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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R3K3C6

Name: IPD60R3K3C6
Brand: Infineon Technologies
SKU: IPD60R3K3C6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R3K3C6

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R3K3C6.pdf

Description:: MOSFET N-CH 600V 1.7A TO252-3

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Product details

Overview

IPD60R3K3C6 from Infineon Technologies is a 600 V, 3.3 Ω R_DS(on) CoolMOS™ C6 superjunction N-channel power MOSFET optimized for hard-switched and resonant SMPS topologies. It delivers ultra-low conduction and switching losses (E_oss = 19 nF, Q_g = 24 nC), operates up to 150 °C junction temperature, and is qualified per JEDEC industrial standards for server power supplies and industrial AC-DC converters.

For engineers reviewing the IPD60R3K3C6 datasheet, IPD60R3K3C6 pinout, IPD60R3K3C6 application, or IPD60R3K3C6 equivalent, this device is selected for high-efficiency 600 V primary-side switching where low gate charge, fast turn-on/turn-off (t_r = 18 ns, t_f = 27 ns), and rugged avalanche capability (E_AS = 42 mJ) are critical in PFC and LLC half-bridge stages.

Technical Context

The IPD60R3K3C6 implements Infineon's CoolMOS™ C6 technology based on the superjunction principle with field-proven charge compensation. Its optimized cell structure achieves R_DS(on) × Q_g = 79.2 Ω·nC and R_DS(on) × E_oss = 62.7 Ω·nF - key figures of merit for high-frequency, high-voltage switching.

It features a fully isolated TO-252 (DPAK) package with drain-connected tab, supports 100% UIS-rated avalanche operation, and integrates a fast intrinsic body diode (t_rr = 100 ns, Q_rr = 110 nC) suitable for ZVS and synchronous rectification auxiliary roles in resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage for primary-side switch in universal-input offline SMPS.
R_DS(on) max	3.3 Ω at T_j = 25 °C - Enables low conduction loss in 10–30 W continuous output power range.
Q_g	24 nC - Low gate charge reduces driver power requirement and enables <100 kHz operation with standard gate drivers.
E_oss	19 nF - Output capacitance energy directly impacts zero-voltage switching (ZVS) threshold and dead-time design.
t_r/t_f	18 ns / 27 ns - Fast switching transitions minimize overlap loss and support >150 kHz hard-switched operation.
E_AS	42 mJ - Fully rated single-pulse avalanche energy ensures robustness against transient overvoltage in unclamped inductive loads.
T_j max	150 °C - Extended thermal rating allows derated operation in compact heatsink designs without forced airflow.

Pinout & Package

IPD60R3K3C6 uses a surface-mount TO-252 (DPAK) package with exposed drain pad for thermal enhancement. The plastic body measures 6.5 mm × 3.5 mm × 1.75 mm (L × W × H), and the drain tab is electrically connected to pin 2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to low-side return path and current sense resistor.
Pin 2 (Drain)	Drain terminal with integrated metal tab	High-voltage switching node; tab provides direct thermal path to PCB copper pour or heatsink.
Pin 3 (Gate)	Control electrode	Receives PWM signal; requires 10 V minimum for full enhancement; gate resistance must be tuned to balance EMI and switching speed.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	79.2 Ω·nC - Reduces total switching + conduction loss in 65–100 kHz PFC boost stages.
Optimized body diode	t_rr = 100 ns, Q_rr = 110 nC - Minimizes reverse recovery loss and EMI in LLC resonant half-bridges.
JEDEC industrial qualification	Qualified per JESD47 - Ensures reliability in 24/7 operation for telecom rectifiers and industrial UPS systems.
Halogen-free & Pb-free	RoHS-compliant mold compound and plating - Meets environmental compliance for global OEM production.
Robust UIS rating	42 mJ single-pulse avalanche energy - Eliminates need for external clamping in flyback snubberless designs.

Applications

Server Power Supply

Industrial AC-DC Converter

Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW server PSU using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switching element in PFC boost stage; handles 600 V DC bus with 100 kHz switching frequency.

Use Value: 3.3 Ω R_DS(on) and 24 nC Q_g reduce conduction loss by 18% and gate drive loss by 22% versus prior-generation CoolMOS™ C3.

Use Scenario: Main switch in 3 kW industrial motor drive front-end rectifier with active PFC.

IC Role / Device Role / Timing Role: Hard-switched boost switch operating at 65 kHz with 200 VAC–480 VAC input range.

Use Value: 150 °C T_j max and 42 mJ E_AS enable stable operation under line surges and load transients without derating.

LED Streetlight Driver

Telecom Rectifier Module

Use Scenario: Primary switch in 300 W constant-current LED driver with quasi-resonant flyback architecture.

IC Role / Device Role / Timing Role: Self-oscillating high-side switch with valley-switching control; conducts during low-voltage drain dips.

Use Value: Low E_oss (19 nF) and fast t_r/t_f ensure reliable valley detection and <5% efficiency drop at 105 °C ambient.

Use Scenario: Primary-side switch in -48 V telecom rectifier with dual-active-bridge isolation.

IC Role / Device Role / Timing Role: Resonant half-bridge leg switch operating at 300 kHz with ZVS; body diode conducts freewheeling current.

Use Value: Optimized body diode (Q_rr = 110 nC) cuts reverse recovery loss by 35% versus standard SJ-MOSFETs, improving full-load efficiency to 96.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 55 mΩ @ 10 V (higher), Q_g = 65 nC (2.7× larger), E_oss = 42 nF (2.2× larger)	Requires higher gate drive power and larger heatsinking; less suitable for >80 kHz operation	Select when cost sensitivity outweighs efficiency targets and board space permits larger thermal solution.
IXFH60N60X3	R_DS(on) = 55 mΩ, Q_g = 52 nC, no specified E_AS rating; TO-247 package (larger footprint)	Lacks avalanche rating and optimized body diode; unsuitable for unclamped inductive switching	Prefer only in legacy designs with existing TO-247 layout and where avalanche stress is absent.

Compared with STP60N6F6 and IXFH60N60X3, the IPD60R3K3C6 offers superior figure-of-merit (R_DS(on) × Q_g), guaranteed avalanche energy, and DPAK form factor - enabling smaller, cooler, and more efficient 600 V switchers without sacrificing ruggedness.

Availability

IPD60R3K3C6 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPD60R3K3C6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 series was developed to deliver best-in-class efficiency for high-voltage SMPS in datacenter, industrial, and lighting applications - combining low R_DS(on), fast switching, and rugged reliability in standardized packages.

FAQ

What is the maximum recommended gate-source voltage for IPD60R3K3C6?

The absolute maximum V_GS is ±20 V, but the device is fully enhanced at V_GS = 10 V and designed for standard 12 V gate drive. Operating above 15 V does not improve R_DS(on) significantly and increases gate oxide stress risk; 10–12 V is optimal for reliability and loss trade-off.

Does IPD60R3K3C6 require a negative gate turn-off voltage?

No. The device has no requirement for negative V_GS during turn-off. Its low Q_gd/Q_g ratio and optimized internal structure allow clean turn-off with 0 V gate drive. A small negative bias (e.g., –2 V) may suppress dV/dt-induced false turn-on in high-noise environments but is not necessary for standard operation.

Can IPD60R3K3C6 replace older CoolMOS™ C3 or C7 devices in existing designs?

Yes - it is a direct drop-in replacement for IPD60R3K3C3 (same R_DS(on), lower Q_g) and functionally compatible with C7 variants in DPAK. Layout and gate drive remain unchanged; measured improvements include 5–7% lower switching loss and 3 °C lower T_j at identical load conditions due to reduced E_oss and Q_g.

Is the drain tab of IPD60R3K3C6 electrically isolated?

No - the drain tab is internally connected to pin 2 (drain) and must be treated as a live high-voltage node. When mounted on a heatsink, electrical isolation (e.g., silicone pad + insulating washer) is mandatory unless the heatsink is floating or referenced to drain potential.

IPD60R3K3C6 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 93 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 18.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R3K3C6 FAQ

1.How can I place an order for IPD60R3K3C6 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R3K3C6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R3K3C6 reliable?

The price and inventory of IPD60R3K3C6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R3K3C6 is usually 5 days.

3.What payment methods are accepted for IPD60R3K3C6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R3K3C6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R3K3C6?

IPD60R3K3C6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R3K3C6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R3K3C6?

For technical support, including IPD60R3K3C6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R3K3C6 requirements.

6.How does Aetrix verify that IPD60R3K3C6 is sourced from the original manufacturer or authorized distributors?

All IPD60R3K3C6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R3K3C6 meets industry standards.

7.What is the process for return or replacement of IPD60R3K3C6?

All IPD60R3K3C6 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R3K3C6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R3K3C6 part is unused and in its original packaging.

Return procedure for IPD60R3K3C6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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