Infineon Technologies IPD60R380P6BTMA1

Overview

IPD60R380P6BTMA1 from Infineon Technologies is a 600 V, 380 mΩ DPAK-packaged CoolMOS™ P6 superjunction power MOSFET with 19 nC total gate charge and 29 A pulsed drain current. It integrates an internal body diode and delivers low conduction and switching losses for high-efficiency hard-switching and resonant topologies in AC-DC power supplies.

For engineers reviewing the IPD60R380P6BTMA1 datasheet, IPD60R380P6BTMA1 pinout, IPD60R380P6BTMA1 application, or IPD60R380P6BTMA1 equivalent, key selection criteria include R_DS(on) at 150°C, E_oss at 400 V, dv/dt ruggedness (100 V/ns), commutation di/dt capability (500 A/µs), and thermal resistance (R_thJC = 1.5 °C/W).

Technical Context

This MOSFET employs Infineon's superjunction architecture to achieve ultra-low figure-of-merit (R_DS(on) × Q_g = 7.22 Ω·nC) and energy-related output capacitance (C_o(er) = 33 pF). Its gate plateau voltage of 6.1 V enables robust drive margin under varying conditions.

The device features enhanced avalanche ruggedness (E_AS = 210 mJ), high diode commutation speed (dI_F/dt = 500 A/µs), and 100 V/ns MOSFET dv/dt rating-critical for reliable operation in PFC and LLC resonant converters without snubbers.

Key Specifications

Pinout & Package

IPD60R380P6BTMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package complies with JEDEC MS-012 and supports reflow soldering per MSL1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R380P6 and IPB60R380P6, IPD60R380P6BTMA1 offers optimal PCB area efficiency and thermal performance for space-constrained SMD power stages, while maintaining identical electrical behavior and ruggedness-making it ideal for high-density server and telecom power modules.

Availability

IPD60R380P6BTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV power boards, and industrial UPS inverters requiring stable component supply and long-term industrial qualification.

Supply support for IPD60R380P6BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The CoolMOS™ P6 product line targets high-efficiency AC-DC conversion in industrial, computing, and communications infrastructure-optimized for reduced system size, weight, and thermal design complexity.

FAQ

What is the maximum continuous drain current for IPD60R380P6BTMA1 at 100°C case temperature?

The maximum continuous drain current is 6.7 A at T_C = 100°C, as specified in Table 2 of the datasheet. This value is limited by junction temperature (T_j ≤ 150°C) and thermal resistance (R_thJC = 1.5 °C/W). Derating curves in Diagram 1 confirm linear reduction from 10.6 A at 25°C to 6.7 A at 100°C.

Does IPD60R380P6BTMA1 require a gate resistor for stable operation?

Yes-a gate resistor of 3.4 Ω is used in the datasheet's switching time test conditions (Table 7) to control rise/fall times and suppress oscillation. For production designs, values between 2.2 Ω and 10 Ω are typical, balancing switching loss, EMI, and gate driver stress. Ferrite beads are recommended only for paralleled configurations.

Can IPD60R380P6BTMA1 replace older CoolMOS™ P5 devices in existing designs?

Yes-pin-to-pin compatible with IPD60R380P5, offering identical R_DS(on) and improved E_oss (2.7 µJ vs. 3.4 µJ) and dv/dt ruggedness (100 V/ns vs. 75 V/ns). Layout changes are not required, but gate drive strength may be reduced due to lower Q_g (19 nC vs. 22 nC), improving efficiency by ~0.3% in 100 kHz PFC stages.

Is the body diode in IPD60R380P6BTMA1 optimized for synchronous rectification?

No-the body diode is optimized for PFC and hard-switched freewheeling, not synchronous rectification. Its reverse recovery charge (Q_rr = 2.1 µC) and time (t_rr = 232 ns) are suitable for CCM PFC but too slow for high-frequency SR in LLC secondaries. Dedicated SR controllers or GaN FETs are recommended for that role.