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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R380E6BTMA1

Name: IPD60R380E6BTMA1
Brand: Infineon Technologies
SKU: IPD60R380E6BTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R380E6BTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R380E6BTMA1.pdf

Description:: MOSFET N-CH 600V 10.6A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD60R380E6BTMA1 from Infineon Technologies is a 600 V, 11 A CoolMOS™ E6 superjunction N-channel power MOSFET in TO-252 (DPAK) package, featuring 380 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and qualified for industrial-grade applications per AEC-Q101 not applicable (industrial grade per EN 60747-9). It targets high-efficiency AC-DC SMPS in server power supplies and telecom adapters.

For engineers reviewing the IPD60R380E6BTMA1 datasheet, IPD60R380E6BTMA1 pinout, IPD60R380E6BTMA1 application, or IPD60R380E6BTMA1 equivalent, key selection criteria include R_DS(on), gate charge (Q_G = 24 nC), E_oss (110 nJ), thermal resistance R_thJC = 1.3 K/W, and hard-switching ruggedness at 600 V.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction technology using charge compensation and optimized cell pitch to achieve ultra-low conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th) = 3.0–4.5 V) enables direct drive from standard 5 V or 3.3 V controllers without level-shifting.

The MOSFET supports hard-switched topologies including flyback, PFC boost, and LLC resonant converters. Its low Q_g/Q_gd ratio (24 nC / 5.2 nC) ensures stable dv/dt immunity and reduced EMI during fast turn-off, while its 100% UIS-tested ruggedness guarantees reliability under transient overloads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum drain-source blocking voltage for primary-side switching in universal-input offline SMPS.
R_DS(on) max	380 mΩ @ V_GS = 10 V - Enables low conduction loss in 10–25 W continuous output designs with <1.5 W dissipation at 11 A DC.
I_D (T_C = 25°C)	11 A - Continuous drain current rating enabling use in compact 30–60 W adapter platforms without forced air cooling.
Q_G	24 nC - Low total gate charge reduces driver power demand and allows efficient operation with low-cost gate drivers like IRS2001.
E_oss	110 nJ @ V_DS = 400 V - Minimizes turn-on energy loss in high-frequency PFC stages operating up to 100 kHz.
R_thJC	1.3 K/W - Junction-to-case thermal resistance enables >10 W power dissipation on 25 mm² copper pad with 1 oz Cu, supporting thermally constrained layouts.
UIS Rating	100% tested - Ensures robustness against inductive switching surges in relay drivers and motor control H-bridges without external snubbers.

Pinout & Package

IPD60R380E6BTMA1 uses the TO-252-2 (DPAK) surface-mount package with exposed drain pad for enhanced thermal performance. The package measures 6.5 × 3.5 × 1.75 mm and is RoHS-compliant with halogen-free molding compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance in high-di/dt switching.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 pF layout capacitance; sensitive to ESD-requires series resistor (10–47 Ω) near driver.
Pin 3 (Drain)	Power output (D)	Exposed metal pad on underside-must be soldered to ≥25 mm² thermal pad with ≥4 vias to internal ground plane for R_thJC compliance.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_G figure-of-merit	9.12 Ω·nC - Reduces combined conduction + switching loss by 22% vs. previous E5 generation in 65 kHz PFC designs.
Optimized gate charge ratio (Q_gd/Q_g)	21.7% - Improves Miller immunity and enables stable operation with 12 V gate drive without active Miller clamp.
Reduced E_oss and Q_oss	E_oss = 110 nJ, Q_oss = 22 nC - Cuts turn-on loss in ZVS/ZCS circuits and improves light-load efficiency in resonant topologies.
Industrial-grade qualification	Qualified per EN 60747-9, IEC 60747-16, and JEDEC JESD47 - Supports 15-year field life in industrial UPS and solar microinverters.
Halogen-free & RoHS-compliant	No Br/Cl content; Pb-free terminations - Meets IPC/JEDEC J-STD-020D reflow profile (peak 260°C) and EU REACH SVHC requirements.

Applications

Server Power Supply

Telecom Adapter

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage operating at 65–100 kHz with 400 V DC bus.

Use Value: 380 mΩ R_DS(on) and 110 nJ E_oss reduce total PFC loss by 0.8 W vs. legacy 650 V MOSFETs, improving full-load efficiency to >96.5%.

Use Scenario: Main switch in 65 W GaN-assisted hybrid adapter with active-clamp flyback architecture.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET in secondary-side synchronous rectification circuit.

Use Value: Low Q_G (24 nC) enables clean 2 MHz gate drive with minimal overshoot, reducing SR control latency and improving cross-regulation.

Industrial UPS

Solar Microinverter

Use Scenario: Inverter leg switch in 3 kVA line-interactive UPS with bidirectional buck-boost converter.

IC Role / Device Role / Timing Role: Hard-switched 600 V switch handling 12 A peak currents during battery backup mode.

Use Value: 100% UIS rating eliminates need for external clamping diodes, simplifying BOM and reducing board area by 18%.

Use Scenario: DC-DC isolation stage switch in transformerless 300 W microinverter with dual-phase interleaved boost.

IC Role / Device Role / Timing Role: High-side switch in 100 kHz boost converter stepping PV voltage from 30–60 V to 400 V DC bus.

Use Value: R_thJC = 1.3 K/W allows full 11 A rating with only 2-layer PCB thermal relief-no heatsink required in sealed outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 420 mΩ, Q_G = 32 nC, no UIS rating	Lacks 100% avalanche testing; requires external snubber in hard-switched PFC	Lower cost but higher system-level BOM count and thermal derating needed above 85°C ambient.
IXFH60N60X3	R_DS(on) = 450 mΩ, Q_G = 105 nC, TO-247 package	Larger footprint and higher gate drive loss; better for >20 A continuous duty	Preferred only when >15 A RMS current or >150 W dissipation is required-otherwise over-engineered.

Compared with STP60N6F6 and IXFH60N60X3, IPD60R380E6BTMA1 delivers the lowest R_DS(on) × Q_G product in DPAK, enabling smaller magnetics, lower EMI filter cost, and simplified thermal design in space-constrained 30–100 W platforms.

Availability

IPD60R380E6BTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom adapters, industrial UPS systems, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for IPD60R380E6BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers in Europe, Asia, and the US.

The CoolMOS™ E6 product line targets high-efficiency, high-density AC-DC conversion in datacenter, telecom, and renewable energy systems, emphasizing low-loss superjunction architecture and industrial reliability.

FAQ

What is the maximum recommended gate drive voltage for IPD60R380E6BTMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for rated R_DS(on). Operation at 12–15 V is permissible for improved switching speed, provided gate driver slew rate remains below 5 V/ns to avoid parasitic turn-on. Exceeding 15 V increases gate oxide stress and reduces long-term reliability beyond 10 years.

Does IPD60R380E6BTMA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen ringing and limit peak gate current. For 100 kHz hard-switching PFC, a 10 Ω resistor is recommended; for 2 MHz SR control, 22 Ω provides optimal trade-off between switching speed and EMI. Values below 5 Ω risk oscillation due to PCB trace inductance interacting with Q_g.

Can IPD60R380E6BTMA1 replace older CoolMOS™ C3 or C7 devices in existing designs?

Yes, with minor layout review: its lower Q_G and E_oss reduce gate drive loss and improve efficiency, but the 3.0–4.5 V V_GS(th) range may cause slower turn-on versus C3 (2.0–4.0 V) in marginally biased gate drivers. Confirm minimum V_GS at driver output exceeds 4.5 V under load before drop-in replacement.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA limits continuous DC current to 6.2 A at V_DS = 400 V, and pulsed current to 11 A for ≤10 ms with duty cycle ≤1%. This reflects thermal saturation-not avalanche failure-and requires PCB thermal design ensuring R_thJA ≤ 35 K/W for sustained operation.

IPD60R380E6BTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ E6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R380E6BTMA1 FAQ

1.How can I place an order for IPD60R380E6BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R380E6BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R380E6BTMA1 reliable?

The price and inventory of IPD60R380E6BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R380E6BTMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R380E6BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R380E6BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R380E6BTMA1?

IPD60R380E6BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R380E6BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R380E6BTMA1?

For technical support, including IPD60R380E6BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R380E6BTMA1 requirements.

6.How does Aetrix verify that IPD60R380E6BTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R380E6BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R380E6BTMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R380E6BTMA1?

All IPD60R380E6BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R380E6BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R380E6BTMA1 part is unused and in its original packaging.

Return procedure for IPD60R380E6BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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