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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R460CEAUMA1

Name: IPD60R460CEAUMA1
Brand: Infineon Technologies
SKU: IPD60R460CEAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R460CEAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R460CEAUMA1.pdf

Description:: CONSUMER

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Product details

Overview

IPD60R460CEAUMA1 from Infineon Technologies is a 600 V, 460 mΩ CoolMOS™ CE superjunction power MOSFET in PG-TO252 (DPAK) package, rated for 13.1 A continuous drain current at T_C = 25°C and optimized for high-efficiency PFC and hard-switching SMPS stages in consumer lighting and adapter applications.

For engineers reviewing the IPD60R460CEAUMA1 datasheet, IPD60R460CEAUMA1 pinout, IPD60R460CEAUMA1 application, or IPD60R460CEAUMA1 equivalent, key selection criteria include R_DS(on) at 150°C, E_oss @ 400 V, gate charge Q_g, commutation ruggedness, and thermal resistance R_thJC of 1.22 °C/W.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss (2.5 µJ @ 400 V), directly supporting high-frequency operation in critical conduction mode (CRM) PFC and fixed-frequency PWM converters.

It features a gate threshold voltage V_GS(th) of 2.5–3.5 V, 5.4 V gate plateau voltage, and robust dv/dt immunity (50 V/ns), with integrated fast-recovery body diode (t_rr = 320 ns, Q_rr = 3.1 µC) suitable for discontinuous and quasi-resonant topologies without external diode replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage for universal-input offline SMPS designs up to 400 V DC bus.
R_DS(on), max	460 mΩ @ T_j = 25°C - Enables low conduction loss in 13.1 A continuous drain applications with minimal heatsinking.
Q_g, typ	28 nC - Low gate drive energy requirement supports efficient 100–300 kHz switching with standard gate drivers.
E_oss @ 400 V	2.5 µJ - Reduces turn-off loss and improves light-load efficiency in hard-switched PFC and LLC resonant converters.
R_thJC	1.22 °C/W - Enables high power density with direct PCB copper cooling on 40 mm × 40 mm FR4 board (70 µm Cu).
t_rr	320 ns - Fast body diode recovery minimizes reverse recovery losses and EMI in bridge-leg configurations.
I_D,pulse	26 A - Supports peak current handling during startup, overload, and transient events without derating.

Pinout & Package

IPD60R460CEAUMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain tab for thermal enhancement. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V static/≤30 V dynamic voltage; RG = 8.5 Ω typical.
Pin 2 (Drain / Tab)	High-voltage power output	Electrically connected to exposed copper pad; primary thermal path to PCB; must be isolated from other layers.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Ultra-low FOM (R_DS(on) × Q_g)	Enables >95% efficiency in 65–100 kHz CRM PFC stages while reducing gate driver stress.
High commutation ruggedness	Rated for 185 mJ single-pulse avalanche energy and 50 V/ns dv/dt, ensuring reliability under hard-switching transients.
Easy gate drive	Low V_GS(th) (2.5–3.5 V) and stable plateau voltage (5.4 V) simplify control with standard 12 V gate drivers.
Pb-free & halogen-free	Complies with RoHS and JEDEC MSL3 reflow standards; wave and reflow solderable at 260 °C (10 s).

Applications

LED Driver Power Stage

PC Silverbox PFC Circuit

Use Scenario: Constant-current LED driver operating from 85–265 V AC input with active PFC front-end.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage, switching at 65–100 kHz in critical conduction mode.

Use Value: Low E_oss and fast t_rr reduce switching loss and audible noise while maintaining >96% PFC efficiency.

Use Scenario: 300–500 W ATX PC power supply with two-stage conversion (PFC + LLC).

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) boost PFC controller.

Use Value: 460 mΩ R_DS(on) and 1.22 °C/W R_thJC allow compact heatsinkless design at full load.

LCD TV Backlight Inverter

USB-C PD Adapter Output Stage

Use Scenario: 100–200 W LCD TV power board with integrated PFC and half-bridge LLC.

IC Role / Device Role / Timing Role: Upper switch in interleaved PFC or primary switch in LLC half-bridge.

Use Value: 26 A pulse rating and 500 A/µs diode dif/dt support high peak currents during burst-mode dimming.

Use Scenario: 65 W GaN-assisted USB-C PD adapter with hybrid PFC + QR flyback architecture.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver interface MOSFET or auxiliary PFC switch.

Use Value: Low Q_g (28 nC) enables precise timing control with minimal gate drive power overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R550CE	R_DS(on) = 550 mΩ, Q_g = 23 nC, E_oss = 2.1 µJ - higher conduction loss but lower switching loss.	Better suited for <100 kHz fixed-frequency PWM where conduction dominates over switching loss.	Select when optimizing for cost-sensitive 65–85 W adapters with moderate thermal constraints.
IPP60R460CFD7	Includes fast-body-diode (t_rr = 120 ns), R_DS(on) = 460 mΩ, Q_g = 31 nC - improved diode performance at slight Q_g penalty.	Preferred in ZVS/ZCS resonant converters requiring ultra-fast diode recovery and zero-voltage switching.	Choose for LLC or phase-shifted full-bridge where diode reverse recovery dictates EMI and efficiency.

Compared with IPD60R550CE and IPP60R460CFD7, IPD60R460CEAUMA1 delivers the best balance of conduction loss, switching loss, and ruggedness for cost-constrained 100–200 W PFC stages-offering lowest R_DS(on) among CE-series DPAK devices without sacrificing ease of drive or thermal performance.

Availability

IPD60R460CEAUMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC circuits, and LCD TV backlight inverters requiring stable component supply and long-term industrial availability.

Supply support for IPD60R460CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CE superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency offline power supplies in consumer lighting and adapter markets-emphasizing FOM optimization and system-level ease of use.

FAQ

What is the maximum junction temperature rating for IPD60R460CEAUMA1?

The absolute maximum operating junction temperature is 150°C, with continuous operation permitted across –40°C to +150°C ambient range when thermal design respects R_thJC = 1.22 °C/W and PCB copper area per datasheet layout guidelines. Derating begins above T_C = 100°C, where I_D drops to 8.3 A.

Can IPD60R460CEAUMA1 be used in parallel configurations?

Yes, but Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to ensure balanced dynamic current sharing. Layout symmetry, matched gate loop inductance, and identical source inductance are mandatory; paralleling increases total Q_g and demands proportional gate drive capability.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode is optimized for PFC and hard-switching freewheeling, not synchronous rectification. Its t_rr = 320 ns and Q_rr = 3.1 µC are too high for efficient SR operation; dedicated SR controllers with external low-Q_rr MOSFETs are required in secondary-side synchronous rectification topologies.

What is the gate-source leakage current specification?

IGSS is specified at ≤100 nA when V_GS = 20 V and V_DS = 0 V, measured at T_j = 25°C. This low leakage ensures stable gate bias under high-impedance drive conditions and contributes to reliable start-up behavior in self-biased gate drive circuits.

IPD60R460CEAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13.1A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 460mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 280µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 74W

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-344

IPD60R460CEAUMA1 FAQ

1.How can I place an order for IPD60R460CEAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R460CEAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R460CEAUMA1 reliable?

The price and inventory of IPD60R460CEAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R460CEAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R460CEAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R460CEAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R460CEAUMA1?

IPD60R460CEAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R460CEAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R460CEAUMA1?

For technical support, including IPD60R460CEAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R460CEAUMA1 requirements.

6.How does Aetrix verify that IPD60R460CEAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R460CEAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R460CEAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R460CEAUMA1?

All IPD60R460CEAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R460CEAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R460CEAUMA1 part is unused and in its original packaging.

Return procedure for IPD60R460CEAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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