Infineon Technologies IPD60R380C6

Overview

IPD60R380C6 from Infineon Technologies is a 600 V, 11 A CoolMOS™ C6 superjunction MOSFET optimized for hard-switching and resonant topologies in industrial SMPS, server power supplies, and lighting ballasts. It features 380 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 24 nC), and low E_oss (150 nJ) enabling high-efficiency, high-frequency operation up to 100 kHz.

For engineers reviewing the IPD60R380C6 datasheet, IPD60R380C6 pinout, IPD60R380C6 application, or IPD60R380C6 equivalent, this device is selected for its balance of conduction loss, switching speed, and ruggedness in continuous conduction mode (CCM) PFC and LLC half-bridge stages where thermal management and layout compactness are critical.

Technical Context

This MOSFET employs Infineon's CoolMOS™ C6 technology based on charge compensation principle, delivering reduced specific on-resistance (R_{DS(on)}·A) and improved figure-of-merit (FOM) versus prior generations. Its optimized cell pitch and trench geometry yield lower Qg/Qgd ratio and reduced Miller plateau voltage.}

The device supports unclamped inductive switching (UIS) with E_AS = 190 mJ and exhibits robust avalanche capability without derating. Its gate threshold voltage (V_GS(th) = 3.0–4.5 V) and low C_iss/C_oss ratio support stable gate drive in high-noise environments typical of industrial DC-DC converters and LED drivers.

Key Specifications

Pinout & Package

IPD60R380C6 is housed in an industry-standard TO-252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.5 × 6.2 × 2.3 mm and supports reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STP60N6F6 and IXFH60N60X3, IPD60R380C6 delivers superior FOM (Q_g × R_DS(on) = 9.12 Ω·nC), tighter V_GS(th) distribution, and proven industrial reliability-making it optimal for high-density, high-reliability 600 V switching stages.

Availability

IPD60R380C6 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for IPD60R380C6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 product line targets high-efficiency, high-power-density SMPS designs where reduced switching loss and thermal robustness are mandatory-especially in datacenter, telecom, and industrial power conversion.

FAQ

What is the maximum recommended gate resistor value for IPD60R380C6 in a 100 kHz LLC resonant converter?

A gate resistor of 10 Ω is recommended to limit peak gate current to <2 A while maintaining <50 ns turn-on delay. Higher values (>22 Ω) increase switching losses and risk incomplete turn-on during high-frequency operation due to elevated Q_g sensitivity. Layout parasitics must be minimized to avoid oscillation at the Miller plateau region.

Can IPD60R380C6 replace IPD60R450C6 in an existing PFC design without layout changes?

Yes-both share identical TO-252 package, pinout, and thermal footprint. However, the 380 mΩ R_DS(on) lowers conduction loss by ~15 %, requiring verification of gate drive strength (Q_g is 24 nC vs. 20 nC) and thermal margin at full load. No PCB modification is needed if the original design used ≥15 °C safety margin on junction temperature.

Does IPD60R380C6 require a negative gate turn-off voltage in hard-switching applications?

No-its V_GS(th) minimum of 3.0 V and low Miller capacitance (C_gd = 12 pF) ensure noise immunity without negative bias. A 0 V to −5 V turn-off swing may improve dV/dt immunity in >1 kV/µs environments, but is not required for standard industrial 600 V bus applications per datasheet test conditions.

What is the safe operating area (SOA) limitation at T_c = 100 °C for repetitive pulse operation?

At T_c = 100 °C, the SOA limits repetitive drain current to 7.5 A for 100 µs pulses at V_DS = 400 V. This is governed by thermal runaway onset and is verified per Figure 12 in Rev. 2.4 datasheet. Pulse width must remain below 200 µs to avoid exceeding 150 °C junction temperature under worst-case case-to-junction delta.