Infineon Technologies IPD60R450E6ATMA1

Overview

IPD60R450E6ATMA1 from Infineon is a 600 V, 13 A, 450 mΩ TRENCHSTOP™ 6 discrete MOSFET in PG-TO252-3 (DPAK) package, optimized for high-efficiency SMPS, PFC, and DC-DC converters operating up to 100 kHz with low conduction and switching losses.

For engineers reviewing the IPD60R450E6ATMA1 datasheet, IPD60R450E6ATMA1 pinout, IPD60R450E6ATMA1 application, or IPD60R450E6ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V, gate charge (Q_G = 17 nC), E_oss (19 nJ), thermal resistance (R_th(j–c) = 3.5 K/W), and avalanche ruggedness (E_AS = 85 mJ).

Technical Context

This MOSFET employs Infineon's TRENCHSTOP™ 6 silicon technology, delivering a positive temperature coefficient for R_DS(on) and stable current sharing in parallel configurations. Its optimized charge profile enables fast, low-loss switching with reduced gate drive requirements.

The device integrates a robust body diode with soft reverse recovery (t_rr = 49 ns, Q_rr = 45 nC at I_F = 13 A), supporting hard-switched and quasi-resonant topologies without external snubbers in many designs.

Key Specifications

Pinout & Package

IPD60R450E6ATMA1 is housed in a surface-mount PG-TO252-3 (DPAK) package with exposed drain pad for enhanced thermal performance. The package supports standard reflow profiles and offers mechanical compatibility with legacy TO-252 footprints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP60N6F6 and IXTP50N10P, IPD60R450E6ATMA1 delivers superior high-frequency efficiency due to its lower R_DS(on) × Q_G product and optimized E_oss, making it the preferred choice for space-constrained, high-efficiency 600 V applications above 80 kHz.

Availability

IPD60R450E6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, LED driver secondary stages, and telecom DC-DC bricks requiring stable component supply across multi-year production cycles.

Supply support for IPD60R450E6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the TRENCHSTOP™ 6 family-designed specifically for high-efficiency, high-reliability 600 V power conversion in server, telecom, and industrial SMPS where thermal performance and switching consistency are critical.

FAQ

What is the maximum continuous drain current (I_D) at T_C = 100°C?

The maximum continuous drain current is 8.5 A at case temperature of 100°C, derived from the derating curve in the datasheet (I_D = 13 A at 25°C, linearly decreasing to 0 A at 175°C junction temperature with R_th(j–c) = 3.5 K/W). This value assumes adequate PCB copper area and no additional thermal interface resistance.

Does IPD60R450E6ATMA1 support gate driving directly from a 3.3 V microcontroller?

Yes-the gate threshold voltage (V_GS(th)) ranges from 2.5 V to 3.5 V, and the device achieves full enhancement (R_DS(on) ≤ 450 mΩ) at V_GS ≥ 10 V. While 3.3 V can initiate turn-on, a dedicated gate driver (e.g., 1EDN7512B) is required to deliver sufficient peak current for fast, low-loss switching and to avoid partial turn-on during noise events.

Is the body diode suitable for freewheeling in a synchronous buck converter?

Yes-the integrated body diode has soft reverse recovery (t_rr = 49 ns, Q_rr = 45 nC) and is rated for continuous forward current up to 13 A. It is qualified for freewheeling in hard-switched buck converters up to 500 kHz, provided layout minimizes parasitic inductance and gate drive timing avoids shoot-through.

What is the recommended PCB footprint and thermal pad layout?

The official PG-TO252-3 footprint requires a 10.0 mm × 8.5 mm exposed drain pad with ≥4 thermal vias (0.3 mm diameter, spaced ≤1.2 mm apart) connecting to ≥2 cm² internal ground or power plane. Minimum solder mask opening is 9.5 mm × 8.0 mm; stencil aperture should be 1:1 with 120 µm thickness for optimal void control per Infineon Application Note AN2019-07.