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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R460CEATMA1

Name: IPD60R460CEATMA1
Brand: Infineon Technologies
SKU: IPD60R460CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R460CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R460CEATMA1.pdf

Description:: MOSFET N-CH 600V 9.1A TO252-3

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Product details

Overview

IPD60R460CEATMA1 from Infineon Technologies is a 600 V, 460 mΩ CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO252 (DPAK) package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 13.1 A continuous drain current at T_C = 25°C, 28 nC total gate charge, and 2.5 µJ output energy at 400 V - enabling compact, cost-sensitive lighting and adapter designs with high commutation ruggedness.

For engineers reviewing the IPD60R460CEATMA1 datasheet, IPD60R460CEATMA1 pinout, IPD60R460CEATMA1 application, or IPD60R460CEATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven switching loss trade-offs, gate drive simplicity (V_GS(th) = 2.5–3.5 V), and thermal resistance (R_thJC = 1.22 °C/W) in DPAK layout constraints.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure to achieve ultra-low figure-of-merit (R_DS(on) × Q_g = 12.9 Ω·nC typ.) while maintaining robust dv/dt immunity (50 V/ns) and high diode commutation speed (500 A/µs). Its 600 V V_(BR)DSS rating and 150 °C maximum junction temperature support operation in universal-input offline converters.

The MOSFET features a fast intrinsic body diode (t_rr = 320 ns, Q_rr = 3.1 µC at 400 V) and low gate plateau voltage (5.4 V), reducing Miller-induced switching oscillations. Gate resistance is specified at 8.5 Ω (1 MHz), supporting stable drive with standard gate drivers without external damping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus with 25% margin for surge and ringing in PFC and flyback topologies.
R_DS(on) max @ 150°C	0.46 Ω - ensures stable conduction loss across full industrial temperature range without derating collapse.
Q_g typ	28 nC - enables efficient 100–300 kHz switching with moderate gate driver current (≤2 A peak).
E_oss @ 400 V	2.5 µJ - directly reduces turn-on loss in hard-switched applications; lower than prior CE generations.
t_r/t_f	9 ns / 10 ns - fast edge rates minimize overlap loss but require careful PCB layout to suppress EMI.
R_thJC	1.22 °C/W - allows 102 W power dissipation at T_C = 25°C on minimal PCB copper, simplifying thermal design.
I_D,pulse	26 A - supports short-term overload conditions in adapter burst-mode or PFC overcurrent events.

Pinout & Package

IPD60R460CEATMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.7 mm × 6.2 mm × 2.4 mm and is RoHS-compliant with halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-threshold (2.5–3.5 V) NMOS gate requiring <20 V absolute max; connects to PWM controller output via series resistor.
Pin 2 (Drain)	High-voltage power terminal	Internally connected to exposed copper pad; must be routed to high-voltage node (e.g., PFC output or flyback primary) with thermal relief.
Pin 3 (Source)	Power return and reference	Common source node for gate drive return and current sensing; requires low-inductance connection to ground plane.

Key Features

Feature	Design Value
Ultra-low FOM (R_DS(on) × Q_g)	12.9 Ω·nC typ. - reduces combined conduction and switching losses better than standard SJ-MOSFETs at 65–150 kHz.
High commutation ruggedness	500 A/µs di/dt capability - sustains reliable operation during hard commutation in LLC and asymmetric half-bridge PFC.
Easy gate drive	V_GS(th) = 2.5–3.5 V and low C_iss = 620 pF - compatible with standard 12 V gate drivers without level-shifting or complex bias networks.
Pb-free & halogen-free	Meets JEDEC J-STD-020 MSL3 reflow profile - supports lead-free assembly with 260 °C peak soldering temperature.
High dv/dt immunity	50 V/ns rated - prevents false turn-on in high-noise environments like multi-phase PFC or motor drives.

Applications

LED Driver Power Stage

PC Silverbox PFC

Use Scenario: Constant-current LED driver operating from 85–265 V AC input with active PFC and quasi-resonant flyback.

IC Role / Device Role / Timing Role: Primary-side switch in boost PFC pre-regulator stage, switching at 65 kHz with critical conduction mode.

Use Value: 460 mΩ R_DS(on) and 2.5 µJ E_oss reduce total losses by >15% vs. legacy 600 V MOSFETs, enabling higher power density in enclosed luminaires.

Use Scenario: 300–500 W ATX PC power supply with continuous conduction mode (CCM) boost PFC front-end.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved or single-phase boost converter handling 10–13 A RMS input current.

Use Value: 13.1 A I_D rating and 1.22 °C/W R_thJC allow direct mounting on small heatsinks, eliminating need for forced air cooling in mid-tier silverboxes.

LCD TV Backlight Inverter

Universal AC-DC Adapter

Use Scenario: High-voltage DC-AC inverter powering CCFL or edge-lit LED backlights in 32–55 inch LCD TVs.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in resonant LLC topology operating at 200–500 kHz with ZVS.

Use Value: Low Q_gd/Q_g ratio (14.5/28 nC) improves ZVS margin and reduces dead-time sensitivity, enhancing light-output stability.

Use Scenario: 65 W universal-input (90–264 V AC) adapter for laptops and monitors using QR flyback architecture.

IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM) flyback, switching up to 130 kHz.

Use Value: 320 ns reverse recovery time and 21 A I_RRM enable clean turn-off with minimal voltage overshoot, reducing snubber losses and EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 0.42 Ω @ 25°C, Q_g = 32 nC, R_thJC = 1.4 °C/W - higher gate charge increases driver loss; slightly lower R_DS(on).	Same DPAK footprint but higher E_oss (3.1 µJ) - less suitable for high-frequency QR flyback above 100 kHz.	Prefer when lowest conduction loss dominates and switching frequency ≤65 kHz.
IPP60R460C6	R_DS(on) = 0.46 Ω @ 150°C, Q_g = 25 nC, R_thJC = 1.25 °C/W - lower Q_g improves high-frequency efficiency but reduced avalanche energy (E_AS = 150 mJ vs. 185 mJ).	Identical CoolMOS™ CE platform but newer revision - tighter V_GS(th) distribution (2.7–3.3 V) improves parallel operation.	Prefer for new designs targeting improved gate drive efficiency and tighter production tolerance.

Compared with STP60N6F6 and IPP60R460C6, IPD60R460CEATMA1 offers the best balance of low E_oss, proven avalanche ruggedness (185 mJ), and mature thermal performance in DPAK - making it optimal for cost-constrained, high-volume lighting and adapter platforms where reliability under transient stress is critical.

Availability

IPD60R460CEATMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC circuits, and universal AC-DC adapters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across manufacturing lots.

Supply support for IPD60R460CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication infrastructure.

This part belongs to the CoolMOS™ CE family - a cost-optimized superjunction MOSFET platform engineered specifically for high-efficiency, high-volume consumer power supplies and lighting systems operating at 65–300 kHz.

FAQ

Is IPD60R460CEATMA1 suitable for paralleling in high-current PFC designs?

Yes, but with specific layout precautions: use individual gate resistors (≥10 Ω) per device, add ferrite beads on each gate line, and ensure symmetrical PCB trace lengths and thermal coupling. The datasheet confirms high commutation ruggedness (500 A/µs) and matching V_GS(th) distribution supports stable current sharing under dynamic load steps.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum gate-source voltage is ±20 V static and ±30 V dynamic (AC). For robust long-term reliability, operate within 12–15 V gate drive amplitude. Exceeding 15 V increases gate oxide stress without meaningful R_DS(on) improvement and risks accelerated wear-out under repeated switching.

Does this MOSFET require a negative gate turn-off voltage to prevent spurious turn-on?

No. Its 50 V/ns dv/dt rating and 2.5–3.5 V threshold voltage provide sufficient noise immunity in typical PFC and flyback layouts. Negative turn-off is unnecessary unless operating in extreme EMI environments (e.g., adjacent to IGBTs in motor drives) - confirmed by Infineon's application note AN2015-04.

Can IPD60R460CEATMA1 replace IPA60R460CE in existing TO-220FP designs?

No - IPA60R460CE uses PG-TO220FP (FullPAK) with different thermal resistance (R_thJC = 4.1 °C/W) and pinout (Drain = Tab, Gate = Pin 1, Source = Pin 3). IPD60R460CEATMA1 is PG-TO252 (DPAK) with Drain = Pin 2/Tab, Gate = Pin 1, Source = Pin 3 - not pin-compatible and requires PCB redesign and thermal revalidation.

IPD60R460CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 460mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 280µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R460CEATMA1 FAQ

1.How can I place an order for IPD60R460CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R460CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R460CEATMA1 reliable?

The price and inventory of IPD60R460CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R460CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R460CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R460CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R460CEATMA1?

IPD60R460CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R460CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R460CEATMA1?

For technical support, including IPD60R460CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R460CEATMA1 requirements.

6.How does Aetrix verify that IPD60R460CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R460CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R460CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R460CEATMA1?

All IPD60R460CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R460CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R460CEATMA1 part is unused and in its original packaging.

Return procedure for IPD60R460CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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