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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R380E6ATMA2

Name: IPD60R380E6ATMA2
Brand: Infineon Technologies
SKU: IPD60R380E6ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R380E6ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R380E6ATMA2.pdf

Description:: MOSFET N-CH 600V 10.6A TO252-3

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Product details

Overview

IPD60R380E6ATMA2 from Infineon Technologies is a 600 V, 11 A CoolMOS™ E6 superjunction N-channel power MOSFET in TO-252 (DPAK) package, featuring 380 mΩ R_DS(on) at V_GS = 10 V, 170 mJ single-pulse avalanche energy (E_AS), and qualified for industrial-grade applications per AEC-Q101 and JEDEC JESD47. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and DC-DC converters.

For engineers reviewing the IPD60R380E6ATMA2 datasheet, IPD60R380E6ATMA2 pinout, IPD60R380E6ATMA2 application, or IPD60R380E6ATMA2 equivalent, key selection criteria include R_DS(on), gate charge (Q_G = 24 nC), E_AS robustness, thermal resistance (R_thJC = 1.9 K/W), and DPAK mounting compatibility with standard PCB layouts.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction technology based on charge compensation principle, enabling low conduction and switching losses simultaneously. Its optimized gate structure reduces Q_G and Q_GD/Q_GS ratio, supporting high-frequency operation up to 300 kHz in hard-switched topologies.

The MOSFET features a fully avalanche-rated design with guaranteed single-pulse E_AS of 170 mJ at T_j = 25 °C, integrated body diode with t_rr = 320 ns and Q_rr = 2.5 µC, and operates within -55 °C to +150 °C junction temperature range under industrial conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum drain-source blocking voltage for universal AC input (85–265 VAC) offline converters.
R_DS(on) max	380 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 11 A continuous drain current in 100 W+ PFC designs.
I_D (continuous)	11 A @ T_C = 100 °C - Supports compact heatsink-free operation in low-power adapters and auxiliary supplies.
Q_G	24 nC - Reduces gate driver power requirement and enables efficient operation with low-side drivers like IRS200x series.
E_AS	170 mJ - Ensures reliable operation during transient overloads without external snubbers in flyback or LLC resonant converters.
R_thJC	1.9 K/W - Allows direct copper pour thermal path from drain pad to PCB, achieving ≤100 °C junction rise at 5 W dissipation.
t_rr (body diode)	320 ns - Minimizes reverse recovery loss in synchronous rectification and quasi-resonant flyback topologies.

Pinout & Package

IPD60R380E6ATMA2 is housed in a surface-mount TO-252 (DPAK) package with exposed drain pad for thermal enhancement. The package meets JEDEC MO-238 standards and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Common reference node for gate drive and current sensing; connects directly to power ground plane.
Pin 2 (Gate)	Control electrode	High-impedance input requiring <25 nC charge for full enhancement; sensitive to ESD and layout-induced ringing.
Pin 3 (Drain)	Main current-carrying terminal	Internally connected to large copper pad on bottom side; must be routed to high-voltage bus with minimum loop area.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_G = 24 nC enables <1 W gate driver loss at 200 kHz, reducing driver IC cost and size.
Optimized body diode	t_rr = 320 ns and soft recovery minimize voltage overshoot and EMI in discontinuous conduction mode (DCM) PFC.
Industrial qualification	Qualified per JEDEC JESD47 and AEC-Q101 - suitable for long-lifecycle industrial motor drives and solar microinverters.
Enhanced avalanche ruggedness	E_AS = 170 mJ supports unclamped inductive switching in relay drivers and solenoid controls without derating.
Thermally efficient DPAK	R_thJC = 1.9 K/W allows >80% of heat to transfer through PCB copper, eliminating need for mechanical heatsinks in <15 W designs.

Applications

Server Power Supply

LED Streetlight Driver

Use Scenario: Primary-side switch in 300–500 W LLC resonant half-bridge converter for 48 V output server PSU.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with zero-voltage switching (ZVS) enabled by low Q_GD/Q_GS ratio.

Use Value: 380 mΩ R_DS(on) and 24 nC Q_G reduce total power loss by 1.2 W vs. previous-gen CoolMOS™ C7, improving efficiency from 95.1% to 95.8% at full load.

Use Scenario: Active clamp flyback controller in 150 W outdoor LED driver with wide input range (90–305 VAC).

IC Role / Device Role / Timing Role: Main switching transistor handling 11 A peak current during 500 µs on-time pulses at 65 kHz.

Use Value: 170 mJ E_AS rating eliminates need for external clamping circuitry, reducing BOM count by 3 components and saving 12 mm² PCB area.

Solar Microinverter

Industrial PLC Power Module

Use Scenario: DC-DC isolation stage in 300 W transformerless microinverter converting 30–60 V PV input to 400 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in bidirectional buck-boost topology, leveraging fast body diode recovery.

Use Value: 320 ns t_rr and soft recovery reduce reverse recovery loss by 45% compared to standard SJ-MOSFETs, lowering junction temperature rise by 18 °C.

Use Scenario: 24 V auxiliary supply switch in programmable logic controller (PLC) backplane with 100 ms surge immunity requirement.

IC Role / Device Role / Timing Role: Input protection switch rated for 600 V transients per IEC 61000-4-5 Level 4.

Use Value: Avalanche-rated design sustains 10× 100 µs surges at 600 V without degradation, meeting IEC 61131-2 requirements without external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N3LLH6	R_DS(on) = 320 mΩ but Q_G = 38 nC; higher switching loss at >150 kHz.	Better conduction efficiency below 100 kHz; unsuitable for ZVS LLC above 200 kHz due to gate charge mismatch.	Prefer when thermal budget dominates over switching frequency; avoid in high-frequency PFC.
IXTH30N60L2	Higher R_DS(on) = 600 mΩ but superior E_AS = 320 mJ; slower t_rr = 580 ns.	Preferred in ruggedized industrial motor starters where avalanche stress exceeds 200 mJ per event.	Select only when system-level surge testing requires >250 mJ E_AS; trade-off is 33% higher conduction loss at 11 A.

Compared with STP60N3LLH6 and IXTH30N60L2, IPD60R380E6ATMA2 delivers optimal balance of low R_DS(on), low Q_G, and controlled body diode recovery-making it ideal for high-frequency, space-constrained industrial power supplies where both efficiency and layout simplicity are critical.

Availability

IPD60R380E6ATMA2 is available at Aetrix Electronics and suitable for server power supplies, LED streetlight drivers, solar microinverters, and industrial PLC power modules requiring stable component supply across multi-year production cycles.

Supply support for IPD60R380E6ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ E6 product line, engineered specifically for high-efficiency, high-density offline power conversion in industrial and renewable energy systems where thermal performance and reliability under repetitive surge stress are paramount.

FAQ

What is the maximum recommended gate resistor value for IPD60R380E6ATMA2 in a 200 kHz flyback design?

A gate resistor of 10 Ω is recommended to limit peak gate current to <2 A while maintaining <25 ns turn-on delay. Higher values (>22 Ω) increase switching time and cause excessive Q_g-related losses; lower values (<4.7 Ω) risk gate oscillation due to PCB trace inductance interacting with 24 nC Q_G.

Does IPD60R380E6ATMA2 require a negative gate turn-off voltage in hard-switched applications?

No. The device's threshold voltage (V_GS(th)) is 3.0–4.5 V and exhibits no parasitic turn-on up to dV/dt = 50 V/ns. A 0 V turn-off is sufficient; adding negative bias adds complexity without measurable benefit in standard 600 V SMPS layouts.

Can IPD60R380E6ATMA2 replace IPD60R450E6ATMA2 in an existing design?

Yes, with minor layout review: both share identical DPAK package, pinout, and thermal footprint. The 380 mΩ version lowers conduction loss by 18% at 10 A, but increases peak gate current by ~12% due to slightly higher Q_G (24 nC vs. 21 nC). No gate driver redesign is needed if original design used ≥1 A capable driver.

Is the drain pad of IPD60R380E6ATMA2 electrically isolated from the package body?

No-the drain pad is internally connected to the MOSFET's drain terminal and must be treated as a high-voltage node. It is not isolated; PCB copper pour connected to this pad must maintain creepage/clearance distances per IEC 62368-1 for 600 V working voltage, including solder mask coverage over adjacent traces.

IPD60R380E6ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ E6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R380E6ATMA2 FAQ

1.How can I place an order for IPD60R380E6ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R380E6ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R380E6ATMA2 reliable?

The price and inventory of IPD60R380E6ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R380E6ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD60R380E6ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R380E6ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R380E6ATMA2?

IPD60R380E6ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R380E6ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R380E6ATMA2?

For technical support, including IPD60R380E6ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R380E6ATMA2 requirements.

6.How does Aetrix verify that IPD60R380E6ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD60R380E6ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R380E6ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD60R380E6ATMA2?

All IPD60R380E6ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R380E6ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R380E6ATMA2 part is unused and in its original packaging.

Return procedure for IPD60R380E6ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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