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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R385CPBTMA1

Name: IPD60R385CPBTMA1
Brand: Infineon Technologies
SKU: IPD60R385CPBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R385CPBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R385CPBTMA1.pdf

Description:: MOSFET N-CH 600V 9A TO252-3

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Product details

Overview

IPD60R385CPBTMA1 from Infineon Technologies is a 600 V, 11.5 A (T_C = 100 °C) superjunction MOSFET in TO-252-3 (DPAK) package, featuring 385 mΩ R_DS(on) max at V_GS = 10 V, optimized for hard-switching PFC and SMPS primary-side switching in industrial and server power supplies.

For engineers reviewing the IPD60R385CPBTMA1 datasheet, IPD60R385CPBTMA1 pinout, IPD60R385CPBTMA1 application, or IPD60R385CPBTMA1 equivalent, key selection criteria include R_DS(on), gate charge (Q_G = 34 nC), E_oss (19.5 nJ), thermal resistance (R_thJC = 1.4 K/W), and avalanche ruggedness (E_AS = 270 mJ).

Technical Context

This CoolMOS™ CP device employs charge compensation technology to achieve low conduction loss while maintaining fast switching with controlled dV/dt. Its gate threshold voltage (V_GS(th) = 3.0–4.5 V) and low gate charge support efficient operation in continuous conduction mode (CCM) PFC stages and resonant LLC half-bridge topologies.

The device integrates robust avalanche capability (single-pulse E_AS = 270 mJ) and is qualified per JEDEC JESD47, with halogen-free mold compound and MSL1 reflow rating. Its R_thJC of 1.4 K/W enables high-power density designs without forced airflow in 1U server PSUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for 400 V DC bus applications with 50 V margin.
R_DS(on) max	385 mΩ at V_GS = 10 V, T_J = 100 °C - determines conduction loss in high-current primary switches.
I_D (cont)	11.5 A at T_C = 100 °C - defines maximum continuous drain current under heatsink-limited thermal conditions.
Q_G	34 nC - total gate charge affecting drive strength requirement and switching loss trade-off.
E_oss	19.5 nJ at V_DS = 400 V - output capacitance energy impacting zero-voltage switching (ZVS) feasibility in LLC.
R_thJC	1.4 K/W - junction-to-case thermal resistance enabling >60 W dissipation with standard DPAK heatsinking.
E_AS	270 mJ (single pulse) - ensures reliable operation during transient overloads without external snubbers.

Pinout & Package

IPD60R385CPBTMA1 is housed in a surface-mount TO-252-3 (DPAK) package with exposed drain pad for enhanced thermal performance. The package meets JEDEC MS-012AA and supports MSL1 reflow.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Connected to PCB ground plane; requires low-inductance layout for EMI control.
Pin 2 (Gate)	Control input for MOSFET channel	High-impedance node requiring RC snubber and gate driver with ≥2 A peak sourcing/sinking.
Pin 3 (Drain)	Main high-voltage power terminal	Exposed copper pad on underside - must be soldered to large copper area for thermal and electrical conduction.

Key Features

Feature	Design Value
Low R_DS(on) × Q_G figure-of-merit	13.1 Ω·nC - reduces combined conduction and switching losses in 65–100 kHz CCM PFC stages.
Optimized gate charge profile	Q_gd/Q_g = 22 % - enables clean turn-off with minimal Miller-induced shoot-through risk in half-bridge configurations.
Hard-switching ruggedness	100 % rated avalanche energy tested - eliminates need for external clamping in offline SMPS primary side.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 - supports environmental compliance for industrial and datacenter equipment.
JEDEC-qualified reliability	Qualified per JESD47 - validated for 15-year field life in telecom rectifiers and server PSUs.

Applications

Server Power Supply

Industrial AC-DC Adapter

Use Scenario: Primary-side switch in 80+ Titanium 1.5 kW front-end PFC stage operating at 65 kHz CCM.

IC Role / Device Role: High-voltage, high-current switching element handling 12 A RMS input current.

Use Value: 385 mΩ R_DS(on) and 1.4 K/W R_thJC enable >98.5 % efficiency at full load without active cooling.

Use Scenario: Main switch in 500 W industrial AC-DC open-frame power supply with universal input (85–264 VAC).

IC Role / Device Role: Hard-switched flyback primary transistor with 600 V blocking requirement.

Use Value: 270 mJ E_AS withstands line surges up to 3 kV without derating or snubber redesign.

Telecom Rectifier

EV Charger Auxiliary PSU

Use Scenario: Switching element in 3 kW telecom rectifier secondary-side synchronous rectification control circuit.

IC Role / Device Role: Low-side gate driver FET for SiC MOSFET gate control with fast turn-on/turn-off.

Use Value: 34 nC Q_G allows clean 50 ns switching edges using TC4427 drivers, minimizing dead-time losses.

Use Scenario: Primary switch in 1 kW auxiliary power supply powering BMS and gate drivers in 800 V EV chargers.

IC Role / Device Role: Isolated flyback switch supporting 400 V DC input derived from main DC link.

Use Value: Halogen-free packaging and MSL1 rating ensure long-term reliability in high-humidity under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 450 mΩ, Q_G = 42 nC, no avalanche rating	Lacks E_AS spec - requires external clamping in surge-prone telecom rectifiers	Lower cost but higher system-level BOM count due to added TVS/snubber components
IXTH11N60L2	R_DS(on) = 420 mΩ, Q_G = 39 nC, R_thJC = 1.8 K/W	Higher thermal resistance limits power density in compact 1U server PSUs	Better SOA for linear-mode operation but less optimal for high-frequency PFC

Compared with STP60N6F6 and IXTH11N60L2, IPD60R385CPBTMA1 delivers superior thermal performance (1.4 K/W), guaranteed avalanche ruggedness, and lower gate charge - making it preferred for space-constrained, high-efficiency CCM PFC and server front-end designs where reliability and loss minimization are critical.

Availability

IPD60R385CPBTMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifiers requiring stable component supply and long lifecycle support.

Supply support for IPD60R385CPBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This device belongs to the CoolMOS™ CP family - engineered specifically for high-efficiency, high-reliability hard-switching power conversion in server, telecom, and industrial SMPS applications.

FAQ

Is IPD60R385CPBTMA1 suitable for ZVS-based LLC resonant converters?

Yes - its low E_oss (19.5 nJ at 400 V) and controlled Q_gd/Q_g ratio support reliable zero-voltage switching in 200–500 kHz LLC half-bridge topologies. However, gate drive must account for its 3.0–4.5 V V_GS(th) range to avoid partial turn-on during dead time.

What is the maximum recommended PCB copper area for the drain pad?

Infineon recommends ≥400 mm² of 2 oz (70 µm) copper connected directly to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, filled). This achieves the specified R_thJC = 1.4 K/W and prevents localized hot spots above 100 °C junction temperature.

Does this part require a negative gate voltage for reliable turn-off?

No - the device operates reliably with 0 V to 10 V gate drive. A negative turn-off voltage is not required, though –2 V may improve noise immunity in high-dV/dt environments. Gate driver selection must provide ≥2 A peak sink current to discharge Q_G = 34 nC within 20 ns.

How does its avalanche rating compare to standard silicon MOSFETs?

IPD60R385CPBTMA1 is fully rated for single-pulse avalanche energy (E_AS = 270 mJ), tested per JEDEC JESD24-1. Standard planar MOSFETs typically lack published E_AS specs and fail catastrophically under similar stress - making this part suitable for unclamped inductive switching in flyback and forward converters.

IPD60R385CPBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CP

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 385mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD60R385CPBTMA1 FAQ

1.How can I place an order for IPD60R385CPBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R385CPBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R385CPBTMA1 reliable?

The price and inventory of IPD60R385CPBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R385CPBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R385CPBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R385CPBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R385CPBTMA1?

IPD60R385CPBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R385CPBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R385CPBTMA1?

For technical support, including IPD60R385CPBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R385CPBTMA1 requirements.

6.How does Aetrix verify that IPD60R385CPBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R385CPBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R385CPBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R385CPBTMA1?

All IPD60R385CPBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R385CPBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R385CPBTMA1 part is unused and in its original packaging.

Return procedure for IPD60R385CPBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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