario: 48 V telecom rectifier with dual LLC resonant stages for high-efficiency 3 kW output.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET operating at 300–500 kHz with hard commutation.

Use Value: 1300 A/µs diF/dt and 70 V/ns reverse dv/dt prevent false turn-on and oscillation during fast current reversal.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional OBC PFC + DC/DC stage supporting 6.6 kW AC input and 400 V battery interface.

IC Role / Device Role / Timing Role: Primary-side switch in interleaved totem-pole PFC and resonant DC/DC transformer driver.

Use Value: 210 mΩ R_DS(on) at 150 °C maintains <1.2 W conduction loss at 10 A, enabling fanless cooling design.

Use Scenario: Three-phase 10 kVA online UPS inverter stage with active clamp and soft-switching control.

IC Role / Device Role / Timing Role: High-voltage leg switch managing 600 V DC link and 20 A peak line current.

Use Value: 49 mJ single-pulse avalanche energy (E_AS) provides margin against inductive switching overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R180CFD7	Lower R_DS(on) (180 mΩ), higher Q_g (27 nC), same package and CFD7 die.	Better conduction loss at cost of slightly higher switching loss; suited for lower-frequency (<150 kHz) high-current designs.	Select when thermal budget favors lower R_DS(on) and gate drive capability supports 27 nC load.
IPP60R190CFD7	TO-220 package, identical R_DS(on)/Q_g/Q_rr specs, no exposed drain tab.	Requires mechanical heatsink mounting; less suitable for ultra-thin SMD power modules but easier thermal validation.	Choose for prototyping, lower-volume production, or legacy board compatibility where DPAK footprint is unavailable.

Compared with IPD60R180CFD7 and IPP60R190CFD7, the IPD60R210CFD7ATMA1 offers optimal balance of gate drive simplicity (23 nC), thermal performance (1.94 °C/W), and SMD manufacturability - making it preferred for space-constrained, high-volume resonant power supplies.

Availability

IPD60R210CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and consistent parametric performance across production lots.

Supply support for IPD60R210CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the CoolMOS™ CFD7 product line - engineered specifically to advance efficiency and ruggedness in soft-switching power conversion, targeting next-generation data center, 5G infrastructure, and electric vehicle energy systems.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of 10.2 Ω is specified in the datasheet for timing characterization (td(on)/td(off)). For ZVS, use 5–15 Ω depending on driver strength and layout inductance; values >15 Ω increase turn-on delay and may compromise soft-switching window. Ferrite beads are recommended for paralleling configurations to suppress gate oscillation.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is rated for ±20 V static and ±30 V dynamic gate-source voltage. A negative turn-off voltage is not required, though −2 V to 0 V can improve noise immunity in high-dv/dt environments. Standard 0 V to 12 V gate drive suffices for most ZVS and LLC applications.

Can IPD60R210CFD7ATMA1 replace older CFD2-series MOSFETs without redesign?

Yes - it is a direct drop-in replacement for IPD60R210CFD2 in DPAK, sharing identical pinout, R_DS(on), and V_DS. However, its lower Q_rr and improved diF/dt require verification of gate drive loop stability and snubber sizing, especially in hard-commutated stages.

What PCB layout practices maximize thermal performance?

Maximize copper area (≥6 cm²) on the drain tab layer using 70 µm thick FR4; place thermal vias (≥8 × 0.3 mm) directly under the tab connecting to inner ground/power planes; keep gate and source traces short and symmetric; avoid routing high-dv/dt nodes near gate traces to prevent capacitive coupling.

IPD60R210CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 210mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1015 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 64W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IPD60R210CFD7ATMA1 FAQ

1.How can I place an order for IPD60R210CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R210CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R210CFD7ATMA1 reliable?

The price and inventory of IPD60R210CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R210CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R210CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R210CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R210CFD7ATMA1?

IPD60R210CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R210CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R210CFD7ATMA1?

For technical support, including IPD60R210CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R210CFD7ATMA1 requirements.

6.How does Aetrix verify that IPD60R210CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R210CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R210CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R210CFD7ATMA1?

All IPD60R210CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R210CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R210CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPD60R210CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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