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Infineon Technologies IPD60R280P7ATMA1

Part No.:
IPD60R280P7ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R280P7ATMA1.pdf
Description:
MOSFET N-CH 600V 12A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,956

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Product details

Overview

IPD60R280P7ATMA1 from Infineon Technologies is a 600 V, 280 mΩ superjunction N-channel power MOSFET in DPAK (PG-TO252-3) package, featuring integrated body diode and ESD protection. It delivers 12 A continuous drain current at TC = 25°C, 36 A pulsed current, and 2.1 µJ output switching energy at 400 V - optimized for PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPD60R280P7ATMA1 datasheet, IPD60R280P7ATMA1 pinout, IPD60R280P7ATMA1 application, or IPD60R280P7ATMA1 equivalent, key selection criteria include RDS(on) stability over temperature, diF/dt ruggedness of 900 A/µs, low 18 nC gate charge, and JEDEC-qualified industrial reliability up to 150°C junction temperature.

Technical Context

This CoolMOS™ P7 device implements a superjunction architecture with optimized charge balancing for simultaneous reduction of conduction and switching losses. Its 5.2 V gate plateau voltage and 7 Ω intrinsic gate resistance enable stable drive under hard-switching conditions without external damping.

The MOSFET integrates a fast-recovery body diode (trr = 158 ns, Qrr = 1.1 µC) and supports high dv/dt immunity (80 V/ns) in low-side configurations. Thermal resistance RthJC = 2.36 °C/W ensures efficient heat transfer to PCB copper when mounted in vertical orientation with 6 cm² drain pad.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., telecom rectifiers, server PSUs).
RDS(on),max 280 mΩ at Tj = 150°C - enables low conduction loss in continuous 12 A operation with minimal thermal derating.
Qg,typ 18 nC - reduces gate driver power demand and simplifies layout for 100–300 kHz PFC stages.
Eoss@400V 2.1 µJ - lowers turn-off loss and eases snubber design in hard-switched topologies.
diF/dt 900 A/µs - sustains robust body-diode commutation during zero-current switching in LLC half-bridge resonant converters.
RthJC 2.36 °C/W - allows direct thermal coupling to PCB copper, eliminating need for heatsink in <15 W dissipation designs.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, with exposed drain tab for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control terminal Receives 10 V logic-level drive; 7 Ω internal gate resistance limits ringing without external series resistor.
Pin 2 (Drain / Tab) High-voltage power terminal Internally connected to exposed copper tab; must be soldered to ≥6 cm² PCB copper area for thermal management.
Pin 3 (Source) Reference and return path Serves as local ground reference for gate drive; connects to source of synchronous rectifier or controller IC.

Key Features

Feature Design Value
Hard/soft switching compatibility Validated for PFC and LLC stages via 900 A/µs diF/dt rating and low ringing tendency - eliminates need for gate ferrite beads in most designs.
ESD robustness HBM >2 kV across all pins - enables reliable automated assembly without special ESD handling in industrial production lines.
Body diode ruggedness Single-pulse avalanche energy EAS = 38 mJ - withstands unclamped inductive switching events in flyback or forward converters.
Thermal performance RthJA = 35–45 °C/W on 40 mm × 40 mm FR4 PCB - supports compact, fanless designs in space-constrained adapters and lighting drivers.

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter in 1U 2 kW server PSU.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in half-bridge topology, operating at 200–300 kHz with ZVS.

Use Value: 280 mΩ RDS(on) and 2.1 µJ Eoss reduce total losses by ~12% vs. P6 generation, enabling 96% efficiency at full load.

Use Scenario: Boost PFC stage in -48 V telecom rectifier feeding distributed power architecture.

IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost converter, driven by UCC28070 controller.

Use Value: 18 nC Qg and low 761 pF Ciss allow clean 100 kHz switching with minimal gate drive loss and EMI filtering burden.

LCD TV Backlight Inverter Industrial UPS Charger

Use Scenario: Resonant half-bridge inverter driving CCFL or LED backlight arrays in 4K LCD TVs.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge, subjected to repetitive hard commutation.

Use Value: 900 A/µs diF/dt rating prevents body diode failure during zero-voltage turn-on transitions, extending field lifetime.

Use Scenario: Bidirectional AC/DC charger stage in 3 kVA industrial UPS with active PFC + DC-DC isolation.

IC Role / Device Role / Timing Role: Unidirectional switch in interleaved totem-pole PFC, operating at 65 kHz with 0.5 duty cycle.

Use Value: JEDEC industrial qualification (Tj = −55 to +150°C) ensures stable RDS(on) and avalanche margin across wide ambient temperature swings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPD60R380P7 RDS(on) = 380 mΩ (higher conduction loss), same 600 V rating and P7 platform features. Better suited for lower-current (<8 A) PFC stages where thermal budget allows higher RDS(on) for cost optimization. Select when system efficiency target permits 0.5–1.2 W higher conduction loss at 10 A and board space is constrained.
STP60N6F7 650 V rating, RDS(on) = 290 mΩ, but no integrated ESD diode and lower diF/dt (650 A/µs). Requires external ESD protection and gate damping in high-noise telecom environments; less robust in hard-commutated LLC. Choose only if legacy STMicro design reuse is required and thermal margin exceeds 15°C above max Tj.

Compared with IPD60R380P7 and STP60N6F7, the IPD60R280P7ATMA1 provides the lowest RDS(on) in the P7 family with guaranteed 900 A/µs diF/dt and >2 kV HBM - making it optimal for high-density, high-reliability PFC and resonant converters where thermal headroom and commutation stress are critical.

Availability

IPD60R280P7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPD60R280P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ P7 product line targets high-efficiency, high-power-density AC/DC conversion systems - specifically engineered to replace older superjunction MOSFET generations in PFC, LLC, and hard-switched SMPS topologies.

FAQ

What is the maximum continuous drain current for IPD60R280P7ATMA1 at 100°C case temperature?

The datasheet specifies 8 A continuous drain current (ID) at TC = 100°C, derived from thermal limits and RDS(on) derating. This value assumes proper PCB copper area (6 cm² drain pad) and natural convection cooling per JEDEC JESD51-2 standards.

Does IPD60R280P7ATMA1 require an external gate resistor for stable operation?

No external gate resistor is strictly required due to its 7 Ω intrinsic gate resistance and low ringing tendency. However, a 2.2–4.7 Ω series resistor is recommended in high-noise environments or when paralleling multiple devices to balance turn-on timing and suppress oscillation.

Can IPD60R280P7ATMA1 be used in totem-pole PFC configurations?

Yes - its 900 A/µs diF/dt rating, 80 V/ns dv/dt ruggedness, and robust body diode make it suitable for bidirectional totem-pole PFC. Gate drive must ensure precise dead-time control to avoid shoot-through, and layout must minimize source inductance.

What is the thermal resistance from junction to ambient on a standard 4-layer PCB?

On a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² single-layer (70 µm) copper for drain connection and vertical mounting, RthJA is 35–45 °C/W. Performance degrades to 62 °C/W on minimal footprint boards - thermal simulation is advised for >10 W dissipation.

IPD60R280P7ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
761 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
53W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD60R280P7ATMA1 FAQ

1.How can I place an order for IPD60R280P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R280P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R280P7ATMA1 reliable?

The price and inventory of IPD60R280P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R280P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R280P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R280P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R280P7ATMA1?

IPD60R280P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R280P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R280P7ATMA1?

For technical support, including IPD60R280P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R280P7ATMA1 requirements.

6.How does Aetrix verify that IPD60R280P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R280P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R280P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R280P7ATMA1?

All IPD60R280P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R280P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R280P7ATMA1 part is unused and in its original packaging.

Return procedure for IPD60R280P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPD60R280P7ATMA1 Tags

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